252 3L Package 650V MOSFET A Power microelectronics APJ14N65D designed for UPS and PFC circuit applications
Key Attributes
Model Number:
APJ14N65D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.32pF@650V
Number:
1 N-channel
Pd - Power Dissipation:
25.5W
Input Capacitance(Ciss):
438pF@650V
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
APJ14N65D
Package:
TO-252-3
Product Description
Product Overview
The APJ14N65D is a 650V N-Channel Enhancement Mode MOSFET from the CoolFET II family, engineered with charge balance technology to deliver extremely low on-resistance and low gate charge performance. This MOSFET is ideal for applications demanding superior power density and outstanding efficiency, such as Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) circuits.
Product Attributes
- Brand: APM Microelectronics ()
- Product Family: CoolFET II
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: TO-252-3L
Technical Specifications
| Model | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Package | Description |
|---|---|---|---|---|---|
| APJ14N65D (AP65R650) | 650 (Type: 730) | 14 (IDM) | < 650 (Type: 560) | TO-252-3L | 650V N-Channel Enhancement Mode MOSFET |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (VGS = 0V) | 650 | V | ||
| ID | Continuous Drain Current | (TC=25 unless otherwise noted) | 8 | A | ||
| IDM | Pulsed Drain Current | (note1) | 14 | A | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulse Avalanche Energy | (note2) | 125 | mJ | ||
| PD | Power Dissipation | (TC = 25C) | 25.5 | W | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 | +150 | C | ||
| RthJC | Thermal Resistance, Junction-to-Case | 4.9 | C/W | |||
| RthJA | Thermal Resistance, Junction-to-Ambient | 49 | C/W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain to source breakdown voltage | VGS=0V, ID=250uA | 650 | 700 | V | |
| BVDSS / TJ | Breakdown voltage temperature coefficient | ID=250uA, referenced to 25oC | 0.7 | V/oC | ||
| IDSS | Drain to source leakage current | VDS=650V, VGS=0V | 1 | uA | ||
| IDSS | Drain to source leakage current | VDS=520V, TC=125oC | 50 | uA | ||
| IGSS | Gate to source leakage current, forward | VGS=30V, VDS=0V | 100 | nA | ||
| IGSS | Gate to source leakage current, reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| VGS(TH) | Gate threshold voltage | VDS=VGS, ID=250uA | 2.5 | 3.3 | 4.5 | V |
| RDS(ON) | Drain to source on state resistance | VGS=10V, ID =3.2A | 560 | 650 | m | |
| Ciss | Input capacitance | VGS=0V, VDS=100V, f=1MHz | 438 | pF | ||
| Coss | Output capacitance | VGS=0V, VDS=100V, f=1MHz | 19.5 | pF | ||
| Crss | Reverse transfer capacitance | VGS=0V, VDS=100V, f=1MHz | 1.32 | pF | ||
| td(on) | Turn on delay time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 84.8 | ns | ||
| tr | Rising time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 25.2 | ns | ||
| td(off) | Turn off delay time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 227.6 | ns | ||
| tf | Fall time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 26.8 | ns | ||
| Qg | Total gate charge | VDS=480V, VGS=10V, ID=3.2A | 11 | nC | ||
| Qgs | Gate-source charge | VDS=480V, VGS=10V, ID=3.2A | 2.1 | -- | ||
| Qgd | Gate-drain charge | VDS=480V, VGS=10V, ID=3.2A | 5.6 | -- | ||
| IS | Continuous source current | Integral reverse p-n Junction diode in the MOSFET | 11 | A | ||
| ISM | Pulsed source current | 44 | A | |||
| VSD | Diode forward voltage drop. | IS=3.2A, VGS=0V | 0.7 | 1.5 | V | |
| Trr | Reverse recovery time | IS=3.2A, VGS=0V, Vdd=400V, dIF/dt=100A/us | 313 | ns | ||
| Qrr | Reverse recovery Charge | IS=3.2A, VGS=0V, Vdd=400V, dIF/dt=100A/us | 0.877 | uC | ||
| Package Mechanical Data: TO-252-3L Dimensions | |||
|---|---|---|---|
| Ref | Min. | Typ. | Max. |
| A | 2.10 | ||
| A2 | 0 | 0.66 | |
| B | 0.40 | 2.50 | |
| C | 0.10 | 0.86 | |
| D | 0.60 | ||
| E | 0.083 | 0 | 0.026 |
| G | 0.016 | 0.098 | 0.004 |
| H | 0.034 | 0.024 | |
| L | 6.40 | 9.50 | 10.70 |
| V1 | 0.374 | 0.421 | 0.053 |
| V2 | 0.065 | 5.90 | 6.30 |
| L2 | 0 | 6 | 7 |
| B2 | 5.18 | 5.48 | 0.202 |
| C2 | 0.44 | 0.58 | 0.017 |
| D1 | 5.30REF | ||
| E1 | 4.63 | 0.182 | 0.209REF |
| Reel Spectification-TO-252 Dimensions | |||
|---|---|---|---|
| Ref | Min. | Typ. | Max. |
| W | 15.90 | 1.65 | 7.40 |
| E | 1.40 | 16.10 | 1.85 |
| F | 7.60 | 1.60 | 0.626 |
| D0 | 0.065 | 0.291 | 0.055 |
| D1 | 0.634 | 0.073 | 0.299 |
| P0 | 0.063 | 1.40 | 1.60 |
| P1 | 7.90 | 10.45 | 10.60 |
| P2 | 0.411 | 0.417 | 0.053 |
| A0 | 0.065 | 0.24 | 0.27 |
| B0 | 0.009 | 0.011 | 0.055 |
| K0 | 0.063 | 3.90 | 4.10 |
| T | 6.90 | 0.271 | 10P0 |
| t1 | 0.154 | 0.161 | 8.10 |
Note:
- 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. EAS data shows Max. rating. L=0.5mH, IAS =3.2A, VDD =50V, RG=25.
- 3. Test condition is Pulse Test: ISD ID, di/dt = 100A/us, VDD BVDSS, Starting at TJ =25.
- 4. Power dissipation is limited by 150 junction temperature.
- 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Copyright: APM-Microelectronice
Edition Date: 2018/1/31
Version: Rve1.0
2410121457_A-Power-microelectronics-APJ14N65D_C3011409.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
