Trench Field Stop IGBT 650V 45A Luxin-semi YGD45N65U1 Suitable for Inverters and Welding Converters
Key Attributes
Model Number:
YGD45N65U1
Product Custom Attributes
Pd - Power Dissipation:
166W
Td(off):
129ns
Td(on):
48ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
38pF
Input Capacitance(Cies):
2.19nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
85nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
135A
Output Capacitance(Coes):
98pF
Switching Energy(Eoff):
480uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
YGD45N65U1
Package:
TO-3P
Product Description
Product Overview
The YGD45N65U1 is a 650V / 45A Trench Field Stop IGBT designed for high-speed switching applications. It offers high ruggedness, temperature stability, and low VCEsat, making it suitable for parallel switching. Its enhanced avalanche capability and high breakdown voltage contribute to improved reliability. This IGBT is ideal for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: Lu-Semi
- Product Code: YGD45N65U1
- Package: TO-3P
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj 25 |
| 650 | V | VGE=0V , IC=250A | ||
| DC collector current | IC | 90 | A | TC = 25C |
| 45 | A | TC = 100C | ||
| Diode Forward current | IF | 90 | A | TC = 25C |
| 45 | A | TC = 100C | ||
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | (tp10s,D0.01) |
| Pulse collector current | ICM | 135 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 135 | A | tp limited by Tjmax |
| Power dissipation | Ptot | 166 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+150 | C | |
| Soldering temperature | - | 260 | C | wave soldering 1.6mm from case for 10s |
| Mounting torque | M3 screw | 0.6 | Nm | Maximum of mounting processes |
| IGBT thermal resistance, junction - case | R(j-c) | 0.90 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.30 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 46 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.00 - 5.60 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 | V | VGE=15V, IC=45A, Tj = 25C |
| 2.70 | V | VGE=15V, IC=45A, Tj = 175C | ||
| Zero gate voltage collector current | ICES | 40 | A | VCE = 650V, VGE = 0V, Tj = 25C |
| 4000 | A | VCE = 650V, VGE = 0V, Tj = 175C | ||
| Gate-emitter leakage current | IGES | 400 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 22 | S | VCE = 20V, IC = 45A |
| Diode Forward Voltage | VFM | 1.90 | V | IF = 45A |
| Input capacitance | Cies | 2190 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 98 | pF | |
| Reverse transfer capacitance | Cres | 38 | pF | |
| Gate charge | QG | 85 | nC | VCC = 520V, IC = 45A, VGE = 15V |
| Turn-on Delay Time | td(on) | 48 | ns | Tj=25C, VCC = 400V, IC = 45A, VGE = 0/15V, Rg=20 |
| Rise Time | tr | 85 | ns | Tj=25C, VCC = 400V, IC = 45A, VGE = 0/15V, Rg=20 |
| Turn-off Delay Time | td(off) | 129 | ns | Tj=25C, VCC = 400V, IC = 45A, VGE = 0/15V, Rg=20 |
| Fall Time | tf | 80 | ns | Tj=25C, VCC = 400V, IC = 45A, VGE = 0/15V, Rg=20 |
| Turn-on Energy | Eon | 2.20 | mJ | Tj=25C, VCC = 400V, IC = 45A, VGE = 0/15V, Rg=20 |
| Turn-off Energy | Eoff | 0.48 | mJ | Tj=25C, VCC = 400V, IC = 45A, VGE = 0/15V, Rg=20 |
2507221720_luxin-semi-YGD45N65U1_C49215480.pdf
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