Silicon N Channel MOSFET ANHI AUP056N08BGL designed for Single Ended Flyback and Two Transistor Forward Circuits
Key Attributes
Model Number:
AUP056N08BGL
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
65A
RDS(on):
5.6mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
107.1pF
Number:
1 N-channel
Output Capacitance(Coss):
1.215nF
Input Capacitance(Ciss):
4.553nF
Pd - Power Dissipation:
158W
Gate Charge(Qg):
63.7nC@10V
Mfr. Part #:
AUP056N08BGL
Package:
TO-220
Product Description
Product Overview
The AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, and AUB056N08BGL are N-Channel Silicon MOSFETs designed for applications in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. They are particularly suited for single-ended flyback or two-transistor forward topologies. These MOSFETs feature low drain-source on-resistance, easy gate control, and operate in enhancement mode with a typical threshold voltage (Vth) of 1.2 to 2.5 V. Key performance parameters include a drain-source voltage (VDS) of 85 V, a maximum on-resistance (RDS(on),max) of 5.6 m, a typical gate charge (Qg,typ) of 63.7 nC, and a pulse drain current (ID,pulse) of 250 A.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| AUP056N08BGL | TO220 | AUP056N08BGL | 85 | 5.6 | 63.7 | 250 |
| AUD056N08BGL | TO252 | AUD056N08BGL | 85 | 5.6 | 63.7 | 250 |
| AUN050N08BGL | DFN5X6 | AUN050N08BGL | 85 | 5.0 | 63.7 | 250 |
| AUA056N08BGL | TO220F | AUA056N08BGL | 85 | 5.6 | 63.7 | 250 |
| AUB056N08BGL | TO263 | AUB056N08BGL | 85 | 5.6 | 63.7 | 250 |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 65 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 250 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 319 | mJ | Tc=25,VDD=50V,Id=35.7A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 35.7 | A | Tc=25,VDD=50V,L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Power dissipation (TO220) | Ptot | - | - | 158 | W | TC=25C |
| Power dissipation (TO252&TO263) | Ptot | - | - | 135 | W | TC=25C |
| Power dissipation (DFN5X6) | Ptot | - | - | 151 | W | TC=25C |
| Power dissipation (TO220F) | Ptot | - | - | 30 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
| Transconductance | GFS | - | 58 | - | S | VDS=5V IDS=20A |
| Drain-source breakdown voltage | V(BR)DSS | 85 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1.2 | 2.1 | 2.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=85V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (TO220&TO220F) | RDS(on) | - | 4.9 | 5.6 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO252&TO263) | RDS(on) | - | 4.8 | 5.6 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (DFN5X6) | RDS(on) | - | 4.3 | 5.0 | m | VGS=10V,ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 1.5 | - | f=1MHz, open drain | |
| Input capacitance | Ciss | - | 4553 | - | pF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | - | 1215 | - | pF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 107.1 | - | pF | VGS=0V, VDS=25V, f=1MHz |
| Turn-on delay time | td(on) | - | 22.2 | - | ns | VDD=40V,VGS=10V,ID=2A, RG=3 |
| Rise time | tr | - | 16.6 | - | ns | VDD=40V,VGS=10V,ID=2A, RG=3 |
| Turn-off delay time | td(off) | - | 44.2 | - | ns | VDD=40V,VGS=10V,ID=2A, RG=3 |
| Fall time | tf | - | 46.6 | - | ns | VDD=40V,VGS=10V,ID=2A, RG=3 |
| Gate to source charge | Qgs | - | 14.8 | - | nC | VDD=40V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 12 | - | nC | VDD=40V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | - | 63.7 | - | nC | VDD=40V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | - | 0.7 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 38.53 | - | ns | VR=40V, IF=20A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 30.49 | - | nC | VR=40V, IF=20A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 1.38 | - | A | VR=40V, IF=20A, diF/dt=100A/s |
| Package Type | Parameter | RthJC (C/W) | RthJA (C/W) |
|---|---|---|---|
| TO220 | Thermal resistance, junction - case | 0.79 | - |
| TO220 | Thermal resistance, junction - ambient | - | 66 |
| TO252&TO263 | Thermal resistance, junction - case | 0.93 | - |
| TO252&TO263 | Thermal resistance, junction - ambient | - | 47 |
| TO220F | Thermal resistance, junction - case | 4.2 | - |
| TO220F | Thermal resistance, junction - ambient | - | 60 |
| DFN5X6 | Thermal resistance, junction - case | 0.83 | - |
| DFN5X6 | Thermal resistance, junction - ambient | - | 50 |
2410121530_ANHI-AUP056N08BGL_C18722993.pdf
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