650 volt 75 amp IGBT trench field stop luxin semi YGW75N65FP with short circuit withstand capability
Key Attributes
Model Number:
YGW75N65FP
Product Custom Attributes
Pd - Power Dissipation:
500W
Td(off):
150ns
Td(on):
75ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
25pF
Input Capacitance(Cies):
4.6nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
130nC
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
250pF
Reverse Recovery Time(trr):
75ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
5mJ
Mfr. Part #:
YGW75N65FP
Package:
TO-247
Product Description
Product Overview
The YGW75N65FP is a 650V / 75A Trench Field Stop IGBT designed for high-speed switching applications. It offers improved reliability with a high breakdown voltage, enhanced ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW75N65FP
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 |
| DC collector current | IC | 75 | A | TC = 100C |
| Diode Forward current | IF | 75 | A | TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Short Circuit Withstand Time | TSC | 5 | s | VGE= 15V, VCE 400V |
| Power dissipation | Ptot | 500 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+175 | C | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.32 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.0 - 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 | V | IC=75A, Tj = 25C |
| Zero gate voltage collector current | ICES | 0.1 | A | VCE = 650V, VGE = 0V, Tj = 25C |
| Gate-emitter leakage current | IGES | 200 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 45 | S | VCE = 20V, IC = 75A |
| Input capacitance | Cies | 4600 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 250 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | 25 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Gate charge | QG | 130 | nC | VCC = 520V, IC = 75A, VGE = 15V |
| Short circuit collector current | ICSC | 590 | A | VGE=15V,tSC5us, VCC=400V, Tjstart=25C |
| Turn-on Delay Time | td(on) | 75 | ns | Tj=25C, VCC = 400V, IC =75A, VGE = 0/15V, Rg=20 |
| Rise Time | tr | 140 | ns | Tj=25C, VCC = 400V, IC =75A, VGE = 0/15V, Rg=20 |
| Turn-off Delay Time | td(off) | 150 | ns | Tj=25C, VCC = 400V, IC =75A, VGE = 0/15V, Rg=20 |
| Fall Time | tf | 75 | ns | Tj=25C, VCC = 400V, IC =75A, VGE = 0/15V, Rg=20 |
| Turn-on Energy | Eon | 5.0 | mJ | Tj=25C, VCC = 400V, IC =75A, VGE = 0/15V, Rg=20 |
| Turn-off Energy | Eoff | 1.8 | mJ | Tj=25C, VCC = 400V, IC =75A, VGE = 0/15V, Rg=20 |
| Diode Forward Voltage | VFM | 2.0 | V | IF = 75A, Tj = 25C |
| Reverse Recovery Time | Trr | 75 | ns | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 15 | A | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Charge | Qrr | 665 | nC | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C |
2410121317_luxin-semi-YGW75N65FP_C4153744.pdf
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