power module onsemi FGH75T65SQD-F155 featuring 650 volt collector emitter voltage and positive temperature coefficient
Key Attributes
Model Number:
FGH75T65SQD-F155
Product Custom Attributes
Td(off):
114ns
Pd - Power Dissipation:
375W
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
14pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.6V@75mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
128nC@15V
Reverse Recovery Time(trr):
43ns
Switching Energy(Eoff):
181uJ
Turn-On Energy (Eon):
746uJ
Input Capacitance(Cies):
4.845nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
155pF
Mfr. Part #:
FGH75T65SQD-F155
Package:
TO-247-3
Product Description
Product Overview
Leveraging novel field stop IGBT technology, ON Semiconductor's 4th generation IGBTs offer optimal performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications. These devices are designed for low conduction and switching losses, featuring a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage.
Product Attributes
- Brand: ON Semiconductor
- Certifications: Pb-Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage | VGES | 20 | V | |
| Transient Gate to Emitter Voltage | 30 | V | ||
| Collector Current (TC = 25C) | IC | 150 | A | |
| Collector Current (TC = 100C) | IC | 75 | A | |
| Pulsed Collector Current (TC = 25C) | ILM (Note 1) | 300 | A | VCC = 400 V,VGE = 15 V, IC = 300 A, RG = 3 , Inductive Load |
| Pulsed Collector Current | ICM (Note 2) | 300 | A | Repetitive rating: Pulse width limited by max. junction temperature. |
| Diode Forward Current (TC = 25C) | IF | 75 | A | |
| Diode Forward Current (TC = 100C) | IF | 50 | A | |
| Pulsed Diode Maximum Forward Current | IFM (Note 2) | 300 | A | |
| Maximum Power Dissipation (TC = 25C) | PD | 375 | W | |
| Maximum Power Dissipation (TC = 100C) | PD | 188 | W | |
| Operating Junction Temperature | TJ | 55 to +175 | C | |
| Storage Temperature Range | Tstg | 55 to +175 | C | |
| Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | TL | 300 | C | |
| Collector to Emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES/ TJ | 0.6 | V/C | IC = 1 mA, Reference to 25C |
| Collector CutOff Current | ICES | 250 | A | VCES, VGE = 0 V |
| GE Leakage Current | IGES | 400 | nA | VGE = VGES, VCE = 0 V |
| GE Threshold Voltage | VGE(th) | 2.6 / 4.5 / 6.4 | V | IC = 75 mA, VCE = VGE |
| Collector to Emitter Saturation Voltage | VCE(sat) | 1.6 / 2.1 | V | IC = 75 A, VGE = 15 V |
| Collector to Emitter Saturation Voltage (TC = 175C) | VCE(sat) | 1.92 | V | IC = 75 A, VGE = 15 V |
| Input Capacitance | Cies | 4845 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 155 | pF | |
| Reverse Transfer Capacitance | Cres | 14 | pF | |
| TurnOn Delay Time (IC = 18.8 A) | td(on) | 23 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Rise Time (IC = 18.8 A) | tr | 10 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOff Delay Time (IC = 18.8 A) | td(off) | 120 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Fall Time (IC = 18.8 A) | tf | 7 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOn Switching Loss (IC = 18.8 A) | Eon | 300 | J | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOff Switching Loss (IC = 18.8 A) | Eoff | 70 | J | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Total Switching Loss (IC = 18.8 A) | Ets | 370 | J | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOn Delay Time (IC = 37.5 A) | td(on) | 26 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Rise Time (IC = 37.5 A) | tr | 19 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOff Delay Time (IC = 37.5 A) | td(off) | 114 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Fall Time (IC = 37.5 A) | tf | 11 | ns | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOn Switching Loss (IC = 37.5 A) | Eon | 746 | J | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| TurnOff Switching Loss (IC = 37.5 A) | Eoff | 181 | J | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Total Switching Loss (IC = 37.5 A) | Ets | 927 | J | VCC = 400 V, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C |
| Total Gate Charge | Qg | 128 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate to Emitter Charge | Qge | 23 | nC | |
| Gate to Collector Charge | Qgc | 29 | nC | |
| Diode Forward Voltage (TC = 25C) | VFM | 2.0 / 2.6 | V | IF = 50 A |
| Diode Forward Voltage (TC = 175C) | VFM | 1.64 | V | IF = 50 A |
| Reverse Recovery Energy (TC = 175C) | Erec | 61 | J | IF = 50 A, dIF / dt = 200 A/ s |
| Diode Reverse Recovery Time (TC = 25C) | trr | 43 | ns | |
| Diode Reverse Recovery Time (TC = 175C) | trr | 210 | ns | |
| Diode Reverse Recovery Charge (TC = 25C) | Qrr | 90 | nC | |
| Diode Reverse Recovery Charge (TC = 175C) | Qrr | 1280 | nC | |
| Thermal Resistance, Junction to Case (IGBT) | R JC(IGBT) | 0.4 | C/W | |
| Thermal Resistance, Junction to Case (Diode) | R JC(Diode) | 0.65 | C/W | |
| Thermal Resistance, Junction to Ambient | R JA | 40 | C/W |
2410122111_onsemi-FGH75T65SQD-F155_C462122.pdf
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