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quality loss rectifier diode amsem MUR120SB designed for switching mode converters and inverter applications factory
quality loss rectifier diode amsem MUR120SB designed for switching mode converters and inverter applications factory

loss rectifier diode amsem MUR120SB designed for switching mode converters and inverter applications

Key Attributes
Model Number: MUR120SB
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
900mV@1A
Current - Rectified:
1A
Mfr. Part #:
MUR120SB
Package:
SMB
Product Description

Product Overview

The MUR120SB is an ultra-fast recovery rectifier diode designed for high-efficiency rectification and freewheeling applications in switching mode converters and inverters. It features low power loss, ultra-fast recovery time, glass passivated chip junction, low leakage current, and high forward surge capability. This product meets MSL level 1 standards and is suitable for consumer, computer, and telecommunication equipment.

Product Attributes

  • Brand: An hui Anmei Semiconductor Co.,Ltd.
  • Model: MUR120SB
  • Origin: China (implied by company name)
  • Material: Glass passivated chip junction
  • Certifications: Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C; Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant; Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Polarity: Color band denotes cathode end

Technical Specifications

Parameter Symbol Unit Condition MUR120SB
Repetitive Peak Reverse Voltage VRRM V Ta=25 200
Average Forward Current IF(AV) A Ta=25 1.0
Surge(Non-repetitive)Forward Current IFSM A 8.3ms Single Half Sine Wave JEDEC Method 30
Peak Forward Voltage VFM V IF=1.0A 0.9
Peak Reverse Current IRRM1 A VRM=VRRM, Ta=25 5.0
Peak Reverse Current IRRM2 A Ta=125 300
Reverse Recovery time Trr ns IF =0.5A, IR =1A, RR =0.25A 25
Thermal Resistance(Typical) RJ-L /W Between junction and ambient 20
Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C 25
Non repetitive reverse avalanche energy ER mJ I(BR)R = 0.7 A, inductive load 10
Storage Temperature Tstg 60Hz Half-sine wave,1 cycle, Ta=25 -55 ~ +150
Junction Temperature Tj 60Hz Half-sine wave,1 cycle, Ta=25 -55 ~ +150

2410121959_amsem-MUR120SB_C18336925.pdf

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