Dual P Channel 20V Enhancement Mode MOSFET ARK micro AKF20P45D ideal for compact power management solutions
Key Attributes
Model Number:
AKF20P45D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@1.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Number:
2 P-Channel
Pd - Power Dissipation:
7.8W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AKF20P45D
Package:
DFN-6(2x2)
Product Description
AKF20P45D Dual P-Channel 20V Enhancement Mode MOSFET
The AKF20P45D is a Dual P-Channel 20V Enhancement Mode MOSFET from ARK Microelectronics. It offers fast switching speed, low on-resistance, and a small footprint, making it suitable for charger switches, load switches for portable devices, and DC/DC converters. It features typical ESD protection of 2500V and is RoHS compliant and Halogen-free available.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, China
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Remark | BVDSS | RDS(ON) (Max.) | ID |
| AKF20P45D | DFN2*2 | Halogen Free | -20V | 35m @VGS=-4.5V | -4.5A |
| 50m @VGS=-2.5V | -4.5A | ||||
| 100m @VGS=-1.8V | -4.5A | ||||
| 160m @VGS=-1.5V | -1.5A |
| Symbol | Parameter | Rating | Unit | Test Conditions |
| VDSS | Drain-to-Source Voltage | -20 | V | TA=25 unless otherwise specified |
| ID | Continuous Drain Current | -4.5 | A | TA=25 unless otherwise specified |
| IDM | Pulsed Drain Current | -15 | A | TA=25 unless otherwise specified |
| PD | Power Dissipation | 7.8 | W | TA=25 unless otherwise specified |
| VGS | Gate-to-Source Voltage | 8 | V | TA=25 unless otherwise specified |
| TL | Soldering Temperature | 260 | TA=25 unless otherwise specified | |
| TJ and TSTG | Operating and Storage Temperature Range | -55 to 150 | TA=25 unless otherwise specified | |
| RJC | Thermal Resistance, Junction-to-Case | 16 | /W | TA=25 unless otherwise specified |
| BVDSS | Drain-to-Source Breakdown Voltage | -20 | V | VGS=0V, ID=-250A |
| IDSS | Drain-to-Source Leakage Current | -1 | A | VDS=-20VVGS=0V |
| IDSS | Drain-to-Source Leakage Current | -100 | A | VDS=-20VVGS=0V TJ=125 |
| IGSS | Gate-to-Source Leakage Current | 15 | A | VGS=+8V, VDS=0V |
| IGSS | Gate-to-Source Leakage Current | -15 | A | VGS=-8V, VDS=0V |
| RDS(ON) | Static Drain-to-Source On-Resistance | 29 | m | VGS=-4.5V, ID=-3.8A[3] |
| RDS(ON) | Static Drain-to-Source On-Resistance | 35 | m | VGS=-2.5V, ID=-3.3A[3] |
| RDS(ON) | Static Drain-to-Source On-Resistance | 42 | m | VGS=-1.8V, ID=-1A[3] |
| RDS(ON) | Static Drain-to-Source On-Resistance | 55 | m | VGS=-1.5V, ID=-0.5A[3] |
| VGS(th) | Gate-to-Source Threshold Voltage | -0.5 | V | VGD=0V, ID=-250A |
| GFS | Forward Transconductance | 23 | S | VDS=-10V, IDS=-3.8A[3] |
| QG | Total Gate Charge | 10 | nC | VGS=-4.5V VDS=-10V, ID=-4.9A |
| QGS | Gate-to-Source Charge | 1.5 | nC | VGS=-4.5V VDS=-10V, ID=-4.9A |
| QGD | Gate-to-Drain (Miller) Charge | 2.5 | nC | VGS=-4.5V VDS=-10V, ID=-4.9A |
| td(ON) | Turn-on Delay Time | 18 | ns | VGS=-4.5V VDD=-10V, ID=-3.9A RG=1 |
| trise | Rise Time | 20 | ns | VGS=-4.5V VDD=-10V, ID=-3.9A RG=1 |
| td(OFF) | Turn-off Delay Time | 35 | ns | VGS=-4.5V VDD=-10V, ID=-3.9A RG=1 |
| tfall | Fall Time | 12 | ns | VGS=-4.5V VDD=-10V, ID=-3.9A RG=1 |
| ISD | Continuous Source Current | -4.5 | A | Integral P-N Diode in MOSFET |
| ISM | Maximum Pulsed Current | -15 | A | Integral P-N Diode in MOSFET |
| VSD | Diode Forward Voltage | -1.2 | V | ISD=-3.9A[3], VGS=0V |
2411220055_ARK-micro-AKF20P45D_C3031425.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
