650V 3A Silicon Carbide Schottky Diode Bestirpower BCH65S03D4 for Operation in UPS and Solar Inverters
Key Attributes
Model Number:
BCH65S03D4
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
32A
Reverse Leakage Current (Ir):
500nA@650V
Diode Configuration:
-
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.51V@3A
Current - Rectified:
3A
Mfr. Part #:
BCH65S03D4
Package:
TO-220-2
Product Description
Product Overview
The BCH65S03D4 is a 650V, 3A Silicon Carbide Schottky Diode from Bestirpower, engineered with advanced SiC technology for excellent low forward voltage and robustness. This diode offers benchmark switching behavior with no reverse recovery, a positive temperature coefficient, and is easy to parallel. It is suitable for applications requiring high power efficiency, such as power factor correction, solar inverters, data centers, and uninterruptible power supplies. The design contributes to reduced system size, cost, and EMI, while ensuring high reliability.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: Schottky Diode
- Certifications: RoHS compliant / Halogen-free
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Part Number | BCH65S03D4 | ||
| Repetitive Peak Reverse Voltage (VRRM) | 650 | V | |
| Forward Current (IF) @ TC=154 | 3 | A | |
| Total Capacitive Charge (QC) | 7.4 | nC | |
| Thermal Resistance, Junction to Case (RJC) | 3.06 | /W | Typ. |
| Forward Voltage (VF) @ IF=3A, TJ=25 | - | 1.51 - 1.7 | V |
| Reverse Current (IR) @ VR=650V, TJ=25 | - | 0.5 - 10 | A |
| Total Capacitance (C) @ VR=0V, f=1MHz | - | 118 | pF |
| Package | TO220-2 | ||
| Packing Method | Tube | 50 units |
2509021810_Bestirpower-BCH65S03D4_C51346554.pdf
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