ASW65R041EFDA Silicon N Channel MOSFET Suitable for Phase Shift Bridge LLC Half Bridge Applications
Key Attributes
Model Number:
ASW65R041EFDA
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
41mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
12.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
7.356nF@50V
Pd - Power Dissipation:
500W
Gate Charge(Qg):
290.6nC
Mfr. Part #:
ASW65R041EFDA
Package:
TO-247
Product Description
Product Overview
The ASW65R041EFDA is a Silicon N-Channel MOSFET designed for soft switching boost PFC and full bridge topologies. It is ideal for applications such as phase-shift-bridge (ZVS), LLC half bridge, AHB, and LLC half bridge, commonly found in Telecom Power, EV Charging, Solar applications, and Server Power. This MOSFET features low drain-source on-resistance (RDS(on) = 0.035 typ.), easy gate control, and operates in enhancement mode with a threshold voltage (Vth) of 3 to 5 V. Its robust design and high performance make it suitable for demanding power electronics applications.
Product Attributes
- Brand: Not explicitly mentioned, but part number suggests a manufacturer.
- Package: TO247
- Marking: ASW65R041EFDA
- Mode: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Part Name | - | ASW65R041EFDA | - | - |
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.035 - 0.041 | VGS=10V, ID=28A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 13 | f=1MHz, open drain | |
| Continuous drain current | ID | - 80 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 240 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 16000 | mJ | Tc=25,VDD=50V,L = 20mH, RG=25 |
| Avalanche current, single pulse | IAR | - 10 | A | Tc=25,VDD=50V,L = 20mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 26 | V/ns | VDS=0...150V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 500 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Reverse diode dv/dt | dv/dt | - 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - 0.205 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 7356 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 436 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 12.1 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 63.7 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Rise time | tr | - 28.4 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Turn-off delay time | td(off) | - 270 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Fall time | tf | - 24.1 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Gate to source charge | Qgs | - 46.1 | nC | VDD =480V, ID =49.6A, VGS =10V |
| Gate to drain charge | Qgd | - 151.3 | nC | VDD =480V, ID =49.6A, VGS =10V |
| Gate charge total | Qg | - 290.6 | nC | VDD =480V, ID =49.6A, VGS =10V |
| Gate plateau voltage | Vplateau | - 7.8 | V | VDD =480V, ID =49.6A, VGS =10V |
| Diode forward voltage | VSD | - 0.61 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 193.5 | ns | Vr=400v,IF=49.6A,di/dt=100A/us |
| Reverse recovery charge | Qrr | - 1.67 | uC | Vr=400v,IF=49.6A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | - 14.5 | A | Vr=400v,IF=49.6A,di/dt=100A/us |
2410121620_ANHI-ASW65R041EFDA_C5440017.pdf
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