High Speed Power Switching Silicon N Channel MOSFET ANHI AUP023N06 with Low Drain Source Resistance
Key Attributes
Model Number:
AUP023N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
290A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.3mΩ
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
185.9pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
10.843nF@30V
Pd - Power Dissipation:
310W
Gate Charge(Qg):
157.4nC
Mfr. Part #:
AUP023N06
Package:
TO-220
Product Description
Product Overview
The AUP023N06 is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features a low drain-source on-resistance of 1.9m (typ.), enhanced body diode dv/dt capability, and superior avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors.
Product Attributes
- Brand: AUP
- Model: AUP023N06
- Technology: Silicon N-Channel MOS
- Package: TO220
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 - 4.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - - 1 | uA | VDS=60V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - - +/-100 | nA | VGS=+/-20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 1.9 2.3 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - 2.2 - | f=1MHz, open drain | |
| Transconductance | Gfs | 139.2 | S | VDS=5V, ID=50A |
| Continuous drain current at silicon | ID | - - 290 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Continuous drain current at package | ID | - - 255 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Continuous drain current at silicon | ID | 205 | A | TC=100C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - - 870 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - - 870 | mJ | Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - - 59 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation | Ptot | - - 310 | W | TC=25C |
| Storage temperature | Tstg | -55 - 175 | C | |
| Operating junction temperature | Tj | -55 - 175 | C | |
| Soldering Temperature | TL | 300 | C | Distance of 1.6mm from case for 10s |
| Thermal resistance, junction - case | RthJC | - - 0.48 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - - 60 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 10843 - | pF | VGS=0V, VDS=30V, f=1MHz |
| Output capacitance | Coss | - 3631 - | pF | VGS=0V, VDS=30V, f=1MHz |
| Reverse transfer capacitance | Crss | - 185.9 - | pF | VGS=0V, VDS=30V, f=1MHz |
| Turn-on delay time | td(on) | - 21 - | ns | VDD=30V,VGS=10V,ID=20A, RG=2.5 |
| Rise time | tr | - 49 - | ns | VDD=30V,VGS=10V,ID=20A, RG=2.5 |
| Turn-off delay time | td(off) | - 90.2 - | ns | VDD=30V,VGS=10V,ID=20A, RG=2.5 |
| Fall time | tf | - 58 - | ns | VDD=30V,VGS=10V,ID=20A, RG=2.5 |
| Gate to source charge | Qgs | - 42.9 - | nC | VDD=30V, ID=20A, VGS=10V |
| Gate to drain charge | Qgd | - 30.5 - | nC | VDD=30V, ID=20A, VGS=10V |
| Gate charge total | Qg | - 157.4 - | nC | VDD=30V, ID=20A, VGS=10V |
| Diode forward voltage | VSD | - 0.67 1.2 | V | VGS=0V, Is=1A, Tj=25C |
| Reverse recovery time | trr | - 128.9 - | ns | Vgs=0V, IF=20A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 252.9 - | nC | Vgs=0V, IF=20A, diF/dt=100A/s |
| Peak Reverse Recovery Current | Irrm | - 3.3 - | A | Vgs=0V, IF=20A, diF/dt=100A/s |
2410121610_ANHI-AUP023N06_C7494989.pdf
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