Power Management N Channel Enhancement Mode Transistor YANGJIE YJG60G15HJ for Industrial Electronics
Key Attributes
Model Number:
YJG60G15HJ
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
60A
RDS(on):
19mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF@75V
Number:
1 N-channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
2.1nF@75V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
YJG60G15HJ
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG60G15HJ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features an advanced trench cell design for high density and low RDS(ON), excellent heat dissipation, and a moisture sensitivity level 1 rating. It is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: UL 94 V-0 Flammability Rating, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 150 | V | |||
| Gate-source Voltage | VGS | ±25 | V | |||
| Drain Current | ID | TC=25 | 60 | A | ||
| Drain Current | ID | TC =100 | 38 | A | ||
| Pulsed Drain Current | IDM | 120 | A | |||
| Total Power Dissipation | PD | TC=25 | 125 | W | ||
| Total Power Dissipation | PD | TC =100 | 50 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 150 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=150V, VGS=0V | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=150V, VGS=0V, Tj=150 | - | - | 100 | µA |
| Gate-Body Leakage Current | IGSS | VGS= ±25V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 2 | - | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 13 | 19 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=6V, ID=10A | - | 15 | 22 | mΩ |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | - | - | 1.3 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 60 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=75V, VGS=0V, f=1MHz | - | 2100 | - | pF |
| Output Capacitance | Coss | - | 160 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=75V, ID=20A | - | 25 | - | nC |
| Gate-Source Charge | Qgs | - | 10 | - | nC | |
| Gate-Drain Charge | Qg | - | 8 | - | nC | |
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | - | 220 | - | nC |
| Reverse Recovery Time | trr | - | 86 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=75V, ID=20A RGEN=4.5Ω | - | 15 | - | ns |
| Turn-on Rise Time | tr | - | 34 | - | ||
| Turn-off Delay Time | tD(off) | - | 30 | - | ||
| Turn-off fall Time | tf | - | 26 | - | ||
2410121518_YANGJIE-YJG60G15HJ_C20605801.pdf
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