Power switching device ANHI ASA60R170E MOSFET transistor with low gate threshold voltage and leakage
Key Attributes
Model Number:
ASA60R170E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
3.79pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.76nF@50V
Pd - Power Dissipation:
34W
Gate Charge(Qg):
37.84nC
Mfr. Part #:
ASA60R170E
Package:
TO-220F
Product Description
Product Overview
The ASA60R170E is a Silicon N-Channel MOS field-effect transistor designed for high-efficiency power switching applications. It features a low drain-source on-resistance (RDS(ON) = 0.139 typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is suitable for various power supply topologies including Boost PFC, single-ended flyback, and two-transistor forward, as well as HB, AHB, and LLC topologies. It finds application in PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Package: PG-TO220F
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 605 | V | VGS=0V, ID=10mA | |
| Gate Threshold Voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA | |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | uA | VDS=600V, VGS=0V, Tj=25C |
| Gate-Source Leakage Current | IGSS | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-Source On-State Resistance | RDS(on) | 0.139 - 0.17 | VGS=10V, ID=12.5A, Tj=25C | ||
| Input Capacitance | Ciss | - | 1760 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output Capacitance | Coss | - | 176 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse Transfer Capacitance | Crss | - | 3.79 | pF | VGS=0V, VDS=50V, f=10kHz |
| Gate Charge Total | Qg | - | 37.84 | nC | VDD=400V, ID=11.3A, VGS=10V |
| Continuous Drain Current | ID | - | 25 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed Drain Current | ID,pulse | - | 75 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche Energy, Single Pulse | EAS | - | 845 | mJ | - |
| Power Dissipation | Ptot | - | 34 | W | TC=25C |
| Thermal Resistance, Junction-Case | RthJC | - | 3.67 | C/W | - |
| Thermal Resistance, Junction-Ambient | RthJA | - | 80 | C/W | device on PCB, minimal footprint |
| Diode Forward Voltage | VSD | - | 0.71 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse Recovery Time | trr | - | 320 | ns | VR=400V, IF=11.3A, diF/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 4.770 | uC | VR=400V, IF=11.3A, diF/dt=100A/s |
| Peak Reverse Recovery Current | Irrm | - | 29.1 | A | VR=400V, IF=11.3A, diF/dt=100A/s |
2410121525_ANHI-ASA60R170E_C5439997.pdf
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