650V 11A Super Junction Power MOSFET Bestirpower BMF65N380E2 with Low On Resistance and Gate Charge
Key Attributes
Model Number:
BMF65N380E2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
380mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
801pF
Pd - Power Dissipation:
30W
Output Capacitance(Coss):
28pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
BMF65N380E2
Package:
TO-220F
Product Description
BMF65N380E2 Super Junction Power MOSFET
Product Overview
The BMF65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. Optimized charge coupling technology enables high efficiency, while user-friendly design provides Low EMI and low switching loss. This MOSFET is ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), and chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Drain to Source Voltage (BVDSS @ TJ,max) | 700 | V | |
| Drain Current (ID) | 11 | A | (continuous) VGS=10V, TC = 25 |
| On-Resistance (RDS(on),max) | 380 | m | |
| Total Gate Charge (Qg,typ) | 19 | nC | |
| Drain to Source Voltage (VDSS) | 650 | V | |
| Gate to Source Voltage (VGSS) | 30 | V | |
| Drain Current (continuous) (ID) | 11 | A | VGS=10V, TC = 25 |
| Drain Current (continuous) (ID) | 7.4 | A | VGS=10V, TC = 100 |
| Drain Current Pulsed (IDM) | 33 | A | (Note1) |
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | (Note2) |
| Avalanche Current (IAS) | 7 | A | (Note2) |
| MOSFET dv/dt | 50 | V/ns | |
| Peak Diode Recovery dv/dt | 15 | V/ns | (Note3) |
| Power Dissipation (PD) | 30 | W | (TC = 25) |
| Power Dissipation Derating | 0.24 | W/ | Above 25 |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | ||
| Thermal Resistance, Junction to Case (RJC) | 4.1 | /W | Max. |
| Thermal Resistance, Junction to Ambient (RJA) | 62 | /W | Max. |
| Soldering temperature (Tsold) | 260 | wave soldering only allowed at leads | |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V | VGS = 0 V, ID = 250 uA |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 650 V, VGS = 0 V |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS = 30 V, VDS = 0 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VGS = VDS, ID = 250 uA |
| Static Drain to Source On Resistance (RDS(on)) | 325 - 380 | m | VGS = 10 V, ID = 4.8 ATJ = 25 |
| Static Drain to Source On Resistance (RDS(on)) | 813 - 950 | m | VGS = 10 V, ID = 4.8 ATJ = 150 |
| Input Capacitance (Ciss) | 801 | pF | VDS = 400 V, VGS = 0 V, f = 250 kHz |
| Output Capacitance (Coss) | 28 | pF | |
| Reverse transfer capacitance (Crss) | 3.8 | pF | |
| Total Gate Charge (Qg(tot)) | 19 | nC | at 10 V, VDS = 400 VID=5.5 A, VGS = 10 V |
| Gate to Source Charge (Qgs) | 2.9 | nC | |
| Gate to Drain Miller Charge (Qgd) | 9.7 | nC | |
| Gate Resistance (RG) | 5.6 | f = 1 MHzOpen Drain | |
| Turn-On Delay Time (td(on)) | 16 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 |
| Turn-On Rise Time (tr) | 6 | ns | |
| Turn-Off Delay Time (td(off)) | 29 | ns | |
| Turn-Off Fall Time (tf) | 22 | ns | |
| Maximum Continuous Diode Forward Current (IS) | 11 | A | |
| Maximum Pulsed Diode Forward Current (ISM) | 33 | A | |
| Diode Forward Voltage (VSD) | 0.9 - 1.2 | V | VGS = 0 V, ISD = 11 A |
| Reverse Recovery Time (trr) | 198 | ns | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s |
| Reverse Recovery Charge (Qrr) | 1.93 | C |
Package Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMF65N380E2 | BMF65N380E2 | TO220F | Tube | 50 units |
2506162235_Bestirpower-BMF65N380E2_C49164822.pdf
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