P Channel MOSFET ALJ SI2301 designed for battery powered systems portable equipment and load switches
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.5A
RDS(on):
150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Input Capacitance(Ciss):
381pF
Output Capacitance(Coss):
49pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
5.6nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a P-Channel logic enhancement mode power MOSFET manufactured using high cell density, DMOS trench technology. This advanced design is optimized to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management applications in notebooks, portable equipment, battery-powered systems, load switches, and DSCs.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Product Line: SOT-23 Plastic-Encapsulate MOSFETS
- Model: SI2301
- Channel Type: P-Channel
- Technology: Logic Enhancement Mode, High Cell Density DMOS Trench Technology
- Marking: A1SHB
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-source voltage | -20 | V | |||
| ID | Continuous drain current | -2.5 | A | |||
| RDS(ON) | Drain-Source on-state resistance | VGS = -2.5 V, ID = -2A | 110 | 150 | m | |
| RDS(ON) | Drain-Source on-state resistance | VGS = -4.5 V, ID = -2.5A | 90 | 110 | m | |
| Maximum Ratings (Ta=25 C unless otherwise noted) | ||||||
| VDS | Drain-source voltage | -20 | V | |||
| VGS | Gate-source voltage | 8 | V | |||
| ID | Continuous drain current | -2.5 | A | |||
| IDM | Pulsed Drain Current 1) | -13 | A | |||
| PD | Power dissipation | 0.4 | W | |||
| TJ | Operating Junction temperature | 150 | C | |||
| Tstg | Storage temperature | -55 | 150 | C | ||
| Thermal Characteristic | ||||||
| RJA | Thermal Resistance from Junction to Ambient 2) | (t 5s) | 312.5 | C /W | ||
| RJC | Thermal Resistance from Junction to Case | 30 | C /W | |||
| Electrical Characteristics (Ta=25 C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| V(BR)DSS | Drain- source breakdown voltage | VGS = 0 V, ID = -250uA | -20 | V | ||
| IDSS | Zero gate voltage drain current | VDS = -20 V, VGS = 0 V | -1 | A | ||
| IGSS | Gate-body leakage current | VGS = 8V, VDS = 0 V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate threshold voltage | VGS=VDS, ID = -250uA | -0.4 | -1 | V | |
| RDS(on) | Drain-Source on-state resistance | VGS = -4.5 V, ID = -2.5A | 90 | 110 | m | |
| RDS(on) | Drain-Source on-state resistance | VGS = -2.5 V, ID = -2A | 110 | 150 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = -15V, f = 1 MHz | 381 | pF | ||
| Coss | Output capacitance | 49 | pF | |||
| Crss | Reverse transfer capacitance | 25 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on delay time | VDS = -6V, RL = 6 RGEN = 6, VGS = -4.5V | 61.6 | ns | ||
| tr | Rise time | 23.1 | ns | |||
| td(off) | Turn-off delay time | 47.6 | ns | |||
| tf | Fall time | 7.9 | ns | |||
| Total Gate Charge | ||||||
| Qg | Total gate charge | VDS = -6V, VGS = -4.5V, ID = -2.5A | 5.6 | nC | ||
| Qgs | Gate-source charge | 2.4 | nC | |||
| Qgd | Gate-drain charge | 1.3 | nC | |||
| Drain-source body diode characteristics | ||||||
| VSD | Diode forward voltage 3) | VGS = 0 V, IS = -1A | -0.7 | -1.4 | V | |
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. The value of RJA is measured with the device mounted on 1 in FR-4 board in a still air environment with Ta=25.
3. Diode forward voltage.
2410121447_ALJ-SI2301_C22400356.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
