ASA60R280E Silicon N Channel MOSFET ideal for power supply topologies two transistor forward and LLC
Key Attributes
Model Number:
ASA60R280E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
280mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.11pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.02nF@50V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
22.94nC
Mfr. Part #:
ASA60R280E
Package:
TO-220F
Product Description
ASA60R280E, ASD60R280E MOSFET Silicon N-Channel
Product Overview
The ASA60R280E and ASD60R280E are Silicon N-Channel MOSFETs designed for efficient switching applications. They feature low drain-source on-resistance (RDS(on)) for reduced power loss and easy gate control. These enhancement-mode devices are suitable for various power supply topologies, including Boost PFC, single-ended flyback, HB or AHB or LLC topologies, and two-transistor forward configurations. Ideal applications include PC power supplies, PD adaptors, LCD & PDP TVs, LED Lighting, Server power, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Package | Key Performance Parameter | Value | Unit |
|---|---|---|---|---|
| ASA60R280E | TO220F | VDS @ Tj,max | 650 | V |
| ASD60R280E | TO252 | RDS(on),max | 280 | m |
| Qg,typ | 22.94 | nC | ||
| ID,pulse | 45 | A |
| Parameter | Symbol | Unit | Min. | Typ. | Max. | Note / Test Condition |
|---|---|---|---|---|---|---|
| Maximum ratings at Tj = 25C, unless otherwise specified | ||||||
| Continuous drain current | ID | A | - | - | 15 | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | A | - | - | 45 | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | mJ | - | - | 405 | |
| MOSFET dv/dt ruggedness | dv/dt | V/ns | - | - | 137 | VDS=0...150V |
| Gate source voltage (static) | VGS | V | -20 | - | 20 | static |
| Gate source voltage (dynamic) | VGS | V | -30 | - | 30 | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | W | - | - | 32 | TC=25C |
| Power dissipation (TO252) | Ptot | W | - | - | 118 | TC=25C |
| Storage temperature | Tstg | C | -55 | - | 150 | |
| Operating junction temperature | Tj | C | -55 | - | 150 | |
| Reverse diode dv/dt | dv/dt | V/ S | - | - | 15 | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal characteristics (TO220 FullPAK) | ||||||
| Thermal resistance, junction - case | RthJC | C/W | - | - | 3.9 | |
| Thermal resistance, junction - ambient | RthJA | C/W | - | - | 80 | device on PCB, minimal footprint |
| Thermal characteristics (TO252) | ||||||
| Thermal resistance, junction - case | RthJC | C/W | - | - | 1.06 | |
| Thermal resistance, junction - ambient | RthJA | C/W | - | - | 62 | device on PCB, minimal footprint |
| Static characteristics at Tj=25C, unless otherwise specified | ||||||
| Drain-source breakdown voltage | V(BR)DSS | V | 605 | - | - | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | V | 2.8 | - | 4.2 | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | nA | - | - | 100 | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | nA | - | - | 100 | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 0.257 | 0.28 | VGS=10V, ID=7.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - | 5.3 | - | f=1MHz, open drain | |
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | pF | - | 1020 | - | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | pF | - | 108 | - | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | pF | - | 5.11 | - | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | ns | - | 8.4 | - | VDD=400V, ID=3.8A,RG=10 |
| Rise time | tr | ns | - | 21.2 | - | VDD=400V, ID=3.8A,RG=10 |
| Turn-off delay time | td(off) | ns | - | 32.4 | - | VDD=400V, ID=3.8A,RG=10 |
| Fall time | tf | ns | - | 20.8 | - | VDD=400V, ID=3.8A,RG=10 |
| Gate charge characteristics | ||||||
| Gate to source charge | Qgs | nC | - | 5.7 | - | VDD=400V, ID=3.8A, VGS=10V |
| Gate to drain charge | Qgd | nC | - | 17.2 | - | VDD=400V, ID=3.8A, VGS=10V |
| Gate charge total | Qg | nC | - | 22.94 | - | VDD=400V, ID=3.8A, VGS=10V |
| Gate plateau voltage | Vplateau | V | - | 5.4 | - | VDD=400V, ID=3.8A, VGS=10V |
| Reverse diode characteristics | ||||||
| Diode forward voltage | VSD | V | - | 0.736 | - | VGS=0V, IF=1 A, Tj=25C |
| Reverse recovery time | trr | ns | - | 216 | - | VR=400V, IF=2A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | uC | - | 1.3 | - | VR=400V, IF=2A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | A | - | 16.7 | - | VR=400V, IF=2A, diF/dt=100A/s |
Package Outlines
Figure 1: Outline PG-TO220F
Figure 2: Outline PG-TO252
Revision History
| Revision | Date | Subjects (major changes since last revision) |
|---|---|---|
| 1.0 | 2020-3-12 | Release version |
2410121550_ANHI-ASA60R280E_C5439999.pdf
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