Power Switching Silicon MOSFET AUB045N12 with Enhanced Avalanche Ruggedness and Low RDS on Resistance
Key Attributes
Model Number:
AUB045N12
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
169A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
47pF
Number:
1 N-channel
Output Capacitance(Coss):
654pF
Pd - Power Dissipation:
310W
Input Capacitance(Ciss):
11.701nF
Gate Charge(Qg):
178.1nC@10V
Mfr. Part #:
AUB045N12
Package:
TO-263
Product Description
Product Overview
The AUP045N12 and AUB045N12 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They feature low drain-source on-resistance (RDS(on) = 4.1m typ.), enhanced body diode dv/dt capability, and improved avalanche ruggedness. These MOSFETs are ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors.
Product Attributes
- Type: Silicon N-Channel MOS
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| AUP045N12 | TO220 | AUP045N12 | 120 | 4.5 | 178.1 | 490 |
| AUB045N12 | TO263 | AUB045N12 | 120 | 4.5 | 178.1 | 490 |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current at silicon | ID | - | A | TC=25C, Limited by Tj,max |
| Continuous drain current at silicon | ID | 119 | A | TC=100C, Limited by Tj,max |
| Continuous drain current at package | ID | -152 | A | TC=25C, Limited by Tj,max |
| Pulsed drain current | ID,pulse | -490 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | -635 | mJ | Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | -50.4 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Power dissipation | Ptot | -310 | W | TC=25C |
| Storage temperature | Tstg | -55 to 175 | C | |
| Operating junction temperature | Tj | -55 to 175 | C | |
| Soldering Temperature | TL | 300 | C | Distance of 1.6mm from case for 10s |
| Thermal resistance, junction - case | RthJC | -0.48 | C/W | |
| Thermal resistance, junction - ambient | RthJA | -62 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 120 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 to 4.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | -1 | uA | VDS=120V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | -100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 4.1 to 4.5 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 2.0 | f=1MHz, open drain | |
| Transconductance | Gfs | 115.8 | S | VDS=5V, ID=50A |
| Input capacitance | Ciss | -11701 | pF | VGS=0V, VDS=60V, f=1MHz |
| Output capacitance | Coss | -654 | pF | VGS=0V, VDS=60V, f=1MHz |
| Reverse transfer capacitance | Crss | -47 | pF | VGS=0V, VDS=60V, f=1MHz |
| Turn-on delay time | td(on) | -22 | ns | VDD=60V,VGS=10V,ID=50A, RG=2.5 |
| Rise time | tr | -101 | ns | VDD=60V,VGS=10V,ID=50A, RG=2.5 |
| Turn-off delay time | td(off) | -96 | ns | VDD=60V,VGS=10V,ID=50A, RG=2.5 |
| Fall time | tf | -67 | ns | VDD=60V,VGS=10V,ID=50A, RG=2.5 |
| Gate to source charge | Qgs | -45.5 | nC | VDD=60V, ID=20A, VGS=10V |
| Gate to drain charge | Qgd | -50.0 | nC | VDD=60V, ID=20A, VGS=10V |
| Gate charge total | Qg | -178.1 | nC | VDD=60V, ID=20A, VGS=10V |
| Continuous Source Current at silicon | ISD | -169 | A | |
| Diode forward voltage | VSD | -1.2 | V | VGS=0V, Is=1A, Tj=25C |
| Reverse recovery time | trr | -117.7 | ns | Vgs=0V, IF=50A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | -433.8 | nC | Vgs=0V, IF=50A, diF/dt=100A/s |
| Peak Reverse Recovery Current | Irrm | -5.48 | A | Vgs=0V, IF=50A, diF/dt=100A/s |
2410121605_ANHI-AUB045N12_C18722990.pdf
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