P Channel FET YANGJIE YJG80GP06B with High Stability and Uniformity Featuring UL 94 V0 Flammability Certification
Key Attributes
Model Number:
YJG80GP06B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
6.5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.7V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF@30V
Number:
1 P-Channel
Output Capacitance(Coss):
900pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
5.45nF@30V
Gate Charge(Qg):
82nC
Mfr. Part #:
YJG80GP06B
Package:
PDFN-8L(5.9x5.2)
Product Description
Product Overview
The YJG80GP06B is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM with excellent stability and uniformity. It is designed for power management and portable equipment applications, featuring 100% EAS and VDS tested, Moisture Sensitivity Level 1, and UL 94 V-0 flammability rating.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-source Voltage | VDS | -60 | V | ||||
| Gate-source Voltage | VGS | ±18 | V | ||||
| Drain Current | ID | TA=25 | -12 | A | |||
| Drain Current | ID | TA=100 | -7.5 | A | |||
| Drain Current | ID | TC=25 | -80 | A | |||
| Drain Current | ID | TC =100 | -50 | A | |||
| Pulsed Drain Current | IDM | -320 | A | ||||
| Avalanche energy | EAS | TJ=25, VDD=-60V, VG=-10V, RG=25, L=2mH, IAS=-20A. | 400 | mJ | |||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | |||
| Total Power Dissipation | PD | TA=100 | 1 | W | |||
| Total Power Dissipation | PD | TC=25 | 120 | W | |||
| Total Power Dissipation | PD | TC =100 | 48 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ||||
| Thermal resistance | |||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | ||
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 0.8 | 1.04 | /W | ||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -60 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | µA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V, Tj=150 | -100 | µA | |||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=±18V | ±100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -2 | -2.7 | -4 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-20A | 6.5 | 8.5 | mΩ | ||
| Diode Forward Voltage | VSD | IS=-20A, VGS=0V | -0.9 | -1.3 | V | ||
| Gate resistance | RG | f=1MHz | 10 | Ω | |||
| Maximum Body-Diode Continuous Current | IS | -80 | A | ||||
| Dynamic Parameters | |||||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 5450 | pF | |||
| Output Capacitance | Coss | VDS=-30V, VGS=0V, f=1MHz | 900 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=-30V, VGS=0V, f=1MHz | 65 | pF | |||
| Switching Parameters | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-30V, ID=-20A | 82 | nC | |||
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-30V, ID=-20A | 25 | nC | |||
| Gate-Drain Charge | Qg d | VGS=-10V, VDS=-30V, ID=-20A | 17 | nC | |||
| Reverse Recovery Charge | Qrr | IF=-20A, di/dt=500A/us | 45 | nC | |||
| Reverse Recovery Time | trr | IF=-20A, di/dt=500A/us | 150 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-30V, RGEN=1.6 ID=-20A | 15 | ns | |||
| Turn-on Rise Time | tr | VGS=-10V, VDD=-30V, RGEN=1.6 ID=-20A | 50 | ns | |||
| Turn-off Delay Time | tD(off) | VGS=-10V, VDD=-30V, RGEN=1.6 ID=-20A | 135 | ns | |||
| Turn-off fall Time | tf | VGS=-10V, VDD=-30V, RGEN=1.6 ID=-20A | 160 | ns | |||
2408011042_YANGJIE-YJG80GP06B_C5371152.pdf
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