Single IGBTs
600V High Speed Switching IGBT VBsemi Elec VBP16I40 with Low Turn Off Losses and Ultra Low Gate Charge
Product Overview The VBP16I40 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for telecommunications, lighting, consumer electronics, industrial equipment, and renewable
Power Electronics Module YANGJIE MG15P12P2 Suitable for Servo Drive Amplifiers Motor Drivers and UPS
Product OverviewThe MG15P12P2 S-M315 is a high-performance IGBT module designed for various power electronics applications. It offers low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast & soft recovery anti-parallel FWD. The module features a low inductance case, high short circuit capability (10s), and an isolated heatsink using DBC technology, with a maximum junction temperature of 175. It is suitable for motor drivers, AC/DC
High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel diode and low switching losses
Product Overview The MG200HF12LEC2 is a high-speed IGBT module designed for demanding applications. It features NPT technology for low switching losses and high short circuit capability. This module includes an ultra-fast, soft-recovery anti-parallel FWD and boasts low inductance. It is suitable for high-frequency drivers, solar inverters, UPS systems, and electric welding machines. Product Attributes Brand: Yangjie Model: MG200HF12LEC2 S-M291 Compliance: RoHS Revision: 1.2
IGBT module YANGJIE DGW40N120CTH1A with 1200V collector emitter voltage and fast recovery diode included
Product OverviewThe DGW40N120CTH1A is a high-performance IGBT with a breakdown voltage of 1200V, designed for high frequency switching applications. It features a maximum junction temperature of 175 and a positive temperature coefficient. This IGBT includes a fast and soft recovery anti-parallel diode, making it suitable for resonant converters, uninterruptible power supplies, and welding converters.Product AttributesBrand: 21yangjieCertifications: RoHS CompliantTechnical
switching IGBT transistor YANGJIE DGW20N65CTL0 designed for in soft switching and air conditioning units
Product OverviewThe DGW20N65CTL0 is a high-speed, smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for use in soft switching applications, air conditioning systems, and motor drive inverters.Product AttributesBrand: 21yangjieCertifications: RoHSTechnical SpecificationsParameterSymbo
Toshiba GT20N135SRA S1E Discrete N Channel IGBT with TO 247 Package and Integrated Freewheeling Diode
Product OverviewThe GT20N135SRA is a discrete Silicon N-Channel IGBT from Toshiba, designed for high-speed switching applications. It features a 6.5th generation IGBT with an integrated freewheeling diode (FWD), offering low saturation voltage and high junction temperature capabilities. This product is dedicated to voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.Product AttributesBrand: ToshibaModel: GT20N135SRAType:
IGBT module YANGJIE MG300HF12TFC2 for motion control high frequency switching and welding applications
Product OverviewThe MG300HF12TFC2 S-M441 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10s), an integrated ultra-fast & soft recovery anti-parallel FWD, and a low inductance package. The module boasts a maximum
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
Product OverviewThe GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed switching with a typical IGBT fall time of 0.25 s and a low saturation voltage of 1.65 V (typ.). The device supports a high junction temperature of 175 C (max) and is sensitive to
Current resonant inverter switching IGBT TOSHIBA GT50JR22S1WLDE S with integrated Freewheeling Diode
Product OverviewThe GT50JR22 is a discrete Silicon N-Channel IGBT designed for current-resonant inverter switching applications. It features a 6.5th generation IGBT with an integrated Freewheeling Diode (FWD), offering high-speed switching capabilities and low saturation voltage. The device is rated for a maximum junction temperature of 175C.Product AttributesBrand: ToshibaStart of Commercial Production: 2012-03Certifications: RoHS CompatibleTechnical SpecificationsCharacteri
1200V 10A Trench Field Stop IGBT SPTECH SPT10N120T1 with low saturation voltage and high ruggedness
Product OverviewThe SPT10N120T1 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and robust performance. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). The device also offers enhanced avalanche capability.Product
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Product OverviewThe GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.Product AttributesBrand: ToshibaProduct Type: Discrete
power transistor YANGJIE DGW75N65CTS2A IGBT suitable for resonant and welding converter applications
Product OverviewThe DGW75N65CTS2A is a high-speed IGBT designed for hard and soft switching applications. It features a maximum junction temperature of 175C, a positive temperature coefficient, and high ruggedness for stable temperature performance. This device is ideal for resonant converters, uninterruptible power supplies, welding converters, and mid to high range switching frequency converters.Product AttributesBrand: YangjieModel: DGW75N65CTS2A S-M384DCertifications:
600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies
Product Overview The VBP16I80 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications power supplies, lighting ballasts, consumer and computing power supplies, industrial applications like welding and battery chargers, renewable energy inverters, and
IGBT module YANGJIE MG150HF12LEC2 featuring low switching losses and high short circuit capability for industrial
Product OverviewThe MG150HF12LEC2 S-M338 is a high-speed IGBT module featuring NPT technology, designed for applications requiring high frequency drivers, solar inverters, UPS, and electric welding machines. It offers low switching losses, high short circuit capability, and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts low inductance and a maximum junction temperature of 150.Product AttributesBrand: YangjieCertifications: RoHS CompliantOrigin:
IGBT module YANGJIE MG200HF12TFC2 featuring low switching losses and high short circuit capability
Product OverviewThe MG200HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and high short-circuit capability. The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.Product
power switching device VBsemi Elec VBP165I60 650V IGBT with low VCEsat and ultra low gate charge
Product Overview The VBP165I60 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). It is widely used in telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast),
1200V 40A IGBT SPT40N120F1A Featuring Low Saturation Voltage and Fast Switching for Power Electronics
Product OverviewThe SPT40N120F1A is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.Product AttributesBrand: SupericModel: SPT40N120F1ADate: 2018.06 / Rev3.3Website: http://www.superic-tech
650V 50A Trench Field Stop IGBT SPTECH SPT50N65F1A1 for motion control solar and welding applications
Product OverviewThe SPT50N65F1A1 is a 650V / 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It offers low switching losses and is ideal for motion control, solar applications, and welding machines. Key features include high breakdown voltage, Trench-Stop technology for high-speed switching and stable ruggedness, low VCEsat, and easy parallel switching capability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor:
Trench Field Stop IGBT SPTECH SPT25N120F1A1 1200V 25A with Low VCEsat and High Avalanche Capability
SPT25N120F1A1 - 1200V / 25A Trench Field Stop IGBTThe SPT25N120F1A1 is a 1200V / 25A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, enhanced ruggedness with temperature stability, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. The device also boasts improved avalanche capability.Product AttributesBrand: Superic (implied from URL)Model
High speed switching TOSHIBA GT30J122A STA1 E D Silicon N Channel IGBT for inverter and PFC circuits
Product OverviewThe GT30J122A is a Silicon N-Channel IGBT from Toshiba, designed for current-resonant inverter switching and partial-switching power factor correction (PFC) applications. It features high-speed switching with a typical fall time of 0.20 s and a low saturation voltage of 1.7 V (typ.) at 50 A collector current. This 4th generation enhancement-mode IGBT is packaged in a TO-3P(N) format.Product AttributesBrand: ToshibaCommercial Production Start: 2010-06Certificat
