load switch ANHI AUP065N10 N Channel Silicon MOSFET with fast recovery diode and low gate charge design
Key Attributes
Model Number:
AUP065N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
76A
RDS(on):
11mΩ@4.5V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
1 N-channel
Output Capacitance(Coss):
1.13nF
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
3.729nF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
AUP065N10
Package:
TO-220
Product Description
Product Overview
The AUN065N10 and AUP065N10 are N-Channel Silicon MOSFETs designed for applications requiring efficient power management. Leveraging proprietary new trench technology, these MOSFETs offer a fast recovery body diode and low gate charge, contributing to minimized switching losses. They are ideal for synchronous rectification, general power management, and load switch applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Package | VDS @ Tj,max | RDS(on),max | Qg,typ | ID,pulse |
|---|---|---|---|---|---|
| AUN065N10 | DFN5X6 | 100 V | 6.5 m | 67 nC | 304 A |
| AUP065N10 | TO220 | 100 V | 6.5 m | 67 nC | 304 A |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | - | A | TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50 |
| 76 | A | TC=25C | ||
| Pulsed drain current | ID,pulse | 304 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 84 | mJ | - |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Power dissipation (DFN5X6) | Ptot | 91 | W | TC=25C |
| Power dissipation (TO220) | Ptot | 160 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | - |
| Operating junction temperature | Tj | -55 to 150 | C | - |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Thermal resistance, junction - case (TO220) | RthJC | 0.8 | C/W | - |
| Thermal resistance, junction - ambient (TO220) | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (DFN5X6) | RthJC | 1.4 | C/W | - |
| Thermal resistance, junction - ambient (DFN5X6) | RthJA | 63 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1 to 3 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 5.8 to 6.5 | m | VGS=10V, ID=20A, Tj=25C |
| 7.9 to 11 | m | VGS=4.5V, ID=20A, Tj=25C | ||
| Input capacitance | Ciss | 3729 | pF | Vds=30V,Vgs=0V, f=1MHz |
| Output capacitance | Coss | 1130 | pF | Vds=30V,Vgs=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 64 | pF | Vds=30V,Vgs=0V, f=1MHz |
| Turn-on delay time | td(on) | 25 | ns | VDD=50V,VGS=10V,RG=6, ID=20A |
| Rise time | tr | 47 | ns | VDD=50V,VGS=10V,RG=6, ID=20A |
| Turn-off delay time | td(off) | 64 | ns | VDD=50V,VGS=10V,RG=6, ID=20A |
| Fall time | tf | 23 | ns | VDD=50V,VGS=10V,RG=6, ID=20A |
| Gate to source charge | Qgs | 13 | nC | VDS=50V,VGS=0 to 10V, ID=20A |
| Gate to drain charge | Qg d | 14 | nC | VDS=50V,VGS=0 to 10V, ID=20A |
| Gate charge total | Qg | 67 | nC | VDS=50V,VGS=0 to 10V, ID=20A |
| Diode forward voltage | VSD | 1.0 | V | VGS=0V, IF=1A, Tj=25C |
2410121452_ANHI-AUP065N10_C18722995.pdf
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