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quality Power Semiconductor onsemi NGTB40N120FL3WG with Soft Fast Recovery Diode and High Temperature Rating factory
quality Power Semiconductor onsemi NGTB40N120FL3WG with Soft Fast Recovery Diode and High Temperature Rating factory

Power Semiconductor onsemi NGTB40N120FL3WG with Soft Fast Recovery Diode and High Temperature Rating

Key Attributes
Model Number: NGTB40N120FL3WG
Product Custom Attributes
Td(off):
145ns
Pd - Power Dissipation:
454W
Td(on):
18ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
80pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@0.4mA
Gate Charge(Qg):
212nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
1.6mJ
Input Capacitance(Cies):
4.912nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
140pF
Mfr. Part #:
NGTB40N120FL3WG
Package:
TO-247
Product Description

Product Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop Technology, a maximum junction temperature of 175C, a soft fast reverse recovery diode, and optimization for high-speed switching.

Typical Applications

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: PbFree Devices

Technical Specifications

Rating Symbol Value Unit Test Conditions
ABSOLUTE MAXIMUM RATINGS VCES 1200 V
IC (@ TC = 25C) 80 A
IC (@ TC = 100C) 40 A
ICM (Pulsed collector current, Tpulse limited by TJmax) 160 A
PD (@ TC = 25C) 454 W
OPERATING TEMPERATURE TJ -55 to +175 C
Tstg -55 to +175 C
THERMAL CHARACTERISTICS R JC (IGBT) 0.33 C/W junction-to-case
R JC (Diode) 0.61 C/W junction-to-case
R JA 40 C/W junction-to-ambient
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) V(BR)CES 1200 V VGE = 0 V, IC = 500 A
VCEsat (@ IC = 40 A, VGE = 15 V) 1.7 V
VGE(th) 4.5 - 6.5 V VGE = VCE, IC = 400 A
ICES (@ VCE = 1200 V, VGE = 0 V) 0.5 mA
IGES (@ VGE = 20 V, VCE = 0 V) 200 nA
Cies 4912 pF VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes 140 pF VCE = 20 V, VGE = 0 V, f = 1 MHz
Cres 80 pF VCE = 20 V, VGE = 0 V, f = 1 MHz
Qg 212 nC VCE = 600 V, IC = 40 A, VGE = 15 V
Eoff (Turn-off switching loss) 1.1 mJ VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 15 V
DIODE CHARACTERISTIC VF (@ IF = 40 A) 3.0 V
trr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) 86 ns TJ = 25C
Qrr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) 0.56 C TJ = 25C
Irm (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) 12 A TJ = 25C
dIrrm/dt -210 A/s
trr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) 136 ns TJ = 125C
ORDERING INFORMATION NGTB40N120FL3WG TO-247 (Pb-Free) 30 Units / Rail

2410121847_onsemi-NGTB40N120FL3WG_C411217.pdf

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