IGBT module featuring low switching losses and high short circuit capability YANGJIE MG150HF12TFC2 ideal for servo control
Key Attributes
Model Number:
MG150HF12TFC2
Product Custom Attributes
Pd - Power Dissipation:
1.15kW
Td(off):
350ns
Td(on):
325ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.5nF
Input Capacitance(Cies):
11nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@4mA
Gate Charge(Qg):
1.56uC
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
6.8mJ
Turn-On Energy (Eon):
11.6mJ
Mfr. Part #:
MG150HF12TFC2
Package:
C2
Product Description
Product Overview
The MG150HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10us), and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts a low inductance package and a maximum junction temperature of 175.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=100 | 150 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 300 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 | V |
| Total Power Dissipation | Ptot | Tc=25, Tvjmax=175 | 1150 | W |
| IGBT Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =4mA,Tvj=25 | 5.0 / 5.8 / 6.6 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=150A,VGE=15V, Tvj=25 | 2.10 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=150A,VGE=15V, Tvj=125 | 2.45 | V |
| Gate Charge | QG | 1.56 | uC | |
| Input Capacitance | Cies | VCE=25V,VGE =0V, f=1MHz,Tvj=25 | 11.0 | nF |
| Reverse Transfer Capacitance | Cres | 0.5 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V,Tvj = 25 | 400 | nA |
| IGBT Switching Characteristics (Tvj=25) | ||||
| Turn-on Delay Time | td(on) | IC =150 A, VCE = 600 V, VGE = ± 15V, RG = 4.7Ω | 325 | ns |
| Rise Time | tr | 68 | ns | |
| Turn-off Delay Time | td(off) | 350 | ns | |
| Fall Time | tf | 85 | ns | |
| Energy Dissipation During Turn-on Time | Eon | 11.6 | mJ | |
| Energy Dissipation During Turn-off Time | Eoff | 6.8 | mJ | |
| IGBT Switching Characteristics (Tvj=125) | ||||
| Turn-on Delay Time | td(on) | IC =150 A, VCE = 600 V, VGE = ± 15V, RG = 4.7Ω | 380 | ns |
| Rise Time | tr | 75 | ns | |
| Turn-off Delay Time | td(off) | 405 | ns | |
| Fall Time | tf | 327 | ns | |
| Energy Dissipation During Turn-on Time | Eon | 17.5 | mJ | |
| Energy Dissipation During Turn-off Time | Eoff | 10.2 | mJ | |
| SC Data | ||||
| Short Circuit Current | Isc | Tp≤10us,VGE=15V, Tvj=150,Vcc=900V, VCEM≤1200V | 820 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 150 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 300 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=150A,Tvj=25 | 2.10 | V |
| Forward Voltage | VF | IF=150A,Tvj=125 | 2.10 | V |
| Diode Switching Characteristics (Tvj=25) | ||||
| Recovered Charge | Qrr | IF =150 A, VR=600V, -diF/dt =2250A/us | 9.4 | uC |
| Peak Reverse Recovery Current | Irr | 135 | A | |
| Reverse Recovery Energy | Erec | 6.4 | mJ | |
| Diode Switching Characteristics (Tvj=125) | ||||
| Recovered Charge | Qrr | IF =150 A, VR=600V, -diF/dt =2250A/us | 12.4 | uC |
| Peak Reverse Recovery Current | Irr | 155 | A | |
| Reverse Recovery Energy | Erec | 10.1 | mJ | |
| Module Characteristics | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 175 | ||
| Operating Junction Temperature | Tvj op | -40 to 150 | ||
| Storage Temperature | Tstg | -40 to 125 | ||
| Thermal Resistance Junction-to Case | RJC | per IGBT | 0.18 | K/W |
| Thermal Resistance Junction-to Case | RJC | per Diode | 0.31 | K/W |
| Thermal Resistance Case-to Sink | RCS | Conductive grease applied | 0.035 | K/W |
| Module Electrodes Torque | Mt | Recommended (M6) | 3.0 to 5.0 | N·m |
| Module-to-Sink Torque | Ms | Recommended (M6) | 3.0 to 5.0 | N·m |
| Weight of Module | G | 315 | g | |
2411220012_YANGJIE-MG150HF12TFC2_C20601999.pdf
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