Single IGBTs
Trench Field Stop IGBT SPTECH SPT75N65F1 650V 75A with excellent temperature stability and ruggedness
Product OverviewThe SPT75N65F1 is a 650V, 75A Trench Field Stop IGBT designed for high-speed switching applications. It features high ruggedness, temperature stability, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical Specificatio
TOSHIBA GT40QR21 STA1 E D discrete IGBT transistor featuring RoHS compatibility and TO 3P N package
GT40QR21 Discrete IGBTsThe GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT), offering high-speed switching capabilities with typical fall time (tf) of 0.20 s and reverse recovery time (trr) of 0.60 s. The device boasts a low saturation voltage of 1.9 V (typ.) and a high junction temperature capability of 175C (max).Product
1200V 40A trench field stop IGBT SPTECH IKW40N120H3 suitable for parallel switching in power systems
Product OverviewThe IKW40N120H3 is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. Featuring Trench-Stop Technology, it offers high-speed switching, excellent ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics systems. This IGBT is ideal for Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.Product AttributesB
650V 50A SPTECH SPT50N65F1A Trench Field Stop IGBT designed for performance in welding and solar systems
Product OverviewThe SPT50N65F1A is a 650V, 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It features low switching losses, high energy efficiency, and excellent avalanche capability, making it ideal for motion control, solar applications, and welding machines. The Trench-Stop Technology ensures high-speed switching, temperature stability, short circuit withstand time, and easy parallel switching.Product AttributesBrand: SPTECHProduct Code: SPT50N65F1
High voltage IGBT SPTECH SPT40N120F1C offering performance in solar inverters and welding equipment
Product OverviewThe SPT40N120F1C is a high-performance IGBT with Trench-Stop Technology, offering exceptional reliability and efficiency. It features a high breakdown voltage of 1200V, high-speed switching, and excellent ruggedness. Its positive temperature coefficient in VCEsat ensures easy parallel switching, and it boasts enhanced avalanche capability. This product is ideal for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC
Trench Field Stop IGBT SPT40N120T1B1 rated 1200V 40A with short circuit withstand time of 10 seconds
SPT40N120T1B1 Trench Field Stop IGBT The SPT40N120T1B1 is a 1200V / 40A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology, offering tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also boasts enhanced avalanche
1200V 40A Trench Field Stop IGBT SPTECH IKW40N120T2 with tight parameter distribution and ruggedness
Product OverviewThe IKW40N120T2 is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also offers enhanced avalanche capability.Product AttributesBrand:
partial switching PFC device SANKEN SLA5222 integrated IGBT and diode bridge rectifier for power applications
Sanken Electric SLA5222 Partial Switching PFC Integrated IGBT and Diode Bridge Rectifier The Sanken Electric SLA5222 is an integrated IGBT and diode bridge rectifier designed for partial switching PFC applications. It offers board space reduction, low saturation voltage for the IGBT, and a low forward voltage drop for the diode bridge rectifier. The device utilizes a clip lead for inner lead connections, contributing to low inductance, low resistance, and high power
Renesas 2sk2225 80 e t2 mos fet featuring 1500v vdss and fast switching speed for power applications
Product Overview The 2SK2225-80-E is a high-speed power switching MOS FET featuring a high breakdown voltage of 1500V and a drain current of 2A. It offers low drive current and is suitable for applications requiring fast switching characteristics. This component is classified under the "Standard" quality grade, making it appropriate for a wide range of electronic equipment. Product Attributes Brand: RENESAS Quality Grade: Standard Package Codes: PRSS0003ZP-A, PRSS0003ZD-A
RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode
RJH65T14DPQ-A0 650V - 50A - IGBT The RJH65T14DPQ-A0 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) optimized for current resonance applications such as induction heating and microwave ovens. It features a low collector-to-emitter saturation voltage (VCE(sat)) of 1.45V typ., a built-in fast recovery diode, and utilizes trench gate and thin wafer technology for enhanced performance. Product Attributes Brand: Renesas Package Code: PRSS0003ZH-A (TO-247A) Technical
Industrial motor drive power module onsemi NXH25C120L2C2SG with six 25 amp 1600 volt rectifiers and brake IGBT included
