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quality High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses factory
quality High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses factory

High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses

Key Attributes
Model Number: MG150HF12MIC2
Product Custom Attributes
Td(off):
226ns
Pd - Power Dissipation:
1kW
Td(on):
116ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.42nF
Input Capacitance(Cies):
10nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@4mA
Gate Charge(Qg):
275nC@15V
Reverse Recovery Time(trr):
180ns
Switching Energy(Eoff):
8.6mJ
Turn-On Energy (Eon):
7mJ
Mfr. Part #:
MG150HF12MIC2
Package:
Screw Terminals
Product Description

Product Overview

The MG150HF12MIC2 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. This module offers fast switching and a short tail current, complemented by free-wheeling diodes with fast and soft reverse recovery. Ideal for welding machines, power supplies, and other industrial power applications.

Product Attributes

  • Brand: Yangjie
  • Model: MG150HF12MIC2
  • Certifications: RoHS Compliant
  • Document Revision: Rev.1.0
  • Date: 1-July-19

Technical Specifications

DescriptionSymbolValuesUnitsConditions
Absolute Maximum Ratings(TC = 25 unless otherwise specified)
Collector - Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES20V
DC Collector CurrentIC210ATC=25
DC Collector CurrentIC150ATC=80
Repetitive Peak Collector CurrentICM300ATC=25C, tp=1ms
Power Dissipation Per IGBTPtot1000W
Junction Temperature RangeTJ-40 to +150C
Storage Temperature RangeTSTG-40 to +125C
Insulation Test VoltageViso3000VAC, t=1min
Mounting Torque Power Terminals515%N*mScrew: M6
Mounting Torque Mounting Screw515%N*mM6
Electrical Characteristics of IGBT(TJ = 25 unless otherwise specified)
Collector-Emitter Breakdown VoltageV(BR)CES1200VVGE = 0V, IC=1mA
Collector Leakage CurrentICES0.5mAVCE=1200V,VGE=0V, TJ=25C
Collector Leakage CurrentICES1mAVCE=1200V, VGE=0V, TJ=125C
Gate Leakage CurrentIGES-200 to 200nAVCE=0V, VGE=20V
Gate - Emitter Threshold VoltageVGE(th)5.0 - 6.5VVCE=VGE, IC=4mA
Collector Emitter Saturation VoltageVCE(sat)1.9 - 2.1VIC=150A, VGE=15V, TJ=25C
Collector Emitter Saturation VoltageVCE(sat)2.0 - 2.3VIC=150A VGE=15V, TJ=125C
Input CapacitanceCies10nFVCE=25V, VGE=0V, f =1MHz
Reverse Transfer CapacitanceCres0.42nF
Turn-on Delay Timetd(on)116nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Rise Timetr31nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Turn-off Delay Timetd(off)226nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Fall TimeTf185nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Turn-on Delay Timetd(on)127nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Rise Timetr35nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Turn-off Delay Timetd(off)305nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Fall TimeTf300nsVCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Turn-on Switching LossEon7.0mJVCC=600V, RG =3.5 IC=150A TJ=25C
Turn-on Switching LossEon9.9mJVCC=600V, RG =3.5 IC=150A TJ=125C
Turn-off Switching LossEoff8.6mJVCC=600V, RG =3.5 IC=150A TJ=25C
Turn-off Switching LossEoff14.6mJVCC=600V, RG =3.5 IC=150A TJ=125C
Gate ChargeQge275nCVCC=600V,IC=150A, VGE=15V
Short Circuit Safe Operating AreaSCSOA735AVCC = 600V, VGE = 15V, TJ = 125, 10 s
Electrical Characteristics of FWD(TC = 25 unless otherwise specified)
Forward VoltageVFM1.72 - 1.9VIF=150A, VGE=0V; TJ=25C
Forward VoltageVFM1.82 - 2.0VTJ=125C
Reverse Recovery Timetrr180nsIF=150A , VR=600V, diF/dt=-2960A/s VGE = -15V TJ=25C
Reverse Recovery Timetrr359nsIF=150A , VR=600V, diF/dt=-2960A/s VGE = -15V TJ=125C
Peak Reverse Recovery CurrentIrr110ATJ=25C
Peak Reverse Recovery CurrentIrr120ATJ=125C
Reverse Recovery ChargeQrr8.3mJTJ=25C
Reverse Recovery ChargeQrr15.9mJTJ=125C
Thermal Resistance Characteristics
Junction-To-Case (IGBT Part, Per Leg)RJC0.1/W
Junction-To-Case (Diode Part, Per Leg)RJC0.27/W
Case-To-Sink (Conductive Grease Applied)RCS0.1/W
Power Terminals TorqueMt3 - 5NmScrew:M6
Mounting Screw TorqueMs3 - 5NmM6
Weight Of ModuleWeight300g

2410121308_YANGJIE-MG150HF12MIC2_C781186.pdf

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