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quality Power MOSFET ASA50R130E Featuring 130 Milliohm On Resistance and 70 Amp Pulsed Current Capability factory
quality Power MOSFET ASA50R130E Featuring 130 Milliohm On Resistance and 70 Amp Pulsed Current Capability factory

Power MOSFET ASA50R130E Featuring 130 Milliohm On Resistance and 70 Amp Pulsed Current Capability

Key Attributes
Model Number: ASA50R130E
Product Custom Attributes
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
29A
RDS(on):
113mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
1.31pF@100V
Number:
1 N-channel
Pd - Power Dissipation:
76W
Input Capacitance(Ciss):
1.446nF@100V
Gate Charge(Qg):
32.6nC
Mfr. Part #:
ASA50R130E
Package:
TO-220F
Product Description

Product Overview

The ASA50R130E is a Silicon N-Channel MOS enhancement mode MOSFET designed for efficient power conversion. It features a low drain-source on-resistance of 0.113 (typ.) and is easy to control, making it suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Type: N-Channel MOS
  • Mode: Enhancement mode

Technical Specifications

Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
ASA50R130E TO220F ASA50R130E 550 130 32.6 70
Parameter Symbol Value (Min.) Value (Typ.) Value (Max.) Unit Note / Test Condition
Continuous drain current ID - - 29 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse - - 70 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - - 414 mJ Tc=25,VDD=50V,ID=9.1A, L = 10mH, RG=25
Avalanche current, single pulse IAR - - 9.1 A Tc=25,VDD=50V,L=10mH, RG=25
Gate source voltage (static) VGS -30 - 30 V static
Power dissipation Ptot - - 76 W TC=25C
Storage temperature Tstg -55 - 150 C -
Operating junction temperature Tj -55 - 150 C -
MOSFET dv/dt ruggedness dv/dt - - 12.3 V/ns Vds=0-400v
Reverse diode dv/dt dv/dt - - 199 V/ns Vds=0-400vIF=7.7A
Thermal resistance, junction - case RthJC - - 3.62 C/W -
Thermal resistance, junction - ambient RthJA - - 78 C/W device on PCB, minimal footprint
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.5 - 3.5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - - 1 uA VDS=500V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) - 0.113 0.130 VGS=10V, ID=10A, Tj=25C
Gate resistance (Intrinsic) RG - 24.2 - f=1MHz, open drain
Input capacitance Ciss - 1446 - pF VGS=0V, VDS=100V, f=1MHz
Output capacitance Coss - 79 - pF VGS=0V, VDS=100V, f=1MHz
Reverse transfer capacitance Crss - 1.31 - pF VGS=0V, VDS=100V, f=1MHz
Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4
Rise time tr - 13 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4
Turn-off delay time td(off) - 144 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4
Fall time tf - 25 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4
Gate to source charge Qgs - 6.5 - nC VDD=400V, ID=7.7A, VGS=0 to 10V
Gate to drain charge Qgd - 11.4 - nC VDD=400V, ID=7.7A, VGS=0 to 10V
Gate charge total Qg - 32.9 - nC VDD=400V, ID=7.7A, VGS=0 to 10V
Diode forward voltage VSD - 0.7 - V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr - 205 - ns VR=400V, IF=7.7A, diF/dt=100A/s
Reverse recovery charge Qrr - 2.0 - uC VR=400V, IF=7.7A, diF/dt=100A/s
Peak reverse recovery current Irrm - 20.3 - A VR=400V, IF=7.7A, diF/dt=100A/s

2410121525_ANHI-ASA50R130E_C7494992.pdf

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