High Speed Switching P Channel MOSFET YANGJIE YJS4435B with Low RDS ON and RoHS Compliant Design
Key Attributes
Model Number:
YJS4435B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
19mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.22nF
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
YJS4435B
Package:
SOP-8
Product Description
Product Overview
The YJS4435B is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for low RDS(ON) and high-speed switching. Designed for applications such as battery protection, load switches, and power management, it offers a VDS of -30V and a continuous drain current (ID) of -10A. This device is 100% EAS tested and meets UL 94 V-0 flammability rating.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJS4435B
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 3
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | -30 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | -10 | A | ||
| Drain Current | ID | TA=100 | -6.3 | A | ||
| Pulsed Drain Current | IDM | -80 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=-30V, VG=-10V, RG=25, L=0.5mH, IAS=-15A | 56 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | ||
| Total Power Dissipation | PD | TA=100 | 1 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, Tj=150 | -100 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250μA | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-10A | 14 | 19 | mΩ | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-5A | 20 | 28 | mΩ | |
| Diode Forward Voltage | VSD | IS=-10A, VGS=0V | -0.9 | -1.2 | V | |
| Gate resistance | RG | f=1MHz | 16 | Ω | ||
| Maximum Body-Diode Continuous Current | IS | -10 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1220 | pF | ||
| Output Capacitance | Coss | 170 | pF | |||
| Reverse Transfer Capacitance | Crss | 160 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-10A | 24 | nC | ||
| Gate-Source Charge | Qgs | 2 | nC | |||
| Gate-Drain Charge | Qg d | 6 | nC | |||
| Reverse Recovery Charge | Qrr | IF=-10A, di/dt=100A/us | 11 | nC | ||
| Reverse Recovery Time | trr | 35 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-15V, ID=-10A RGEN=2.5 | 11 | ns | ||
| Turn-on Rise Time | tr | 4 | ns | |||
| Turn-off Delay Time | tD(off) | 70 | ns | |||
| Turn-off fall Time | tf | 50 | ns | |||
2410121513_YANGJIE-YJS4435B_C20605952.pdf
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