High Current Capability and Low Saturation Voltage onsemi FGHL40T65MQDT Field Stop Trench IGBT Device
Key Attributes
Model Number:
FGHL40T65MQDT
Product Custom Attributes
Td(off):
75ns
Pd - Power Dissipation:
238W
Td(on):
18ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
9pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3V@40mA
Gate Charge(Qg):
80nC@15V
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
86ns
Switching Energy(Eoff):
490uJ
Turn-On Energy (Eon):
880uJ
Input Capacitance(Cies):
2.68nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
80pF
Mfr. Part #:
FGHL40T65MQDT
Package:
TO-247-3LD
Product Description
Product Overview
The FGHL40T65MQDT is a Field Stop Trench IGBT featuring 4th generation mid-speed technology, copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching, making it suitable for parallel operation. This device is designed for applications such as solar inverters, UPS, ESS, and PFC converters.
Product Attributes
- Brand: ON Semiconductor
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Junction Temperature | TJ | 175 | C | - |
| - | ||||
| Positive Temperature Coefficient | - | Easy Parallel Operating | - | - |
| High Current Capability | - | - | - | - |
| Low Saturation Voltage | VCE(Sat) | 1.45 (Typ.) | V | IC = 40 A |
| 1.65 | IC = 40 A, TJ = 175C | |||
| 100% of the Parts are Tested for ILM | ILM | 160 | A | Note 2 |
| Smooth and Optimized Switching | - | - | - | - |
| Tight Parameter Distribution | - | - | - | - |
| Collector to Emitter Voltage | VCES | 650 | V | - |
| Gate to Emitter Voltage | VGES | 20 / 30 | V | - |
| Collector Current | IC | 60 | A | @ TC = 25C |
| 40 | @ TC = 100C | |||
| Pulsed Collector Current | ILM | 160 | A | Note 2 |
| Pulsed Collector Current | ICM | 160 | A | Note 3 |
| Diode Forward Current | IF | 60 | A | @ TC = 25C |
| 40 | @ TC = 100C | |||
| Pulsed Diode Maximum Forward Current | IFM | 160 | A | - |
| Maximum Power Dissipation | PD | 238 | W | @ TC = 25C |
| 119 | @ TC = 100C | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | 55 to +175 | C | - |
| Maximum Lead Temp. for Soldering Purposes | TL | 260 | C | 1/8 from case for 5 s |
| Thermal Resistance Junction-to-case (IGBT) | R JC | 0.63 | C/W | - |
| Thermal Resistance Junction-to-case (Diode) | R JC | 0.91 | C/W | - |
| Thermal Resistance Junction-to-ambient | R JA | 40 | C/W | - |
| Collector to Emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES TJ | -0.6 | V/C | VGE = 0 V, IC = 1 mA |
| Collector to Emitter Cut-off Current | ICES | 250 | A | VGE = 0 V, VCE = 650 V |
| Gate Leakage Current | IGES | 400 | nA | VGE = 20 V, VCE = 0 V |
| Gate to Emitter Threshold Voltage | VGE(th) | 3.0 - 6.0 | V | VGE = VCE, IC = 40 mA |
| Input Capacitance | Cies | 2680 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 80 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 9 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate Charge Total | Qg | 80 | nC | VCE = 400 V, IC = 40 A, VGE = 15 V |
| Gate to Emitter Charge | Qge | 16 | nC | VCE = 400 V, IC = 40 A, VGE = 15 V |
| Gate to Collector Charge | Qgc | 19 | nC | VCE = 400 V, IC = 40 A, VGE = 15 V |
| Turn-on Delay Time | td(on) | 16 | ns | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 16 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Rise Time | tr | 10 | ns | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 11 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Turn-off Delay Time | td(off) | 82 | ns | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 93 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Fall Time | tf | 51 | ns | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 88 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Turn-on Switching Loss | Eon | 0.35 | mJ | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 0.64 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Turn-off Switching Loss | Eoff | 0.25 | mJ | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 0.49 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Total Switching Loss | Ets | 0.60 | mJ | TJ = 25C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V |
| 1.13 | TJ = 175C, VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V | |||
| Diode Forward Voltage | VF | 1.7 - 2.15 | V | IF = 40 A, TJ = 25C |
| 1.65 | IF = 40 A, TJ = 175C | |||
| Diode Reverse Recovery Energy | Erec | 54 | J | TJ = 25C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s |
| 360 | TJ = 175C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s | |||
| Diode Reverse Recovery Time | Trr | 42 | ns | TJ = 25C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s |
| 104 | TJ = 175C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s | |||
| Diode Reverse Recovery Charge | Qrr | 329 | nC | TJ = 25C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s |
| 1379 | TJ = 175C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s | |||
| Diode Reverse Recovery Current | Irr | 15 | A | TJ = 25C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s |
| 27 | TJ = 175C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/s |
2410121849_onsemi-FGHL40T65MQDT_C5209097.pdf
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