ASDsemi ASDM100R045NQ-R 100V N Channel MOSFET designed for synchronous rectification and high frequency
Key Attributes
Model Number:
ASDM100R045NQ-R
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
118A
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Output Capacitance(Coss):
654pF
Input Capacitance(Ciss):
4.117nF
Pd - Power Dissipation:
73W
Gate Charge(Qg):
78nC
Mfr. Part #:
ASDM100R045NQ-R
Package:
PDFN-8(5x6)
Product Description
Product Overview
The ASDM100R045NQ is a 100V N-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(on). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. The MOSFET is housed in an excellent package for effective heat dissipation and is optimized for synchronous rectification. Its applications include automotive systems, hard-switched and high-frequency circuits, BLDC motor drives, and battery-powered devices.
Product Attributes
- Brand: ShenZhen Ascend Semiconductor Incorporated
- Product Line: ASDM
- Channel Type: N-Channel
- Package Type: PDFN5*6-8
- Ordering Code: ASDM100R045NQ-R
- Marking: 100R045N
- Packing: Tape & Reel, 4000/Reel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| RDS(on), Typ @ VGS=10 V | 3.4 | m | ||||
| ID | 118 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TJ=25C unless otherwise noted | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | TC=25C | 118 | A | ||
| Drain Current-Continuous | ID | TC=100C | 62 | A | ||
| Drain Current-Pulsed Note 1 | IDM | TC=25C | 472 | A | ||
| Avalanche Current | IAR | 34 | A | |||
| Single Pulse Avalanche Energy Note 3 | EAS | 29 | mJ | |||
| Maximum Power Dissipation | PD | TC=25C | 73 | W | ||
| Operating Junction Temperature Range | TJ | 150 | C | |||
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient | RJA | Steady State, Note 2 | - | 54.5 | - | C/W |
| Junction-to-Case | RJC | Steady State | - | 1.7 | - | C/W |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, IDS=1mA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V, TJ=25C | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V, TJ=125C | - | - | 100 | A |
| Gate-Body Leakage | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, IDS=250A | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, IDS=50A | - | 3.4 | 4.5 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, IDS=20A | - | 4.6 | 6.5 | m |
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | - | 1.2 | - | |
| Forward Transconductance | gfs | VDS=5V, IDS=20A | - | 43.0 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 4117 | - | pF |
| Output Capacitance | Coss | VDS=50V, VGS=0V, f=1MHz | - | 654 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, f=1MHz | - | 44 | - | pF |
| Turn-On Delay Time | td(on) | VDS=50V, VGS=10V, IDS=45A, RGEN=3.6 | - | 13.7 | - | ns |
| Rise Time | tr | VDS=50V, VGS=10V, IDS=45A, RGEN=3.6 | - | 36.0 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=50V, VGS=10V, IDS=45A, RGEN=3.6 | - | 54.4 | - | ns |
| Fall Time | tf | VDS=50V, VGS=10V, IDS=45A, RGEN=3.6 | - | 40.3 | - | ns |
| Gate Charge Characteristics | ||||||
| Gate to Source Gate Charge | Qgs | VDD=50V, ID=30A | - | 14.6 | - | nC |
| Gate charge at threshold | Qg(th) | VDD=50V, ID=30A | - | 8.0 | - | nC |
| Gate to Drain Charge | Qgd | VDD=50V, ID=30A | - | 21.4 | - | nC |
| Switching charge | QSW | VDD=50V, ID=30A | - | 28 | - | nC |
| Gate charge total | Qg | VDD=50V, ID=30A, VGS=0 to 10V | - | 78 | - | nC |
| Gate plateau voltage | Vplateau | VDD=50V | - | 3.6 | - | V |
| Gate charge total, sync. FET (Qg-Qgd) | Qg(sync) | VDS=0.1V | - | 56.6 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IF=20A | - | 0.8 | 1.3 | V |
| Body Diode Reverse Recovery Time | trr | VDD=50V, IF=20A, di/dt=100A/s | - | 52 | - | ns |
| Body Diode Reverse Recovery Time | trr | VDD=50V, IF=20A, di/dt=200A/s | - | 46.4 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | VDD=50V, IF=20A, di/dt=100A/s | - | 70.6 | - | nC |
| Body Diode Reverse Recovery Charge | Qrr | VDD=50V, IF=20A, di/dt=200A/s | - | 131.8 | - | nC |
| Reverse Recovery Current | IRRM | VDD=50V, IF=20A, di/dt=100A/s | - | 2.4 | - | A |
| Reverse Recovery Current | IRRM | VDD=50V, IF=20A, di/dt=200A/s | - | 4.9 | - | A |
2511041536_ASDsemi-ASDM100R045NQ-R_C2972856.pdf
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