Silicon Carbide Power MOSFET ADR065N028AH 650V N Channel 42m Ohm On Resistance for Power Electronics
Key Attributes
Model Number:
ADR065N028AH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.9pF
Output Capacitance(Coss):
226.7pF
Input Capacitance(Ciss):
2.333nF
Pd - Power Dissipation:
294W
Gate Charge(Qg):
97.6nC
Mfr. Part #:
ADR065N028AH
Package:
TOLL
Product Description
Product Overview
The ADQ065N028AH, ADW065N028AH, and ADR065N028AH are 650V N-Channel Silicon Carbide Power MOSFETs designed for high-performance power electronics applications. These devices offer a low drain-source on-resistance of 30m (typ.) and are easy to control with a gate switching enhancement mode. Key applications include asymmetrical bridge converters, inverters, and single-switch forward and flyback converters.
Product Attributes
- Material: Silicon Carbide (SiC)
- Channel Type: N-Channel
- Mode: Enhancement mode
Technical Specifications
| Part Name | Package Marking | Package Type | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ADQ065N028AH | ADQ065N028AH | TO-247-4L | 650 | 42 | 97.6 | 250 |
| ADW065N028AH | ADW065N028AH | TO-247-3L | 650 | 42 | 97.6 | 250 |
| ADR065N028AH | ADR065N028AH | TOLL | 650 | 42 | 97.6 | 250 |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 | - | - | V | VGS=0V, ID=100uA |
| Gate threshold voltage | V(GS)th | 2.2 | 2.8 | 5.0 | V | VDS=VGS, ID=5mA |
| Zero gate voltage drain current | IDSS | - | - | 100 | uA | VDS=650V, VGS=0V |
| Gate-source leakage current | IGSS+ | - | - | 250 | nA | VGS=20V, VDS=0V |
| Gate-source leakage current | IGSS- | - | - | -100 | nA | VGS=-5V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 30 | 45 | m | VGS=18V, ID=30A, Tj=25C |
| Drain-source on-state resistance | RDS(on) | - | 33 | - | m | VGS=18V, ID=30A, Tj=150C |
| Gate resistance (Intrinsic) | RG | - | 5.1 | - | f=1MHz, open drain | |
| Continuous drain current | ID | - | - | 80 | A | TC=25C, Limited by Tj,max |
| Continuous drain current | ID | - | - | 58 | A | TC=100C, Limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 605 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Gate source voltage (dynamic) | VGS | -5 | - | 20 | V | Absolute maximum values |
| Gate source voltage (static) | VGS | -4 | - | 18 | V | Recommended operational values |
| Power dissipation | Ptot | - | - | 294 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 175 | C | - |
| Operating junction temperature | Tj | -55 | - | 175 | C | - |
| Soldering Temperature | TL | - | 260 | - | C | Distance of 1.6mm from case for 10s |
| Transconductance | GFS | - | 20.9 | 21.6 | S | VDS=20V, IDS=33.5A, Tj=175C |
| Thermal resistance, junction - case | RthJC | - | 0.51 | 0.7 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - | 2333 | - | pF | VGS=0V, VDS=400V, f=1MHz |
| Output capacitance | Coss | - | 226.7 | - | pF | VGS=0V, VDS=400V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 12.9 | - | pF | VGS=0V, VDS=400V, f=1MHz |
| Turn-on delay time | td(on) | - | 11.5 | - | ns | VDD=400V, ID=33.5A,RG=2.5; TJ =25, VGS=-4/18V, L=59uH |
| Rise time | tr | - | 17.5 | - | ns | VDD=400V, ID=33.5A,RG=2.5; TJ =25, VGS=-4/18V, L=59uH |
| Turn-off delay time | td(off) | - | 32.5 | - | ns | VDD=400V, ID=33.5A,RG=2.5; TJ =25, VGS=-4/18V, L=59uH |
| Fall time | tf | - | 8.6 | - | ns | VDD=400V, ID=33.5A,RG=2.5; TJ =25, VGS=-4/18V, L=59uH |
| Turn-on Switching Energy | Eon | - | 71.2 | - | uJ | VDD=400V, ID=33.5A,RG=2.5; TJ =25, VGS=-4/18V, L=59uH |
| Turn-off Switching Energy | Eoff | - | 83.9 | - | uJ | VDD=400V, ID=33.5A,RG=2.5; TJ =25, VGS=-4/18V, L=59uH |
| Gate to source charge | Qgs | - | 28.2 | - | nC | VDD=400V, ID=33.5A, VGS=-4/18V |
| Gate to drain charge | Qgd | - | 26.1 | - | nC | VDD=400V, ID=33.5A, VGS=-4/18V |
| Gate charge total | Qg | - | 97.6 | - | nC | VDD=400V, ID=33.5A, VGS=-4/18V |
| Continuous Source Current | ISD | - | - | 80 | A | - |
| Diode forward voltage | VSD | - | 3.75 | - | V | IS =20A, VGS=-4V, Tj=25C |
| Reverse recovery time | trr | - | 19.52 | - | ns | VGS=-4V, ISD=33.5A, VR=400 V dif/dt =1630A/s, TJ=25 C |
| Reverse recovery charge | Qrr | - | 230 | - | nC | VGS=-4V, ISD=33.5A, VR=400 V dif/dt =1630A/s, TJ=25 C |
| Peak reverse recovery current | Irrm | - | 20.44 | - | A | VGS=-4V, ISD=33.5A, VR=400 V dif/dt =1630A/s, TJ=25 C |
| Reverse recovery time | trr | - | 15.04 | - | ns | VGS=-4V, ISD=33.5A, VR=400 V dif/dt =5665A/s, TJ=25 C |
| Reverse recovery charge | Qrr | - | 400 | - | nC | VGS=-4V, ISD=33.5A, VR=400 V dif/dt =5665A/s, TJ=25 C |
| Peak reverse recovery current | Irrm | - | 46.46 | - | A | VGS=-4V, ISD=33.5A, VR=400 V dif/dt =5665A/s, TJ=25 C |
2410121501_ANHI-ADR065N028AH_C22470093.pdf
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