Single IGBTs
power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor and relay driver systems
Product OverviewThe HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. These devices are ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies, and drivers for solenoids and relays. Formerly Developmental Type TA49316.Product
power transistor onsemi FGHL75T65MQDTL4 650 volt 75 amp field stop trench IGBT for power electronics
Product OverviewThe FGHL75T65MQDTL4 is a 650 V, 75 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology with full current-rated copack diode. It offers a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. Optimized for smooth and efficient switching, this device is suitable for applications such as solar inverters, UPS, ESS, and PFC converters.Product
field stop igbt onsemi FGH40N60SFDTU 600 volt 40 amp offering performance in industrial applications
FGH40N60SFD - 600 V, 40 A Field Stop IGBT The FGH40N60SFD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop technology. It offers an optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, microwave ovens, and telecom systems. Key advantages include high current capability, low saturation voltage (VCE(sat) = 2.3 V @ IC = 40 A), high input impedance, and fast
High current onsemi FGH75T65SHDTL4 IGBT designed for UPS telecom ESS and solar inverter applications
Product DescriptionUtilizing novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where low conduction and switching losses are essential. These IGBTs feature a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. They are 100% tested for
N-Channel Ignition IGBT onsemi ISL9V5045S3ST-F085 with 480V voltage and 51A current in D2-Pak package
ON Semiconductor ISL9V5045S3ST_F085 N-Channel Ignition IGBTThe ON Semiconductor ISL9V5045S3ST_F085 is a next-generation ignition IGBT designed for automotive ignition circuits, specifically as a coil driver. It offers outstanding SCIS (Self-Clamped Inductive Switching) capability in the industry-standard D2-Pak (TO-263) plastic package. Internal diodes provide voltage clamping without external components, and devices can be custom-made to specific clamp voltages.Product
power module onsemi FGH75T65SQD-F155 featuring 650 volt collector emitter voltage and positive temperature coefficient
Product OverviewLeveraging novel field stop IGBT technology, ON Semiconductor's 4th generation IGBTs offer optimal performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications. These devices are designed for low conduction and switching losses, featuring a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage.Product AttributesBrand: ON SemiconductorCertificati
Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems
Product OverviewThe FGH75T65SHD is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor, leveraging novel field stop IGBT technology for optimal performance in demanding applications. It offers a positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. This IGBT is designed for applications requiring low conduction and switching losses, including solar inverters, UPS, welders, telecom, ESS, and PFC systems
Switching Silicon Trench FS IGBT MIRACLE POWER MIQ75T065DFS for Energy Storage and Inductive Heating
Product OverviewThe MIQ75T065DFS is a Silicon Trench FS IGBT from Miracle Technology Co., Ltd. It offers low VCE(sat), fast switching, and high ruggedness, making it suitable for demanding applications. This IGBT is short-circuit rated and designed for use in solar inverters, energy storage systems, industrial inductive heating, and uninterrupted power supplies.Product AttributesBrand: Miracle Technology Co., Ltd.Material: Silicon Trench FS IGBTOrigin: Not specifiedColor: Not
High voltage switching NPT IGBT device onsemi HGTG11N120CND ideal for AC DC motor controls and power supply drivers
Product OverviewThe HGTG11N120CND is a Non-Punch Through (NPT) Series N-Channel IGBT with an integrated Anti-Parallel Hyperfast Diode. This device combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making it ideal for high voltage switching applications at moderate frequencies where low conduction losses are crucial. Applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and
Automotive Ignition Coil Driver onsemi ISL9V3040S3ST-F085C IGBT with 300 mJ Energy and AEC-Q101 Qualification
Product OverviewThe ISL9V3040x3ST-F085C is an EcoSPARK Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high energy capability of 300 mJ at 25C, features a logic-level gate drive, and is AEC-Q101 Qualified and PPAP Capable. This device is suitable for high current ignition systems and coil-on-plug applications.Product AttributesBrand: Semiconductor Components Industries, LLC (onsemi)Certifications: AEC-Q101 Qualified, PPAP Capable, PbFree, RoHS
650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems
