Power Supply Component Silicon N Channel MOSFET AUN063N10 Featuring Enhancement Mode Gate Switching
Key Attributes
Model Number:
AUN063N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
123A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.3mΩ
Gate Threshold Voltage (Vgs(th)):
2.9V
Reverse Transfer Capacitance (Crss@Vds):
14.6pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
151W
Input Capacitance(Ciss):
3.68nF@50V
Gate Charge(Qg):
60.7nC
Mfr. Part #:
AUN063N10
Package:
DFN5x6-8
Product Description
Product Overview
The AUN063N10 is a Silicon N-Channel MOS Field-Effect Transistor designed for efficient power management applications. It features a low drain-source on-resistance (RDS(ON) = 5.5m typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is ideal for single-ended flyback or two-transistor forward topologies, finding common use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting solutions.
Product Attributes
- Brand: AUN
- Part Number: AUN063N10
- Package Type: DFN5X6
- Technology: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA | |
| Gate threshold voltage | V(GS)th | 2.4 - 3.4 | V | VDS=VGS, ID=250uA | |
| Zero gate voltage drain current | IDSS | - | uA | VDS=95V, VGS=0V, Tj=25C | |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V | |
| Drain-source on-state resistance | RDS(on) | 5.5 - 6.3 | m | VGS=10V, ID=20A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 1 | f=1MHz, open drain | ||
| Continuous drain current | ID | - 123 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 | |
| Pulsed drain current | ID,pulse | - - 396 | A | TC=25C, Pulse width tp limited by Tj,max | |
| Avalanche energy, single pulse | EAS | - - 240 | mJ | Tc=25, VDD=50V, I=31A, L=0.5mH, RG=25 | |
| Avalanche current, single pulse | IAR | - - 31 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 | |
| Gate source voltage (static) | VGS | -20 - 20 | V | static | |
| Power dissipation | Ptot | - - 151 | W | TC=25C | |
| Storage temperature | Tstg | -55 - 150 | C | - | |
| Operating junction temperature | Tj | -55 - 150 | C | - | |
| Transconductance | GFS | 51 | - | S | VDS=5V IDS=20A |
| Thermal resistance, junction - case | RthJC | - - 1.3 | C/W | - | |
| Thermal resistance, junction - ambient | RthJA | - - 50 | C/W | device on PCB, minimal footprint | |
| Input capacitance | Ciss | - 3680 - | pF | VGS=0V, VDS=50V, f=1MHz | |
| Output capacitance | Coss | - 361 - | pF | VGS=0V, VDS=50V, f=1MHz | |
| Reverse transfer capacitance | Crss | - 14.6 - | pF | VGS=0V, VDS=50V, f=1MHz | |
| Turn-on delay time | td(on) | - 29 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 | |
| Rise time | tr | - 55 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 | |
| Turn-off delay time | td(off) | - 69 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 | |
| Fall time | tf | - 43 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 | |
| Gate to source charge | Qgs | - 15.5 - | nC | VDD=50V, ID=20A, VGS=0 to 10V | |
| Gate to drain charge | Qgd | - 17.6 - | nC | VDD=50V, ID=20A, VGS=0 to 10V | |
| Gate charge total | Qg | - 60.7 - | nC | VDD=50V, ID=20A, VGS=0 to 10V | |
| Diode forward voltage | VSD | - 0.7 - | V | VGS=0V, IF=1A, Tj=25C | |
| Reverse recovery time | trr | - 45 - | ns | VR=30V, IF=20A, diF/dt=300A/s | |
| Reverse recovery charge | Qrr | - 212 - | nC | VR=30V, IF=20A, diF/dt=300A/s | |
| Peak reverse recovery current | Irrm | - 8.4 - | A | VR=30V, IF=20A, diF/dt=300A/s |
2410121525_ANHI-AUN063N10_C5440031.pdf
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