Product OverviewThe NXH25C120L2C2SG is a transfer-molded power module featuring a converter-inverter-brake circuit. It integrates six 25 A, 1600 V rectifiers, six 25 A, 1200 V IGBTs with inverse diodes, one 25 A, 1200 V brake IGBT with brake diode, and an NTC thermistor. Key advantages include low thermal resistance and a compact package with solderable pins. This module is suitable for industrial motor drives and servo drives.Product AttributesBrand: onsemi (Semiconductor
High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance
Product OverviewThe ISL9V3040x3ST-F085C is an EcoSPARK Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high energy capability of 300 mJ, a 400 V breakdown voltage, and a logic-level gate drive. This device is AEC-Q101 qualified and PPAP capable, making it suitable for high-current ignition systems and coil-on-plug applications. It is Pb-Free and RoHS Compliant.Product AttributesBrand: Semiconductor Components Industries, LLC (onsemi)Certificat
power switching device onsemi FGA40N65SMD 650 volt 40 amp field stop IGBT for industrial applications
Product OverviewThe FGA40N65SMD is a 650 V, 40 A Field Stop IGBT from ON Semiconductor, formerly Fairchild Semiconductor. This second-generation IGBT series utilizes innovative Field Stop IGBT technology, offering optimal performance with low conduction and switching losses. It is designed for critical applications such as photovoltaic inverters, UPS, welding machines, induction heating, communication power supplies, and ESS.Product AttributesBrand: ON Semiconductor (formerly
Silicon FS Trench IGBT OSEN OGH25T120 with built-in fast recovery diode and high thermal stability
Product Overview The OGH25T120 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key features include high thermal stability and a built-in fast-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines. Product Attributes Brand: OSEN Publication Order Number: OGH25T120 Revision: 21.2
power dissipation and switching controllability in onsemi FGY100T120RWD for demanding industrial uses
Product DescriptionUtilizing the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO247 3-lead package, the FGY100T120RWD offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation in various applications. Its advantages include low conduction loss, optimized switching, high current capability, and suitability for parallel operation due to a positive temperature coefficient. It is designed for
Ignition Coil Driver onsemi ISL9V3040S3ST N Channel IGBT with Enhanced SCIS Energy and Voltage Clamp
Product OverviewThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. They offer superior SCIS capability in space-saving D-Pak (TO-252), D-Pak (TO-263), TO-262, and TO-220 plastic packages. Internal diodes provide voltage clamping, eliminating the need for external components. EcoSPARK devices can be custom-made to specific clamp voltages.Product AttributesBrand
650 Volt 40 Amp IGBT onsemi FGB40T65SPD-F085 with Rugged Switching and Parallel Operation Capability
Product OverviewThe FGB40T65SPD-F085 is a 650 V, 40 A IGBT utilizing novel field stop 3rd generation technology. It offers optimized performance with low conduction and switching losses for high efficiency, along with enhanced blocking voltage and rugged high current switching reliability. This device is also advantageous for parallel operation. It is copacked with a soft, fast recovery diode and is AEC-Q101 qualified.Product AttributesBrand: onsemiOrigin: Semiconductor
Automotive Ignition IGBT onsemi ISL9V3040D3ST ECOSPARK Series with 150W Power Dissipation Capability
Product OverviewThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are next-generation ECOSPARK Ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. These devices offer outstanding SCIS capability in space-saving D-Pak (TO-252), D2-Pak (TO-263), and TO-220 plastic packages. Internal diodes provide voltage clamping, eliminating the need for external components. ECOSPARK devices can be custom-made to specific clamp voltages.Product AttributesBran
Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR
Product OverviewThe FGHL60T120RWD is an N-Channel, Field Stop VII (FS7) IGBT with an integrated SCR in a TO247-3L package. Utilizing novel field stop 7th generation IGBT technology and Gen7 Diode, it offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation. It is suitable for applications such as motor control, UPS, data center, and high-power switching.Product AttributesBrand: onsemiCertifications: RoHS CompliantT
650 volt 60 amp field stop igbt semiconductor device onsemi FGA60N65SMD suitable for photovoltaic inverters
Product OverviewThe FGA60N65SMD is a 650 V, 60 A Field Stop IGBT from ON Semiconductor, leveraging advanced Field Stop IGBT technology for optimal performance in applications demanding low conduction and switching losses. It offers high current capability, a positive temperature coefficient for easy paralleling, and low saturation voltage. This device is designed for demanding applications such as photovoltaic inverters, UPS, welding machines, PFC, and communication power
