1200V N Channel Power MOSFET Bestirpower BCL120N160W1 for Solar Inverter and Battery Charger Designs
Key Attributes
Model Number:
BCL120N160W1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+175℃
RDS(on):
160mΩ
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Pd - Power Dissipation:
126W
Output Capacitance(Coss):
28pF
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
40nC
Mfr. Part #:
BCL120N160W1
Package:
DFN-8(8x8)
Product Description
BCL120N160W1: 1200V 160m Silicon Carbide Power MOSFET
The BCL120N160W1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a high blocking voltage of 1200V combined with a low on-resistance of 160m, enabling higher system efficiency and reduced cooling requirements. Its high-speed switching capabilities with low capacitances, coupled with ease of paralleling and simple drive characteristics, make it suitable for a wide range of power electronics solutions. The device also features avalanche ruggedness and is Halogen Free and RoHS Compliant.
Applications
- Solar Inverters
- Switch Mode Power Supplies
- High Voltage DC/DC Converters
- Battery Chargers
- Motor Drives
- Pulsed Power applications
Benefits
- Higher System Efficiency
- Reduced Cooling Requirements
- Increased Power Density
- Increased System Switching Frequency
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Type: N-Channel Power MOSFET
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSmax | Drain - Source Voltage | VGS=0V,ID=100A | 1200 | V | ||
| VGSmax | Gate - Source Voltage | Absolute maximum values | -8 / +22 | V | ||
| VGSop | Gate - Source Voltage | Recommended operational values | -5 / +18 | V | ||
| ID | Continuous Drain Current | VGS=18V, TC=25C | 22 | A | ||
| ID | Continuous Drain Current | VGS=18V, TC=100C | 16 | A | ||
| IDM | Pulse Drain Current | Pulse width limited by Tjmax | 58 | A | ||
| TJ, TSTG | Operating Junction and Storage Temperature | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.19 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 27.47 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| PD | Power Dissipation (TC = 25) | 126 | W | |||
| Derate Above 25 | 0.84 | W/ | ||||
| Electrical Characteristics (TJ = 25, Note1) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID=100 A | 1200 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID=5.0 mA, TC=25C | 2.0 | 3.4 | 4.0 | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID=5.0 mA, TC=150C | 2.7 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 10 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = 18 V, VDS = 0 V | 10 | 200 | nA | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 10 A,TC = 25C | 130 | 180 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 10 A,TC = 25C | 160 | 190 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 10 A,TC = 150C | 230 | m | ||
| gfs | Transconductance | VGS = 18 V, ID = 10 A,TJ = 25C | 6.2 | S | ||
| gfs | Transconductance | VGS = 18 V, ID = 10 A,TJ = 150C | 3.7 | S | ||
| Reverse Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 5 A,TJ = 25C | 3.7 | V | ||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 5 A,TJ = 150C | 3.2 | V | ||
| IS | Continuous Diode Forward Current | TC = 25 | 30 | A | ||
| trr | Reverse Recovery time | VGS = -5V, ISD = 10 A, VR= 800V, dif / dt=1200A/s | 10 | ns | ||
| Qrr | Reverse Recovery Charge | 40 | nC | |||
| Irrm | Peak Reverse Recovery Current | 3 | A | |||
| EON | Turn-On Switching Energy | VDS=800V, VGS= -5/18V,ID=10A, RG(ext) = 0, L= 256H | 200 | J | ||
| EOFF | Turn-Off Switching Energy | VDS=800V, VGS= -5/18V,ID= 10A, RG(ext) = 0, L= 256H | 50 | J | ||
| td(on) | Turn-On Delay Time | VDS=800V, VGS= -5/18V,ID= 100A, RG(ext) = 0, Timing relative to VDS | 20 | ns | ||
| tr | Rise Time | 45 | ns | |||
| td(off) | Turn-Off Delay Time | 20 | ns | |||
| tf | Fall Time | 15 | ns | |||
| RG(int) | Internal Gate Resistance | f= 1 MHz, VAC=25mV | 10.0 | |||
| Ciss | Input Capacitance | VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV | 818 | pF | ||
| Coss | Output Capacitance | 41 | pF | |||
| Crss | Reverse Transfer Capacitance | 8 | pF | |||
| Qgs | Gate to Source Charge | VDD=800V, VGS= -5/18V,ID=10A | 9.6 | nC | ||
| Qgd | Gate to Drain Charge | 19 | nC | |||
| Qg | Total Gate Charge | 40 | nC | |||
Package Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCL120N160W1 | BCL120N160W1 | DFN8*8 | Tape & Reel | 5000 units |
2507161830_Bestirpower-BCL120N160W1_C46472755.pdf
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