Power Management Bestirpower BMB65N100UC1 Super Junction Power MOSFET for Server and Solar Inverter
Key Attributes
Model Number:
BMB65N100UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
35A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
278W
Input Capacitance(Ciss):
2.99nF@50V
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
BMB65N100UC1
Package:
D2PAK
Product Description
Product Overview
The BMB65N100UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantage of Low EMI and reduced switching losses. Its ultra-fast body diode and extremely low losses (FOM Rdson*Qg and Eoss) contribute to very high commutation ruggedness.
Applications:
- AC/DC power supply
- PC power
- Telecom/Server
- Solar inverter
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Package Type: TO-263 (DPAK)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Key Features | ||||||
| BVDSS@TJ,max | Drain to Source Voltage | 700 | V | |||
| ID | Drain Current | VGS = 10 V, (TC = 25) | 35 | A | ||
| RDS(on),max | Static Drain to Source On Resistance | VGS = 10 V, ID =18A TJ=25 | 82 | 100 | m | |
| Qg,typ | Total Gate Charge | VDD = 400 V, ID = 18A, VGS =0 to 10 V | 66 | nC | ||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage(1) | 650 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current | VGS = 10 V, (TC = 25) | 35 | A | ||
| ID | Drain Current | VGS = 10 V, (TC = 100) | 22 | A | ||
| IDM | Drain Current Pulsed | 105 | A | |||
| EAS | Single Pulsed Avalanche Energy(3) | 750 | mJ | |||
| dv/dt | MOSFET dv/dt ruggedness | 50 | V/ns | |||
| dv/dt | Peak Diode Recovery dv/dt | 50 | ||||
| PD | Power Dissipation (TC = 25) | 278 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| Is | Continuous diode forward current | 35 | A | |||
| Is | Pulse Diode pulse current(2) | 105 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.45 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | |||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | ||||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS = 0 V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS , ID = 250 uA | 3.0 | 5.0 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID =18A TJ=25 | 82 | 100 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | 2990 | pF | |||
| Coss | Output Capacitance | 141 | pF | |||
| Co(tr) | Time Related Output Capacitance2 | VDS = 0 to 400 V, VGS = 0 V | 452 | pF | ||
| Co(er) | Energy Related Output Capacitance1 | 88 | pF | |||
| Crss | Reverse transfer capacitance | VGS=0V, VDS=50V, f=250KHz | 5.8 | pF | ||
| Qg(tot) | Total Gate Charge at 10 V | VDD = 400 V, ID = 18A, VGS =0 to 10 V | 66 | nC | ||
| Qgs | Gate to Source Charge | 20 | nC | |||
| Qgd | Gate to Drain Miller Charge | 25 | nC | |||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 18A, VGS = 10 V, | 21 | ns | ||
| tr | Turn-On Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 76 | ns | |||
| tf | Turn-Off Fall Time | 8 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V,IF=18A TJ=25 | 0.88 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF= 18 A, diF/dt = 100 A / s | 140 | ns | ||
| Qrr | Reverse Recovery Charge | 1.15 | C | |||
| Imm | Peak reverse recovery current | 15 | A | |||
Part Number: BMB65N100UC1
Ordering Information:
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMB65N100UC1 | BMB65N100UC1 | TO-263(D2PAK) | Tape & Reel | 800 units |
2508071805_Bestirpower-BMB65N100UC1_C50153974.pdf
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