Single IGBTs
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Product OverviewThe GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction ...
power transistor YANGJIE DGW75N65CTS2A IGBT suitable for resonant and welding converter applications
Product OverviewThe DGW75N65CTS2A is a high-speed IGBT designed for hard and soft switching applications. It features a maximum junction temperature of 175C, a positive temperature coefficient, and high ruggedness for stable temperature performance. This device is ideal for resonant converters, ...
600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies
Product Overview The VBP16I80 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including ...
IGBT module YANGJIE MG150HF12LEC2 featuring low switching losses and high short circuit capability for industrial
Product OverviewThe MG150HF12LEC2 S-M338 is a high-speed IGBT module featuring NPT technology, designed for applications requiring high frequency drivers, solar inverters, UPS, and electric welding machines. It offers low switching losses, high short circuit capability, and includes an ultra-fast & ...
IGBT module YANGJIE MG200HF12TFC2 featuring low switching losses and high short circuit capability
Product OverviewThe MG200HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and ...
power switching device VBsemi Elec VBP165I60 650V IGBT with low VCEsat and ultra low gate charge
Product Overview The VBP165I60 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum ...
1200V 40A IGBT SPT40N120F1A Featuring Low Saturation Voltage and Fast Switching for Power Electronics
Product OverviewThe SPT40N120F1A is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching ...
650V 50A Trench Field Stop IGBT SPTECH SPT50N65F1A1 for motion control solar and welding applications
Product OverviewThe SPT50N65F1A1 is a 650V / 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It offers low switching losses and is ideal for motion control, solar applications, and welding machines. Key features include high breakdown voltage, Trench-Stop technology for high...
Trench Field Stop IGBT SPTECH SPT25N120F1A1 1200V 25A with Low VCEsat and High Avalanche Capability
SPT25N120F1A1 - 1200V / 25A Trench Field Stop IGBTThe SPT25N120F1A1 is a 1200V / 25A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, enhanced ruggedness with temperature stability, low VCEsat, and easy parallel ...
High speed switching TOSHIBA GT30J122A STA1 E D Silicon N Channel IGBT for inverter and PFC circuits
Product OverviewThe GT30J122A is a Silicon N-Channel IGBT from Toshiba, designed for current-resonant inverter switching and partial-switching power factor correction (PFC) applications. It features high-speed switching with a typical fall time of 0.20 s and a low saturation voltage of 1.7 V (typ.) ...
High Speed Switching Silicon N Channel IGBT TOSHIBA GT60M324Q with 175C Maximum Junction Temperature
Product OverviewThe TOSHIBA GT60M324 is a Sixth Generation Insulated Gate Bipolar Transistor (IGBT) made of Silicon N Channel. It is designed for consumer applications and voltage resonance inverter switching applications. Key advantages include a built-in Fast Recovery Diode (FRD), high-speed ...
Trench field stop IGBT SPTECH SPT25N120T1 1200V 25A designed for operation in industrial motor drives
SPT25N120T1 Trench Field Stop IGBTThe SPT25N120T1 is a 1200V, 25A Trench Field Stop IGBT designed for enhanced reliability and performance. It features high ruggedness, stable temperature behavior, a short circuit withstand time of 10s, and low VCE(SAT). Its positive temperature coefficient in VCE...
1200V 20A Trench Field Stop IGBT SPTECH SPT20N120F1 with low VCE SAT and enhanced avalanche capability
Product OverviewThe SPT20N120F1 is a 1200V / 20A Trench Field Stop IGBT featuring high breakdown voltage for improved reliability. Its Trench-Stop Technology offers very tight parameter distribution, high ruggedness with temperature-stable behavior, a short circuit withstand time of 10s, low VCE(SAT...
power semiconductor VBsemi Elec VBP16I20 600V trench and fieldstop IGBT for industrial applications
Product Overview The VBP16I20 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key applications include ...
650V 15A Trench Field Stop IGBT SPTECH IRGB4620D optimized for short circuit withstand and soft switching inverter
IRGB4620D 650V / 15A Trench Field Stop IGBTThe IRGB4620D is a 650V, 15A Trench Field Stop IGBT designed for high-reliability applications. It features a high breakdown voltage, short circuit rating, and very low saturation voltage (VCE(SAT) = 1.65V Typ. @ IC = 15A). Its soft current turn-off ...
High voltage IGBT SPTECH SPT40N120F1A1 1200V 40A TO247 package suitable for solar inverters and welding
Product OverviewThe SPT40N120F1A1 is a high-performance IGBT designed for demanding applications. It features a high breakdown voltage of 1200V and utilizes Trench-Stop Technology for enhanced speed, ruggedness, and short-circuit withstand capability. This product is ideal for use in Uninterruptible ...
high speed switching device VBsemi Elec VBM16I15 designed for power supplies and industrial welding systems
Product Overview The VBM16I15 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. This IGBT is avalanche energy ...
High speed switching VBsemi Elec VBE16I10 600V IGBT for SMPS and telecom power supply solutions
Product Overview The VBE16I10 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. The device is avalanche ...
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and motion control systems
SPT60N65F1A1 650V / 60A Trench Field Stop IGBTThe SPTECH 650V Trench Field Stop IGBTs are designed for high performance in demanding applications. They offer low switching losses, high energy efficiency, and robust avalanche ruggedness, making them ideal for motion control, solar applications, and ...
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating
Product Overview The VBP165I80 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply applications. Key features include a maximum junction ...
