Silicon N Channel Power MOSFET ANHI ASW65R110E Suitable for Boost PFC and Telecom Power Applications
Key Attributes
Model Number:
ASW65R110E
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+100℃
RDS(on):
110mΩ
Gate Threshold Voltage (Vgs(th)):
4.2V
Reverse Transfer Capacitance (Crss@Vds):
6.75pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
2.497nF@50V
Pd - Power Dissipation:
277.8W
Gate Charge(Qg):
52nC
Mfr. Part #:
ASW65R110E
Package:
TO-247
Product Description
Product Overview
The ASW65R110E is a Silicon N-Channel Power MOSFET designed for high-efficiency power conversion applications. It features low drain-source on-resistance (RDS(on)) of 0.095 (typ.) and easy gate control. This enhancement mode MOSFET is suitable for use in Boost PFC switches, half-bridge or resonance half-bridge topologies, server power supplies, telecom power, EV charging, solar inverters, and UPS applications.
Product Attributes
- Brand: Not explicitly stated, but implied by part number prefix 'ASW'
- Package: TO247
- Internal Circuit: Symmetric half bridge or Series e topologies
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.095 - 0.110 | VGS=10V, ID=14A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 13.4 | f=1MHz, open drain | |
| Input capacitance | Ciss | 2497 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 239 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 6.75 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 23 | ns | VDD=400V,VGS=10V,ID=25A, RG=2 |
| Rise time | tr | 28 | ns | VDD=400V,VGS=10V,ID=25A, RG=2 |
| Turn-off delay time | td(off) | 108.4 | ns | VDD=400V,VGS=10V,ID=25A, RG=2 |
| Fall time | tf | 24 | ns | VDD=400V,VGS=10V,ID=25A, RG=2 |
| Gate to source charge | Qgs | 7.1 | nC | VDD=400V, ID=25A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 20 | nC | VDD=400V, ID=25A, VGS=0 to 10V |
| Gate charge total | Qg | 52 | nC | VDD=400V, ID=25A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 9 | V | VDD=400V, ID=25A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.69 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 380.8 | ns | VR=400V, IF=25A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | 8.8 | uC | VR=400V, IF=25A,diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 45.2 | A | VR=400V, IF=25A,diF/dt=100A/s |
| Continuous drain current | ID | 30 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 90 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 2528 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 36 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | 277.8 | W | TC=25C |
| Storage temperature | Tstg | -55 - 100 | C | |
| Operating junction temperature | Tj | -55 - 100 | C | |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | 0.45 | C/W | |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
2410121550_ANHI-ASW65R110E_C5440019.pdf
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