Power semiconductor device onsemi FGHL40T65MQD 650 volt 40 amp trench IGBT for solar inverters and UPS
Key Attributes
Model Number:
FGHL40T65MQD
Product Custom Attributes
Pd - Power Dissipation:
238W
Td(off):
109ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
9pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3V@40mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
86nC@15V
Reverse Recovery Time(trr):
33ns
Switching Energy(Eoff):
260uJ
Turn-On Energy (Eon):
330uJ
Input Capacitance(Cies):
2.756nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
64pF
Mfr. Part #:
FGHL40T65MQD
Package:
TO-247-3L
Product Description
Product Overview
The FGHL40T65MQD is a 650 V, 40 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low saturation voltage, and optimized switching characteristics, making it suitable for parallel operation. This device is designed for applications such as Solar Inverters, UPS, ESS, and PFC converters.
Product Attributes
- Brand: Semiconductor Components Industries, LLC
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
| Collector-to-Emitter Voltage | VCES | 650 | V | |
| Gate-to-Emitter Voltage | VGES | ±20 | V | |
| Transient Gate-to-Emitter Voltage | VGES | ±30 | V | |
| Collector Current (Note 1) | IC | 80 | A | TC = 25°C |
| Collector Current (Note 1) | IC | 40 | A | TC = 100°C |
| Pulsed Collector Current (Note 2) | ILM | 160 | A | |
| Pulsed Collector Current (Note 3) | ICM | 160 | A | |
| Diode Forward Current (Note 1) | IF | 40 | A | TC = 25°C |
| Diode Forward Current (Note 1) | IF | 25 | A | TC = 65°C |
| Pulsed Diode Maximum Forward Current | IFM | 160 | A | |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse, tp = 8.3 ms, TC = 25°C) | IF,SM | 85 | A | |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse, tp = 8.3 ms, TC = 150°C) | IF,SM | 80 | A | |
| Maximum Power Dissipation | PD | 238 | W | TC = 25°C |
| Maximum Power Dissipation | PD | 119 | W | TC = 100°C |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C | |
| Maximum Lead Temperature for Soldering Purposes (1/8 from case for 5 s) | TL | 300 | °C | |
| Thermal Resistance Junction-to-Case, for IGBT | RθJC | 0.63 | °C/W | |
| Thermal Resistance Junction-to-Case, for Diode | RθJC | 1.6 | °C/W | |
| Thermal Resistance Junction-to-Ambient | RθJA | 40 | °C/W | |
| Collector-emitter breakdown voltage, gate-emitter short-circuited | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | ΔBVCES/ ΔTJ | -0.6 | V/°C | VGE = 0 V, IC = 1 mA |
| Collector-emitter cut-off current, gate-emitter short-circuited | ICES | 250 | μA | VGE = 0 V, VCE = 650 V |
| Gate leakage current, collector-emitter short-circuited | IGES | ±400 | nA | VGE = 20 V, VCE = 0 V |
| Gate-emitter threshold voltage | VGE(th) | 3.0 - 4.5 - 6.0 | V | VGE = VCE, IC = 40 mA |
| Collector-emitter saturation voltage | VCE(sat) | 1.45 | V | VGE = 15 V, IC = 40 A |
| Collector-emitter saturation voltage | VCE(sat) | 1.77 | V | VGE = 15 V, IC = 40 A, TJ = 175°C |
| Collector-emitter saturation voltage | VCE(sat) | 1.8 | V | VGE = 15 V, IC = 40 A, TJ = 175°C |
| Input capacitance | Cies | 2756 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | 64 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse transfer capacitance | Cres | 9 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate charge total | Qg | 86 | nC | VCE = 400 V, IC = 40 A, VGE = 15 V |
| Gate-to-Emitter charge | Qge | 16 | nC | VCE = 400 V, IC = 40 A, VGE = 15 V |
| Gate-to-Collector charge | Qgc | 21 | nC | VCE = 400 V, IC = 40 A, VGE = 15 V |
| Turn-on delay time | td(on) | 20 | ns | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Rise time | tr | 13 | ns | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off delay time | td(off) | 116 | ns | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Fall time | tf | 51 | ns | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on switching loss | Eon | 0.33 | mJ | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off switching loss | Eoff | 0.26 | mJ | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Total switching loss | Ets | 0.59 | mJ | TC = 25°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on delay time | td(on) | 22 | ns | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Rise time | tr | 30 | ns | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off delay time | td(off) | 109 | ns | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Fall time | tf | 46 | ns | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on switching loss | Eon | 0.86 | mJ | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off switching loss | Eoff | 0.52 | mJ | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Total switching loss | Ets | 1.38 | mJ | TC = 25°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on delay time | td(on) | 20 | ns | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Rise time | tr | 14 | ns | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off delay time | td(off) | 127 | ns | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Fall time | tf | 76 | ns | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on switching loss | Eon | 0.60 | mJ | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off switching loss | Eoff | 0.42 | mJ | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Total switching loss | Ets | 1.02 | mJ | TC = 175°C, VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on delay time | td(on) | 20 | ns | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Rise time | tr | 32 | ns | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off delay time | td(off) | 119 | ns | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Fall time | tf | 63 | ns | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-on switching loss | Eon | 1.28 | mJ | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Turn-off switching loss | Eoff | 0.77 | mJ | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Total switching loss | Ets | 2.05 | mJ | TC = 175°C, VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load |
| Diode Forward Voltage | VFM | 2.55 | V | IF = 40 A, TC = 25°C |
| Diode Forward Voltage | VFM | 2.3 - 2.85 | V | IF = 40 A, TC = 175°C |
| Reverse Recovery Energy | Erec | 56 | μJ | IF = 40 A, dlF/dt = 200 A/μs, TC = 175°C |
| Diode Reverse Recovery Time | Trr | 33 | ns | IF = 40 A, dlF/dt = 200 A/μs, TC = 25°C |
| Diode Reverse Recovery Time | Trr | 222 | ns | IF = 40 A, dlF/dt = 200 A/μs, TC = 175°C |
| Diode Reverse Recovery Charge | Qrr | 47 | nC | IF = 40 A, dlF/dt = 200 A/μs, TC = 25°C |
| Diode Reverse Recovery Charge | Qrr | 759 | nC | IF = 40 A, dlF/dt = 200 A/μs, TC = 175°C |
2410010231_onsemi-FGHL40T65MQD_C898201.pdf
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