Single IGBTs
Power Semiconductor onsemi NGTB40N120FL3WG with Soft Fast Recovery Diode and High Temperature Rating
Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop
Power semiconductor device onsemi FGHL40T65MQD 650 volt 40 amp trench IGBT for solar inverters and UPS
Product OverviewThe FGHL40T65MQD is a 650 V, 40 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low saturation voltage, and optimized switching characteristics, making it suitable for parallel operation. This device is designed for applications such as Solar Inverters, UPS, ESS, and PFC converters.Product AttributesBrand: Semiconductor Components Industries,
Fast Switching Field Stop Trench IGBT onsemi AFGHL50T65SQD with 650V Voltage and High Current Capability
Product OverviewThe AFGHL50T65SQD is a Field Stop Trench IGBT utilizing 4th generation high-speed technology. It is AEC Q101 qualified and offers optimal performance for both hard and soft switching topologies in automotive applications. Key advantages include its high current capability, low saturation voltage, fast switching, and tight parameter distribution, making it suitable for parallel operation.Product AttributesBrand: onsemi (Semiconductor Components Industries, LLC
Field Stop IGBT onsemi FGH40N60UFDTU 600 Volt 40 Amp Optimized for UPS Telecom and Welding Power Circuits
FGH40N60UFD IGBT - Field Stop 600 V, 40 AUtilizing novel Field Stop IGBT technology, ON Semiconductor's field stop IGBTs deliver optimal performance for applications such as solar inverters, UPS, welders, microwave ovens, telecom, ESS, and PFC. These devices are designed for scenarios requiring low conduction and switching losses, offering high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 40 A), high input impedance, and fast switching. The device is Pb
insulated gate bipolar transistor onsemi NGTB25N120FL3WG with soft fast co packaged free wheeling diode included
Product OverviewThis Insulated Gate Bipolar Transistor (IGBT) features an Ultra Field Stop Trench construction, offering a robust and cost-effective solution for demanding switching applications. It provides superior performance with low on-state voltage and minimal switching loss, making it well-suited for UPS and solar applications. The device includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.Product AttributesBrand: Semiconductor
Power semiconductor OSEN OGH50T65 Silicon FS Trench IGBT ideal for industrial UPS and welding machine
Product Overview The OGH50T65 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key benefits include high reliability, thermal stability, and a built-in quick-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines. Product Attributes Brand: OSEN Product Type: Silicon FS Trench IGBT
onsemi AFGHL75T65SQ Field Stop Trench IGBT Featuring 75 Amp 650 Volt Rating and Low Saturation Voltage
Product OverviewThe AFGHL75T65SQ is a Field Stop Trench IGBT from onsemi, utilizing novel 4th generation IGBT technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in various applications where a reverse recovery specification is not required. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low
Ignition Coil Driver onsemi ISL9V3040P3 ECOSPARK IGBT with AECQ101 Qualification and Voltage Clamping
Product DescriptionThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are next-generation ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. They offer superior SCIS (Self-Clamped Inductive Switching) capability in space-saving D-Pak, D2-Pak, TO-262, and TO-220 packages. Internal diodes provide voltage clamping, eliminating the need for external components. ECOSPARK devices can be customized for specific clamp voltages.Product AttributesBrand
650 Volt Field Stop Trench IGBT onsemi FGHL50T65MQDTL4 Featuring Low Saturation Voltage for Converter
Product OverviewThe FGHL50T65MQDTL4 is a Field Stop Trench IGBT featuring 4th generation mid-speed technology copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching with tight parameter distribution. Designed for demanding applications, it boasts a maximum junction temperature of 175C and a positive temperature coefficient for easy parallel operation. Typical applications include solar inverters,
60 Amp IGBT onsemi FGL60N100BNTDTU 1000 Volt with Advanced NPT Technology and High Input Impedance
Product OverviewThe FGL60N100BNTD is a 1000 V, 60 A NPT Trench IGBT utilizing Fairchild's proprietary trench design and advanced NPT technology. It offers superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation, making it ideal for hard switching applications such as UPS and welders. The device features high input impedance and a built-in fast recovery diode.Product AttributesBrand: ON Semiconductor (formerly Fairchild Semiconduct
