Trench Field Stop IGBT SPTECH SPT25N120F1A1 1200V 25A with Low VCEsat and High Avalanche Capability
Key Attributes
Model Number:
SPT25N120F1A1
Product Custom Attributes
Td(off):
180ns
Operating Temperature:
-40℃~+150℃
Td(on):
35ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
125nC@15V
Reverse Recovery Time(trr):
420ns
Switching Energy(Eoff):
320uJ
Turn-On Energy (Eon):
2mJ
Mfr. Part #:
SPT25N120F1A1
Package:
TO-247-3
Product Description
SPT25N120F1A1 - 1200V / 25A Trench Field Stop IGBT
The SPT25N120F1A1 is a 1200V / 25A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, enhanced ruggedness with temperature stability, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. The device also boasts improved avalanche capability.
Product Attributes
- Brand: Superic (implied from URL)
- Model: SPT25N120F1A1
- Technology: Trench Field Stop IGBT
- Voltage Rating: 1200V
- Current Rating: 25A
Applications
- Uninterruptible Power Supplies
- Solar inverters
- Welding
- PFC applications
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | - |
| DC collector current, limited by Tjmax | IC | 50 (TC=25C), 25 (TC=100C) | A | - |
| Diode Forward current, limited by Tjmax | IF | 50 (TC=25C), 25 (TC=100C) | A | - |
| Turn off safe operating area | - | -50 | A | VCE 1350V, Tj 150C |
| Operating junction temperature | Tj | -40...+150 | C | - |
| Storage temperature | Ts | -55...+150 | C | - |
| Soldering temperature, wave soldering | - | 260 | C | 1.6mm (0.063in.) from case for 10s |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | - |
| Diode thermal resistance, junction - case | R(j-c) | 1.2 | K/W | - |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | - |
| Electrical Characteristics (IGBT, Tj= 25 unless otherwise specified) | ||||
| Static Collector-Emitter breakdown voltage | BVCES | 1200 | V | VGE=0V , IC=1mA |
| Gate threshold voltage | VGE(th) | 5.1 / 5.8 / 6.4 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation voltage | VCE(sat) | 2.0 / 2.5 | V | VGE=15V, IC=25A, Tj = 25C / 150C |
| Zero gate voltage collector current | ICES | <1 / 100 / 1000 | A | VCE = 1350V, VGE = 0V, Tj = 25C / 150C |
| Gate-emitter leakage current | IGES | - / - / 100 | nA | VCE = 0V, VGE = 20V |
| Dynamic Characteristics (IGBT, Tj= 25 unless otherwise specified) | ||||
| Input capacitance | Cies | - / 2500 / - | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | - / 70 / - | pF | - |
| Reverse transfer capacitance | Cres | - / 50 / - | pF | - |
| Gate charge | QG | - / 125 / - | nC | VCC = 600V, IC = 25A, VGE = 15V |
| Switching Characteristic (IGBT, Inductive Load, Tj = 25C) | ||||
| Turn-on delay time | td(on) | - / 35 / - | nS | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10 |
| Rise time | tr | - / 32 / - | nS | - |
| Turn-on energy | Eon | - / 2.0 / - | mJ | - |
| Turn-off delay time | td(off) | - / 180 / - | nS | - |
| Fall time | tf | - / 40 / - | nS | - |
| Turn-off energy | Eoff | - / 0.32 / - | mJ | - |
| Electrical Characteristics (DIODE, Tj= 25 unless otherwise specified) | ||||
| Diode Forward Voltage | VFM | - / 3.1 / - | V | IF = 25A |
| Reverse Recovery Time | Trr | - / 420 / - | nS | IF= 25A, di/dt= 600A/s |
| Reverse Recovery Current | Irr | - / 17 / - | A | - |
| Reverse Recovery Charge | Qrr | - / 2570 / - | nC | - |
2505231205_SPTECH-SPT25N120F1A1_C480178.pdf
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