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quality High speed power switching ANHI AUB045N10BT Silicon N Channel MOSFET for switched mode power supplies factory
quality High speed power switching ANHI AUB045N10BT Silicon N Channel MOSFET for switched mode power supplies factory

High speed power switching ANHI AUB045N10BT Silicon N Channel MOSFET for switched mode power supplies

Key Attributes
Model Number: AUB045N10BT
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
176A
RDS(on):
4.5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22.4pF
Number:
1 N-channel
Output Capacitance(Coss):
485.1pF
Pd - Power Dissipation:
229W
Input Capacitance(Ciss):
5.763nF
Gate Charge(Qg):
97.3nC@10V
Mfr. Part #:
AUB045N10BT
Package:
TO-263
Product Description

Product Overview

AUB045N10BT is a Silicon N-Channel MOSFET designed for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC circuits within telecommunications and industrial applications. It features low drain-source on-resistance (RDS(on) = 4.1m typ.), high-speed power switching, enhanced body diode dv/dt capability, and improved avalanche ruggedness.

Product Attributes

  • Brand: AUB
  • Product Name: AUB045N10BT
  • Technology: Silicon N-Channel MOS
  • Package: TO263

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.5 - 4.5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1 uA VDS=100V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - +/-100 nA VGS=+/-20V, VDS=0V
Drain-source on-state resistance RDS(on) 4.1 - 4.5 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG - 1.6 f=1MHz, open drain
Transconductance Gfs 93.2 S VDS=5V, ID=50A
Input capacitance Ciss - 5763 PF VGS=0V, VDS=50V, f=1MHz
Output capacitance Coss - 485.1 PF VGS=0V, VDS=50V, f=1MHz
Reverse transfer capacitance Crss - 22.4 PF VGS=0V, VDS=50V, f=1MHz
Turn-on delay time td(on) - 16.6 ns VDD=50V,VGS=10V,ID=50A, RG=3
Rise time tr - 74 ns VDD=50V,VGS=10V,ID=50A, RG=3
Turn-off delay time td(off) - 51 ns VDD=50V,VGS=10V,ID=50A, RG=3
Fall time tf - 53 ns VDD=50V,VGS=10V,ID=50A, RG=3
Gate to source charge Qgs - 20.9 nC VDD=50V, ID=20A, VGS=10V
Gate to drain charge Qgd - 29.1 nC VDD=50V, ID=20A, VGS=10V
Gate charge total Qg - 97.3 nC VDD=50V, ID=20A, VGS=10V
Continuous Source Current at silicon ISD - 176 A Limited by Tj,max.
Diode forward voltage VSD - 1.2 V VGS=0V, Is=1A, Tj=25C
Reverse recovery time trr - 79 ns Vgs=0V, IF=50A, diF/dt=100A/s
Reverse recovery charge Qrr - 141 nC Vgs=0V, IF=50A, diF/dt=100A/s
Peak Reverse Recovery Current Irrm - 3.01 A Vgs=0V, IF=50A, diF/dt=100A/s
Continuous drain current at silicon ID - 176 A TC=25C, Limited by Tj,max.
Continuous drain current at package ID - 123 A TC=25C
Continuous drain current at silicon ID 112 A TC=100C
Pulsed drain current ID,pulse - 486 A TC=25C
Avalanche energy, single pulse EAS - 441 mJ Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25
Avalanche current, single pulse IAR - 42 A Tc=25, VDD=50V, L=0.5mH, RG=25
Gate source voltage (static) VGS -20 - 20 V static
Power dissipation Ptot - 229 W TC=25C
Storage temperature Tstg -55 - 150 C
Operating junction temperature Tj -55 - 150 C
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Thermal resistance, junction - case RthJC - 0.54 C/W
Thermal resistance, junction - ambient RthJA - 62 C/W device on PCB, minimal footprint

2410121615_ANHI-AUB045N10BT_C18722988.pdf
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