30V N Channel MOSFET SOT 23 Package Featuring ASDsemi ASDM3400ZA R Trench Power LV MOSFET Technology
Key Attributes
Model Number:
ASDM3400ZA-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
99pF
Input Capacitance(Ciss):
823pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
17.25nC@10V
Mfr. Part #:
ASDM3400ZA-R
Package:
SOT-23
Product Description
Product Overview
The ASDM3400ZA is a 30V N-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for applications such as battery protection, load switching, and power management. This MOSFET is supplied in a SOT-23 package.
Product Attributes
- Brand: ShenZhen Ascend Semiconductor Incorporated
- Technology: Trench Power LV MOSFET
- Package: SOT-23
- Origin: China (implied by Shenzhen)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current (TA=25) | ID | 5.6 | A | |||
| Drain Current (TA=70) | ID | 4.5 | A | |||
| Pulsed Drain Current | IDM | 23 | A | |||
| Total Power Dissipation (TA=25) | PD | 1.2 | W | |||
| Total Power Dissipation (TA=70) | PD | 0.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Static Parameter (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS=±12V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.65 | 0.9 | 1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.6A | 20 | 25 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | 23 | 31 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=3A | 27 | 45 | m | |
| Diode Forward Voltage | VSD | IS=5.6A,VGS=0V | 1.2 | V | ||
| Dynamic Parameters (TJ=25 unless otherwise noted) | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 630 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 55 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 71 | pF | ||
| Switching Parameters (TJ=25 unless otherwise noted) | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=15V,ID=5.6A | 17.25 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=15V,ID=5.6A | 2.1 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V,VDS=15V,ID=5.6A | nC | |||
| Reverse Recovery Charge | Qrr | IF=5.6A, di/dt=100A/us | 1.1 | nC | ||
| Reverse Recovery Time | trr | IF=5.6A, di/dt=100A/us | 13.1 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDS=15V, ID=5.6A, RGEN=3 | 4.4 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDS=15V, ID=5.6A, RGEN=3 | 28.2 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V, VDS=15V, ID=5.6A, RGEN=3 | 16.2 | ns | ||
| Turn-off Fall Time | tf | VGS=10V, VDS=15V, ID=5.6A, RGEN=3 | 26 | ns | ||
| Ordering and Marking Information | ||||||
| Device No. | Marking | Package | Packing Quantity | |||
| ASDM3400ZA-R | A09T | SOT-23 | 3000/Reel | |||
Note: Pulse Test: Pulse Width≤300s, Duty cycle ≤2%.
Note: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. Maximum rating presented is based on mounting on a 1 in² pad of 2oz copper.
2506201454_ASDsemi-ASDM3400ZA-R_C2758231.pdf
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