N Channel Silicon MOSFET ANHI ASB80R750E TO263 Package for LED Lighting and Power Supply Applications
Key Attributes
Model Number:
ASB80R750E
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
8.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.92pF
Number:
1 N-channel
Output Capacitance(Coss):
34.4pF
Input Capacitance(Ciss):
850.8pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
18.5nC@10V
Mfr. Part #:
ASB80R750E
Package:
TO-263
Product Description
Product Overview
The ASA80R750E, ASD80R750E, and ASB80R750E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 620m typ.) and easy gate control. They are ideal for applications such as single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting systems.
Product Attributes
- Type: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Key Performance Parameters | |||||||
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|---|
| ASA80R750E | TO220F | ASA80R750E | 850 | 750 | 18.5 | 35 | 50 |
| ASD80R750E | TO252 | ASD80R750E | 850 | 750 | 18.5 | 35 | 50 |
| ASB80R750E | TO263 | ASB80R750E | 850 | 750 | 18.5 | 35 | 50 |
| Maximum Ratings (at Tj = 25C, unless otherwise specified) | |||||
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Continuous drain current | ID | 8.5 | A | TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50 | |
| Pulsed drain current | ID,pulse | 35 | A | TC=25C, Pulse width tp limited by Tj,max | |
| Avalanche energy, single pulse | EAS | 88 | mJ | Tc=25,VDD=50V, Iav=4.2A, L=10mH, RG=25 | |
| Avalanche current, single pulse | IAR | 4.2 | A | Tc=25,VDD=50V, L=10mH, RG=25 | |
| Gate source voltage (static) | VGS | -30 to 30 | V | static | |
| Power dissipation (TO220F) | Ptot | 43 | W | TC=25C | |
| Power dissipation (TO252&263) | Ptot | 150 | W | TC=25C | |
| Storage temperature | Tstg | -55 to 150 | C | - | |
| Operating junction temperature | Tj | -55 to 150 | C | - | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s | |
| Reverse diode dv/dt | dv/dt | 4 | V/ns | VDS=0...400V, ISD<=8A, Tj=25C | |
| Thermal Characteristics (TO220F) | ||||
| Parameter | Symbol | Value | Unit | Note/Test Condition |
|---|---|---|---|---|
| Thermal resistance, junction -case | RthJC | 3.26 | C/W | - |
| Thermal resistance, junction -ambient | RthJA | 76 | C/W | Device on PCB, minimal footprint |
| Thermal Characteristics (TO252&263) | ||||
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | 1.1 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Electrical Characteristics (at Tj=25C, unless otherwise specified) | |||||
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS=0V, ID=250uA | |
| Gate threshold voltage | V(GS)th | 2.8 to 4.2 | V | VDS=VGS, ID=250uA | |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=800V, VGS=0V, Tj=25C | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V | |
| Drain-source on-state resistance | RDS(on) | 620 to 750 | m | VGS=10V, ID=6A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 25 | f=1MHz, open drain | ||
| Dynamic Characteristics | ||||
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Input capacitance | Ciss | 850.8 | pF | VGS=0V, VDS=100V, f=1MHz |
| Output capacitance | Coss | 34.4 | pF | VGS=0V, VDS=100V, f=1MHz |
| Reverse transfer capacitance | Crss | 0.92 | pF | VGS=0V, VDS=100V, f=1MHz |
| Turn-on delay time | td(on) | 40.6 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50 |
| Rise time | tr | 34.8 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50 |
| Turn-off delay time | td(off) | 128 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50 |
| Fall time | tf | 31 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50 |
| Gate Charge Characteristics | ||||
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Gate to source charge | Qgs | 5.0 | nC | VDD=400V, ID=4.1A, VGS=0 to 10V |
| Gate to drain charge | Qg d | 6.6 | nC | VDD=400V, ID=4.1A, VGS=0 to 10V |
| Gate charge total | Qg | 18.5 | nC | VDD=400V, ID=4.1A, VGS=0 to 10V |
| Reverse Diode Characteristics | ||||
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Diode forward voltage | VSD | 0.75 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 266.5 | ns | VR=400V, IF=4.1A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 2.2 | uC | VR=400V, IF=4.1A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 14 | A | VR=400V, IF=4.1A, diF/dt=100A/s |
2410121521_ANHI-ASB80R750E_C18723002.pdf
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