N Channel MOSFET ANHI AUN050N08BGL Silicon Material with 85 Volt Maximum Drain Source Voltage Rating
Key Attributes
Model Number:
AUN050N08BGL
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
65A
RDS(on):
5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
107.1pF
Number:
1 N-channel
Output Capacitance(Coss):
1.215nF
Pd - Power Dissipation:
151W
Input Capacitance(Ciss):
4.553nF
Gate Charge(Qg):
63.7nC@10V
Mfr. Part #:
AUN050N08BGL
Package:
DFN5x6-8
Product Description
Product Overview
This series of N-Channel Silicon MOSFETs, including models AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, and AUB056N08BGL, are designed for efficient power management applications. They feature low drain-source on-resistance (RDS(ON) = 4.9m typ.) and easy gate switching control due to their enhancement mode operation with a typical threshold voltage (Vth) of 1.2 to 2.5 V. These MOSFETs are suitable for single-ended flyback or two-transistor forward topologies and find application in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Material: Silicon
- Type: N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| AUP056N08BGL | TO220 | 85 | 5.6 | 63.7 | 250 |
| AUD056N08BGL | TO252 | 85 | 5.6 | 63.7 | 250 |
| AUN050N08BGL | DFN5X6 | 85 | 5.0 | 63.7 | 250 |
| AUA056N08BGL | TO220F | 85 | 5.6 | 63.7 | 250 |
| AUB056N08BGL | TO263 | 85 | 5.6 | 63.7 | 250 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1.2 - 2.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | uA | VDS=85V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 4.9 - 5.6 | m | VGS=10V, ID=20A, Tj=25C (TO220&TO220F) |
| Drain-source on-state resistance | RDS(on) | 4.8 - 5.6 | m | VGS=10V, ID=20A, Tj=25C (TO252&TO263) |
| Drain-source on-state resistance | RDS(on) | 4.3 - 5.0 | m | VGS=10V,ID=20A, Tj=25C (DFN5X6) |
| Transconductance | GFS | 58 | S | VDS=5V IDS=20A |
| Input capacitance | Ciss | 4553 | pF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | 1215 | pF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | 107.1 | pF | VGS=0V, VDS=25V, f=1MHz |
| Gate to source charge | Qgs | 14.8 | nC | VDD=40V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 12 | nC | VDD=40V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | 63.7 | nC | VDD=40V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 38.53 | ns | VR=40V, IF=20A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 30.49 | nC | VR=40V, IF=20A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 1.38 | A | VR=40V, IF=20A, diF/dt=100A/s |
2410121530_ANHI-AUN050N08BGL_C18723005.pdf
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