fast switching diode amsem BAS316M3 with compact SOD323F Micro SMD package and matte tin lead finish

Key Attributes
Model Number: BAS316M3
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
2 Independent
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS316M3
Package:
SOD-323F
Product Description

Product Overview

The BAS316M3 is a general-purpose, fast switching diode designed for various electronic applications. It features a compact SOD323F Micro SMD package and is RoHS compliant and Green EMC certified. The device offers reliable performance with matte tin lead finishing.

Product Attributes

  • Brand: Anhui Anmei Semiconductor Co.,Ltd.
  • Package: SOD323F Micro SMD
  • Certifications: RoHS compliant, Green EMC
  • Lead Finish: Matte Tin (Sn)
  • Marking: Cathode Band / Device marking
  • Device Marking Code: BAS316M3

Technical Specifications

SymbolParameterTest ConditionsMinMaxUnits
VRRMRepetitive Peak Reverse Voltage100V
IF(AV)Forward Current250mA
IFRMNon-Repetitive Peak Forward Surge CurrentPulse Width=1us4.0A
IFRMNon-Repetitive Peak Forward Surge CurrentPulse Width=1ms1.0A
PDPower Dissipation250mW
TJJunction Temperature150
TSTGStorage Temperature-65to 150
VFForward VoltageIF=1.0mA0.715V
VFForward VoltageIF=10mA0.855V
VFForward VoltageIF=50mA1.000V
VFForward VoltageIF=150mA1.250V
IRReverse CurrentVR=20V0.03uA
IRReverse CurrentVR=75V1.00uA
VRReverse VoltageIR =100A100V
CJJunction Capacitance1MHz, VR =0V1.5pF
trrReverse Recovery TimeIF =10mA, IR =10mA, Irr =0.1x IR4.0ns

2409302201_amsem-BAS316M3_C7528894.pdf

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