IGBT transistor module onsemi FGA40T65SHD 650 volt 40 amp field stop trench technology device
Key Attributes
Model Number:
FGA40T65SHD
Product Custom Attributes
Td(off):
65.6ns
Pd - Power Dissipation:
268W
Td(on):
19.2ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
23pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.5V@40mA
Gate Charge(Qg):
72.2nC@15V
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
31.8ns
Switching Energy(Eoff):
297uJ
Turn-On Energy (Eon):
1.01mJ
Input Capacitance(Cies):
1.995nF
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
70pF
Mfr. Part #:
FGA40T65SHD
Package:
TO-3PN
Product Description
FGA40T65SHD 650 V, 40 A Field Stop Trench IGBT
Leveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are critical. It provides high current capability, a positive temperature coefficient for easy parallel operation, and a low saturation voltage.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector to Emitter Voltage | VCES | 650 | V | |||
| Gate to Emitter Voltage | VGES | -20 | 20 | V | ||
| Transient Gate to Emitter Voltage | -30 | 30 | V | |||
| Collector Current @ TC = 25C | IC | 80 | A | |||
| Collector Current @ TC = 100C | IC | 40 | A | |||
| Pulsed Collector Current @ TC = 25C | ILM (1) | VCC = 400 V, VGE = 15 V, IC =120 A, RG = 30 Inductive Load | 120 | A | ||
| Pulsed Collector Current | ICM (2) | Repetitive rating: Pulse width limited by max. junction temperature | 120 | A | ||
| Diode Forward Current @ TC = 25C | IF | 40 | A | |||
| Diode Forward Current @ TC = 100C | IF | 20 | A | |||
| Pulsed Diode Maximum Forward Current | IFM (2) | 120 | A | |||
| Maximum Power Dissipation @ TC = 25C | PD | 268 | W | |||
| Maximum Power Dissipation @ TC = 100C | PD | 134 | W | |||
| Operating Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | Tstg | -55 | 175 | C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | TL | 300 | C | |||
| Electrical Characteristics of the IGBT (TC = 25C unless otherwise noted) | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 1 mA | 650 | V | ||
| Temperature Coefficient of Breakdown Voltage | BVCES / TJ | IC = 1 mA, Reference to 25C | -0.6 | V/C | ||
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V | 250 | A | ||
| G-E Leakage Current | IGES | VGE = VGES, VCE = 0 V | 400 | nA | ||
| G-E Threshold Voltage | VGE(th) | IC = 40 mA, VCE = VGE | 3.5 | 5.5 | 7.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V | 1.6 | 2.1 | V | |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V, TC = 175C | 2.14 | V | ||
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1MHz | 1995 | pF | ||
| Output Capacitance | Coes | 70 | pF | |||
| Reverse Transfer Capacitance | Cres | 23 | pF | |||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25C | 19.2 | ns | ||
| Rise Time | tr | 34.4 | ns | |||
| Turn-Off Delay Time | td(off) | 65.6 | ns | |||
| Fall Time | tf | 9.6 | ns | |||
| Turn-On Switching Loss | Eon | 1010 | J | |||
| Turn-Off Switching Loss | Eoff | 297 | J | |||
| Total Switching Loss | Ets | 1307 | J | |||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175C | 18.4 | ns | ||
| Rise Time | tr | 32.8 | ns | |||
| Turn-Off Delay Time | td(off) | 71.2 | ns | |||
| Fall Time | tf | 14.4 | ns | |||
| Turn-On Switching Loss | Eon | 1390 | J | |||
| Turn-Off Switching Loss | Eoff | 541 | J | |||
| Total Switching Loss | Ets | 1931 | J | |||
| Total Gate Charge | Qg | VCE = 400 V, IC = 40 A, VGE = 15 V | 72.2 | nC | ||
| Gate to Emitter Charge | Qge | 13.5 | nC | |||
| Gate to Collector Charge | Qgc | 28.5 | nC | |||
| Electrical Characteristics of the Diode (TC = 25C unless otherwise noted) | ||||||
| Diode Forward Voltage | VFM | IF = 20 A, TC = 25C | 2.2 | 2.8 | V | |
| Diode Forward Voltage | VFM | IF = 20 A, TC = 175C | 1.94 | V | ||
| Reverse Recovery Energy | Erec | IF =20 A, dIF/dt = 200 A/s, TC = 175C | 50 | J | ||
| Diode Reverse Recovery Time | trr | TC = 25C | 31.8 | ns | ||
| Diode Reverse Recovery Time | trr | TC = 175C | 192 | ns | ||
| Diode Reverse Recovery Charge | Qrr | TC = 25C | 50.6 | nC | ||
| Diode Reverse Recovery Charge | Qrr | TC = 175C | 699 | nC | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case, Max. | RJC(IGBT) | 0.56 | C/W | |||
| Thermal Resistance, Junction to Case, Max. | RJC(Diode) | 1.71 | C/W | |||
| Thermal Resistance, Junction to Ambient, Max. | RJA | 40 | C/W | |||
2410121920_onsemi-FGA40T65SHD_C898159.pdf
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