Silicon N Channel MOSFET AUD060N055 Designed for Power Conversion and Low On Resistance Performance
Key Attributes
Model Number:
AUD060N055
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
125A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
124.3pF
Number:
1 N-channel
Output Capacitance(Coss):
1.416nF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
3.803nF
Gate Charge(Qg):
53.5nC@10V
Mfr. Part #:
AUD060N055
Package:
TO-252
Product Description
Product Overview
The AUD060N055, AUN042N055, AUB050N055, and AUP060N055 are N-Channel Silicon MOSFETs designed for high-efficiency power conversion applications. These enhancement-mode devices feature low drain-source on-resistance and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Certifications: Not specified
Technical Specifications
Key Performance Parameters
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max TO252 (m) | RDS(on),max DFN5X6 (m) | RDS(on),max TO263&TO220 (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|---|
| AUD060N055 | TO252 | AUD060N055 | 55 | 6.0 | - | - | 53.5 | 280 |
| AUN042N055 | DFN5X6 | AUN042N055 | 55 | - | 4.2 | - | 53.5 | 280 |
| AUB050N055 | TO263 | AUB050N055 | 55 | - | - | 6.0 | 53.5 | 280 |
| AUP060N055 | TO220 | AUP060N055 | 55 | - | - | 6.0 | 53.5 | 280 |
Maximum Ratings
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | 125 | A | TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 280 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 331 | mJ | Tc=25,VDD=50V, Id=36.4A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | 36.4 | A | Tc=25,VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | 20 | V | static |
| Power dissipation (TO220,263,T252) | Ptot | 120 | W | TC=25C |
| Power dissipation (DFN5x6) | Ptot | 74 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | - |
| Operating junction temperature | Tj | -55 to 150 | C | - |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Transconductance | GFS | 71 | S | VDS=5V, IDS=20A |
Thermal Characteristics
| Package Type | Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|---|
| TO252, TO263, TO220 | Thermal resistance, junction - case | RthJC | 1 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint | |
| DFN5X6 | Thermal resistance, junction - case | RthJC | 1.3 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 50 | C/W | device on PCB, minimal footprint |
Electrical Characteristics
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 55 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 to 4.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=55V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 4 to 6.0 | m | VGS=10V, ID=20A, Tj=25C (TO252) |
| Drain-source on-state resistance | RDS(on) | 3.6 to 4.2 | m | VGS=10V, ID=20A, Tj=25C (DFN5X6) |
| Drain-source on-state resistance | RDS(on) | 4.3 to 6.0 | m | VGS=10V, ID=20A, Tj=25C (TO263&TO220) |
| Gate resistance (Intrinsic) | RG | 1.2 | f=1MHz, open drain |
Dynamic Characteristics
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Input capacitance | Ciss | 3803 | pF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | 1416 | pF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | 124.3 | pF | VGS=0V, VDS=25V, f=1MHz |
| Turn-on delay time | td(on) | 21 | ns | VDD=30V,VGS=10V,ID=2A, RG=2.5 |
| Rise time | tr | 9 | ns | VDD=30V,VGS=10V,ID=2A, RG=2.5 |
| Turn-off delay time | td(off) | 42 | ns | VDD=30V,VGS=10V,ID=2A, RG=2.5 |
| Fall time | tf | 78 | ns | VDD=30V,VGS=10V,ID=2A, RG=2.5 |
Gate Charge Characteristics
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Gate to source charge | Qgs | 16.5 | nC | VDD=30V, ID=30A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 12.6 | nC | VDD=30V, ID=30A, VGS=0 to 10V |
| Gate charge total | Qg | 53.5 | nC | VDD=30V, ID=30A, VGS=0 to 10V |
Reverse Diode Characteristics
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Diode forward voltage | VSD | 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 49 | ns | VR=40V, IF=75A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 52 | nC | VR=40V, IF=75A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 1.5 | A | VR=40V, IF=75A, diF/dt=100A/s |
2410121921_ANHI-AUD060N055_C18723004.pdf
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