Single IGBTs
High voltage IGBT transistor ZHHXDZ HX40N120-TO247 1200V module for welding and converter applications
Product OverviewThe HX40N120 is a 1200V high-speed switching series third-generation IGBT from Zhuhai Haixin Electronics Co., Ltd. It features low EMI, a very soft, fast recovery anti-parallel diode, and a maximum junction temperature of 175C. This product is qualified according to JEDEC for target ...
Power electronics IGBT module YANGJIE MG75P12E2 featuring Trench technology and fast recovery diode
Product OverviewThe MG75P12E2 S-M332 is a high-performance IGBT module designed for power electronics applications. It features low Vce(sat) with Trench technology, a positive temperature coefficient for Vce(sat), and an integrated fast & soft recovery anti-parallel diode. The module boasts a low ...
IGBT module YANGJIE MG25P12E1 with maximum junction temperature 175 and 166W power dissipation rating
Product OverviewThe MG25P12E1 S-M345 is a RoHS compliant IGBT module designed for motor drivers, AC and DC servo drive amplifiers, and UPS applications. It features low switching losses, low VCE(sat) with a positive temperature coefficient, an integrated fast & soft recovery anti-parallel FWD, a low ...
IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive and UPS applications
Product OverviewThe DGW40N120CTLQ is a high-performance IGBT designed for automotive and industrial applications. It features low collector-emitter saturation voltage, a maximum junction temperature of 175, and is qualified to AEC-Q101. This device includes a fast and soft recovery anti-parallel FWD...
High power IGBT module YANGJIE MG200HF12TLC2 with trench technology and high short circuit capability
Product OverviewThe MG200HF12TLC2 S-M400 is a high-performance IGBT module designed for demanding industrial applications. It features low VCE(sat) with Trench technology, positive temperature coefficient for VCE(sat), and high short circuit capability. Integrated with an ultra-fast and soft ...
Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon N Channel IGBT device
Product OverviewThe GT50JR22 is a Silicon N-Channel IGBT designed for dedicated current-resonant inverter switching applications. It features 6.5th generation technology, high-speed switching capabilities with a typical fall time of 0.05 s, and a low saturation voltage of 1.55 V (typ.). The device ...
High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses
Product OverviewThe MG150HF12MIC2 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. This module offers fast ...
Durable YANGJIE MG300HF12LEC2 IGBT module with high short circuit capability and low switching losses
MG300HF12LEC2 S-M292 IGBT ModuleThe MG300HF12LEC2 S-M292 is a high-speed IGBT module featuring NPT technology, designed for high-frequency applications. It offers low switching losses, high short circuit capability (10s), and includes an ultra-fast & soft recovery anti-parallel FWD. Its low ...
Durable YANGJIE MG100P12E2 IGBT Module for Motor Drivers UPS and Industrial Inverter Systems
Product OverviewThe MG100P12E2 S-M333 is an IGBT module designed for inverter applications, offering high performance and reliability. It features low Vce(sat) with a positive temperature coefficient, an integrated fast & soft recovery anti-parallel FWD, a low inductance case, and high short circuit ...
Power semiconductor YANGJIE DGW30N65CTL ideal for motion control systems and AC DC servo drive amplifier
Product OverviewThe DGW30N65CTL S-M451D is a high-performance IGBT with low switching losses, maximum junction temperature of 175, positive temperature coefficient, high ruggedness, and excellent short circuit capability (10s). It is designed for applications such as inverters for motor drives, AC...
600V High Speed Switching IGBT VBsemi Elec VBP16I40 with Low Turn Off Losses and Ultra Low Gate Charge
Product Overview The VBP16I40 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum ...
Power Electronics Module YANGJIE MG15P12P2 Suitable for Servo Drive Amplifiers Motor Drivers and UPS
Product OverviewThe MG15P12P2 S-M315 is a high-performance IGBT module designed for various power electronics applications. It offers low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast & soft recovery anti-parallel FWD. The module features a low ...
High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel diode and low switching losses
Product Overview The MG200HF12LEC2 is a high-speed IGBT module designed for demanding applications. It features NPT technology for low switching losses and high short circuit capability. This module includes an ultra-fast, soft-recovery anti-parallel FWD and boasts low inductance. It is suitable for ...
IGBT module YANGJIE DGW40N120CTH1A with 1200V collector emitter voltage and fast recovery diode included
Product OverviewThe DGW40N120CTH1A is a high-performance IGBT with a breakdown voltage of 1200V, designed for high frequency switching applications. It features a maximum junction temperature of 175 and a positive temperature coefficient. This IGBT includes a fast and soft recovery anti-parallel ...
switching IGBT transistor YANGJIE DGW20N65CTL0 designed for in soft switching and air conditioning units
Product OverviewThe DGW20N65CTL0 is a high-speed, smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Toshiba GT20N135SRA S1E Discrete N Channel IGBT with TO 247 Package and Integrated Freewheeling Diode
Product OverviewThe GT20N135SRA is a discrete Silicon N-Channel IGBT from Toshiba, designed for high-speed switching applications. It features a 6.5th generation IGBT with an integrated freewheeling diode (FWD), offering low saturation voltage and high junction temperature capabilities. This product ...
IGBT module YANGJIE MG300HF12TFC2 for motion control high frequency switching and welding applications
Product OverviewThe MG300HF12TFC2 S-M441 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature ...
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
Product OverviewThe GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed ...
Current resonant inverter switching IGBT TOSHIBA GT50JR22S1WLDE S with integrated Freewheeling Diode
Product OverviewThe GT50JR22 is a discrete Silicon N-Channel IGBT designed for current-resonant inverter switching applications. It features a 6.5th generation IGBT with an integrated Freewheeling Diode (FWD), offering high-speed switching capabilities and low saturation voltage. The device is rated ...
1200V 10A Trench Field Stop IGBT SPTECH SPT10N120T1 with low saturation voltage and high ruggedness
Product OverviewThe SPT10N120T1 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and robust performance. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand ...
