Switching current source MOSFET ARK micro DMX11C55EA 600V N Channel depletion mode power transistor
Key Attributes
Model Number:
DMX11C55EA
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
28mA
RDS(on):
700Ω
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Input Capacitance(Ciss):
11.4pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
560pC
Mfr. Part #:
DMX11C55EA
Package:
SOT-89
Product Description
Product Overview
The ARK Microelectronics DMX11C55EA is a 600V N-Channel Depletion-Mode Power MOSFET designed for various switching and current source applications. It features a depletion mode (normally-on) operation, free from secondary breakdown, and utilizes proprietary advanced planar technology with a rugged polysilicon gate cell structure. This MOSFET offers improved ESD capability, high input impedance, and is RoHS compliant, with a halogen-free option available.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Part Number: DMX11C55EA
- Package: SOT-89
- Marking: 11C55
- Certifications: RoHS Compliant, Halogen-free Available
- Origin: China (Implied by company address)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | -- | -- | V | VGS=-5V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 1 | A | VDS=600V, VGS=-5V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 10 | A | VGS=20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | -10 | A | VGS=-20V, VDS=0V |
| Saturated Drain-to-Source Current | IDSS | 10 | -- | 30 | mA | VGS=0V, VDS=25V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 600 | 700 | VGS=0V, ID=5mA [3] | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -- | -1.5 | V | VDS=3V, ID=8A |
| Forward Transconductance | gfs | -- | 14 | -- | mS | VDS=10V, ID=5mA |
| Input Capacitance | Ciss | -- | 11.4 | -- | pF | VGS=-5V, VDS=25V, f=1.0MHz |
| Output Capacitance | Coss | -- | 7.7 | -- | pF | VGS=-5V, VDS=25V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 3.5 | -- | pF | VGS=-5V, VDS=25V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 0.56 | -- | nC | VGS=-5V~5V, VDS=25V, ID=10mA |
| Gate-to-Source Charge | Qgs | -- | 0.27 | -- | nC | VGS=-5V~5V, VDS=25V, ID=10mA |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 0.07 | -- | nC | VGS=-5V~5V, VDS=25V, ID=10mA |
| Turn-on Delay Time | td(on) | -- | 9.2 | -- | ns | VGS=-5V~5V, VDD=25V, ID=10mA, RG=10 |
| Rise Time | trise | -- | 30.0 | -- | ns | VGS=-5V~5V, VDD=25V, ID=10mA, RG=10 |
| Turn-off Delay Time | td(off) | -- | 13.6 | -- | ns | VGS=-5V~5V, VDD=25V, ID=10mA, RG=10 |
| Fall Time | tfall | -- | 91.6 | -- | ns | VGS=-5V~5V, VDD=25V, ID=10mA, RG=10 |
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=5mA, VGS=-5V |
| Continuous Drain Current | ID | -- | -- | 0.028 | A | TA=25 |
| Pulsed Drain Current | IDM | -- | -- | 0.1 | A | [2] |
| Power Dissipation | PD | -- | -- | 1.0 | W | TA=25 |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | TA=25 |
| Thermal Resistance, Junction-to-Case | RJC | -- | 125 | -- | /W | TA=25 |
| Operating and Storage Temperature Range | TJ & TSTG | -55 | -- | 150 | -- | |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds |
2504101957_ARK-micro-DMX11C55EA_C46532091.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