Power transistor onsemi FGH75T65SHDT-F155 650V 75A field stop IGBT for UPS ESS and PFC applications
Product OverviewThe FGH75T65SHDT is a 650 V, 75 A Field Stop Trench IGBT utilizing novel field stop technology. It offers optimum performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are essential. Key advantages include a high maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and tight parameter
ultrafast IGBT transistor onsemi SGL160N60UFDTU for inverter motor control and power supply systems
Product OverviewThe Fairchild SGL160N60UFD is an Ultrafast IGBT from the UFD series, designed for high-speed switching applications. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, servo controls, and power supplies. Key features include high input impedance and a CO-PAK with an integrated Fast Diode (FRD) for enhanced performance.Product AttributesBrand: Fairchild Semiconductor CorporationProduct Series:
insulated gate bipolar transistor onsemi NGTB15N120FL2WG designed for high speed switching in welding and UPS
NGTB15N120FL2WG IGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.FeaturesExtremely Efficient Trench with Field Stop
Logic Level Gate Drive N Channel IGBT onsemi FGD3040G2 F085 for Automotive Coil On Plug Applications
Product OverviewThe FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 are N-Channel Ignition IGBTs from the EcoSPARK2 series. These devices offer a high Self Clamping Inductive Switching (SCIS) energy capability of 300mJ at 25C and feature a logic-level gate drive. They are qualified to AEC Q101 standards, RoHS compliant, and suitable for automotive ignition coil driver circuits and coil-on-plug applications.Product AttributesBrand: ON SemiconductorProduct
IGBT transistor module onsemi FGA40T65SHD 650 volt 40 amp field stop trench technology device
FGA40T65SHD 650 V, 40 A Field Stop Trench IGBTLeveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are critical. It provides high current capability, a positive temperature coefficient for easy parallel operation, and a low saturation voltage.Product AttributesBrand: ON Semiconductor (formerly Fairchild
Low Saturation Voltage Ultra Fast IGBT onsemi SGH40N60UFDTU Ideal for Motor Control and Servo Systems
SGH40N60UFD Ultra-Fast IGBT The Fairchild SGH40N60UFD is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high-speed switching. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, and servo controls. Key features include a low saturation voltage of 2.1V at 20A, high input impedance, and an integrated fast recovery diode (FRD) with a typical reverse recovery time (trr) of
switching IGBT onsemi FGH80N60FD2TU designed for industrial power control and induction heating systems
Product OverviewUtilizing novel field stop IGBT technology, ON Semiconductor's FGH80N60FD2 offers optimal performance for induction heating and PFC applications. This IGBT is designed for scenarios requiring low conduction and switching losses, featuring high current capability and a low saturation voltage of 1.8 V (Typ.) at 40 A. It boasts high input impedance and fast switching characteristics, making it a suitable choice for demanding applications.Product AttributesBrand:
power switching IGBT onsemi AFGY160T65SPD-B4 with low saturation voltage and AEC-Q101 certification
Product OverviewThe AFGY160T65SPD-B4 is a Field Stop Trench IGBT designed for high-efficiency power switching applications. It features very low saturation voltage, high junction temperature capability, and excellent parallel operation performance. This device is copacked with a soft, fast recovery diode and is AEC-Q101 qualified.Product AttributesBrand: onsemiCertifications: AEC-Q101 Qualified, PPAP Capable, PbFree, Halogen Free/BFR Free, RoHS CompliantOrigin: Semiconductor
High Current Capability and Low Saturation Voltage onsemi FGHL40T65MQDT Field Stop Trench IGBT Device
Product OverviewThe FGHL40T65MQDT is a Field Stop Trench IGBT featuring 4th generation mid-speed technology, copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching, making it suitable for parallel operation. This device is designed for applications such as solar inverters, UPS, ESS, and PFC converters.Product AttributesBrand: ON SemiconductorCertifications: RoHS CompliantTechnical SpecificationsPara
Power electronics component onsemi FGHL50T65MQD 650 volt 50 amp field stop trench IGBT for industrial
Product OverviewThe FGHL50T65MQD is a 650 V, 50 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low saturation voltage (1.45 V typ. at 50 A), and optimized switching characteristics. Designed for applications requiring high reliability and performance, it is suitable for solar inverters, UPS, ESS, PFC, and converters.Product AttributesBrand: onsemiCertifications: RoHS