Product OverviewThe MIQ50T065DFS is a Silicon Trench FS IGBT from Miracle Technology Co., Ltd. featuring low switching losses, a positive temperature coefficient, and a 650V Trench Gate/Field Stop Process. It is designed for applications such as inverters, charging piles, on-board chargers, and uninterrupted power supplies.Product AttributesBrand: Miracle Technology Co., Ltd.Material: SiliconTechnology: Trench Gate/Field Stop ProcessTechnical SpecificationsTypeVCES (V)IC (A
1200V 25A IGBT Module MCC MIP25R12E1TN-BP with Low Switching Losses and High Short Circuit Capability
MIP25R12E1TN IGBT ModulesThe MIP25R12E1TN is a 1200V, 25A IGBT module designed for various power electronics applications. It features low switching losses, low Vce(sat) with a positive temperature coefficient, and includes a fast and soft recovery anti-parallel FWD. The module boasts a low inductance case, high short circuit capability (10s), and a maximum junction temperature of 175. Its epoxy meets UL 94 V-0 flammability rating and it is Lead Free Finish/RoHS Compliant
High Speed Switching Field Stop IGBT MagnaChip Semicon MBQ40T65QESTH with Halogen Free Certification
Product Overview The Magnachip MBQ40T65QES is a 650V Field Stop IGBT designed for high-speed switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers excellent quality and performance. It is suitable for applications such as inverters, welding converters, and high-range switching frequency converters. Product Attributes Brand: Magnachip Semiconductor Ltd. Technology: Field Stop Trench IGBT Package: TO-247 Certificatio
650 volt 75 amp IGBT trench field stop luxin semi YGW75N65FP with short circuit withstand capability
Product OverviewThe YGW75N65FP is a 650V / 75A Trench Field Stop IGBT designed for high-speed switching applications. It offers improved reliability with a high breakdown voltage, enhanced ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.Product AttributesBrand: LU-SemiProduct Code: YGW75N65FPPackage: TO247Packaging: TubeTechnical SpecificationsParameterSym
high voltage IGBT luxin-semi YGW60N65T1 650V 60A trench field stop with stable thermal performance
Product OverviewThe YGW60N65T1 is a 650V / 60A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, stable temperature performance, low VCEsat, and easy parallel switching capabilities. Its high breakdown voltage and enhanced avalanche capability make it suitable for demanding applications.Product AttributesBrand: LU-SEMIProduct Package: TO247Packaging: TubeTechnical Specifications
650V 50A IGBT Luxin-semi YGW50N65F1A Featuring Trench Stop Technology for Rugged and Power Conversion
Product OverviewThe YGW50N65F1A is a 650V / 50A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short circuit withstand time of 5s. The device offers a low VCEsat and easy parallel switching capability due to its positive temperature coefficient. It is suitable for use in Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with
Trench Field Stop IGBT 650V 45A Luxin-semi YGD45N65U1 Suitable for Inverters and Welding Converters
Product OverviewThe YGD45N65U1 is a 650V / 45A Trench Field Stop IGBT designed for high-speed switching applications. It offers high ruggedness, temperature stability, and low VCEsat, making it suitable for parallel switching. Its enhanced avalanche capability and high breakdown voltage contribute to improved reliability. This IGBT is ideal for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies
Second Generation Fieldstop Trench IGBT MagnaChip Semicon MBQ60T65PESTH TO247 Package for Industrial
Product Overview The Magnachip MBQ60T65PES is a Second Generation High Speed Fieldstop Trench IGBT designed for applications requiring high efficiency and ruggedness. Leveraging advanced Magnachip technology, this IGBT offers superior switching behavior and low power loss, making it ideal for solar inverters, UPS, IH cookers, welders, and PFC applications where low conduction losses are critical. It features high input impedance and a maximum junction temperature of 175C.
Switching 1200V Field Stop Trench IGBT MagnaChip Semicon MBQ40T120QESTH Featuring Ultra Soft Fast Recovery Diode
Product Overview The Magnachip MBQ40T120QESTH is a high-speed 1200V Field Stop Trench IGBT designed for applications requiring efficient switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers a low VCE(SAT) of 2.1V at 40A, high switching performance, and excellent quality. It features an ultra-soft, fast recovery anti-parallel diode with ultra-narrowed VF distribution control and a positive temperature coefficient
High power IGBT inverter module 650V 400A luxin-semi LGM400HF65S4T1A ideal for UPS systems and welding machines
Product OverviewThe LGM400HF65S4T1A is a 650V/400A IGBT module designed for high-power applications. It features a positive temperature coefficient for VCEsat, low switching losses, and a low inductance case. The module utilizes an isolated copper baseplate with DBC technology for efficient thermal management. It is ideal for use in welding machines, UPS systems, and motor drives.Product AttributesBrand: LU-SemiModel: LGM400HF65S4T1AVoltage Rating: 650VCurrent Rating:
