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quality ASM65R280E Silicon N Channel MOSFET Ideal for Flyback and Forward Topologies in Power Supplies factory
quality ASM65R280E Silicon N Channel MOSFET Ideal for Flyback and Forward Topologies in Power Supplies factory

ASM65R280E Silicon N Channel MOSFET Ideal for Flyback and Forward Topologies in Power Supplies

Key Attributes
Model Number: ASM65R280E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
280mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.21pF@50V
Input Capacitance(Ciss):
953.8pF@50V
Pd - Power Dissipation:
126W
Gate Charge(Qg):
19.4nC@0to10V
Mfr. Part #:
ASM65R280E
Package:
DFN-8(8x8)
Product Description

Product Overview

The ASA65R280E, ASD65R280E, and ASM65R280E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode MOSFETs feature low drain-source on-resistance (RDS(ON) = 240m typ.) and easy gate switching control. They are ideal for single-ended flyback or two-transistor forward topologies in applications such as PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon N-Channel MOS
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Body diode dv/dt (V/ns)
ASA65R280E TO220F ASA65R280E 700 280 19.4 45 50
ASD65R280E TO252 ASD65R280E 700 280 19.4 45 50
ASM65R280E DFN8X8 ASM65R280E 700 280 19.4 45 50
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID 15 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse 45 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 120 mJ Tc=25,VDD=50V, Iav=4.9A, L=10mH, RG=25
Avalanche current, single pulse IAR 4.9 A Tc=25,VDD=50V, L=10mH, RG=25
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 to 20 V static
Gate source voltage (dynamic) VGS -30 to 30 V AC (f>1 Hz)
Power dissipation (TO220F) Ptot 33 W TC=25C
Power dissipation (TO252&DFN8X8) Ptot 126 W TC=25C
Storage temperature Tstg -55 to 150 C
Operating junction temperature Tj -55 to 150 C
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=58A, Tj=25C
Thermal resistance, junction - case (TO220F) RthJC 3.8 C/W
Thermal resistance, junction - ambient (TO220F) RthJA 80 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (TO252&DFN8X8) RthJC 0.99 C/W
Thermal resistance, junction - ambient (TO252&DFN8X8) RthJA 62 C/W device on PCB, minimal footprint
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.8 to 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS 1 uA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 240 to 280 m VGS=10V, ID=5.5A, Tj=25C
Gate resistance (Intrinsic) RG 4.0 f=1MHz, open drain
Input capacitance Ciss 953.8 pF VGS=0V, VDS=50V, f=1MHz
Output capacitance Coss 40.67 pF VGS=0V, VDS=50V, f=1MHz
Reverse transfer capacitance Crss 1.21 pF VGS=0V, VDS=50, f=1MHz
Turn-on delay time td(on) 7.7 ns VDD=400V,VGS=10V,ID=8A, RG=2
Rise time tr 7.5 ns VDD=400V,VGS=10V,ID=8A, RG=2
Turn-off delay time td(off) 24.44 ns VDD=400V,VGS=10V,ID=8A, RG=2
Fall time tf 8.4 ns VDD=400V,VGS=10V,ID=8A, RG=2
Gate to source charge Qgs 4.83 nC VDD=400V, ID=8A, VGS=0 to 10V
Gate to drain charge Qgd 7.08 nC VDD=400V, ID=8A, VGS=0 to 10V
Gate charge total Qg 19.4 nC VDD=400V, ID=8A, VGS=0 to 10V
Gate plateau voltage Vplateau 5.6 V VDD=400V, ID=8A, VGS=0 to 10V
Diode forward voltage VSD 0.73 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 237.7 ns VR=400V, IF=8A, diF/dt=100A/s
Reverse recovery charge Qrr 2.604 uC VR=400V, IF=8A, diF/dt=100A/s
Peak reverse recovery current Irrm 23.32 A VR=400V, IF=8A, diF/dt=100A/s

2410121513_ANHI-ASM65R280E_C22470099.pdf

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