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quality 1200V Power MOSFET ANHI ADQ120N040G2 Silicon Carbide Device for Inverter and Converter Circuits factory
quality 1200V Power MOSFET ANHI ADQ120N040G2 Silicon Carbide Device for Inverter and Converter Circuits factory

1200V Power MOSFET ANHI ADQ120N040G2 Silicon Carbide Device for Inverter and Converter Circuits

Key Attributes
Model Number: ADQ120N040G2
Product Custom Attributes
Mfr. Part #:
ADQ120N040G2
Package:
TO-247-4L
Product Description

Product Overview

The ADQ120N040G2 is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It features a low drain-source on-resistance of 40m (typ.) and is easy to control with a gate switching enhancement mode. This MOSFET is suitable for use in asymmetrical bridge converters, inverters, and single-switch forward and flyback topologies.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Carbide
  • Color: Not specified

Technical Specifications

Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
ADQ120N040G2 TO-247-4L ADQ120N040G2 1200 45 103 182
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID 68 A TC=25C
Continuous drain current ID 50 A TC=100C
Avalanche energy, single pulse EAS 840 mJ Tc=25,VDD=50V,L=1mH, RG=25
Gate source voltage (static) VGS -5 to 20 V static
Power dissipation Ptot 247 W TC=25C
Derating factor above 25C - 2.1 W/C -
Storage temperature Tstg -55 to 175 C -
Operating junction temperature Tj -55 to 175 C -
Soldering Temperature TL 300 C Distance of 1.6mm from case for 10s
Transconductance GFS 6.3 S VDS=20V IDS=20A
Thermal resistance, junction - case RthJC 0.62 C/W -
Thermal resistance, junction - ambient RthJA 40 C/W device on PCB, minimal footprint
Drain-source breakdown voltage V(BR)DSS 1200 V VGS=0V, ID=1mA
Gate threshold voltage V(GS)th 2.0 to 4.0 V VDS=VGS, ID=10mA
Zero gate voltage drain current IDSS 1 uA VDS=1200V, VGS=0V
Gate-source leakage current IGSS+ 100 nA VGS=20V, VDS=0V
Gate-source leakage current IGSS- -100 nA VGS=-5V, VDS=0V
Drain-source on-state resistance RDS(on) 40 m VGS=20V, ID=20A, Tj=25C
Drain-source on-state resistance RDS(on) 46 m VGS=20V, ID=20A, Tj=150C
Gate resistance (Intrinsic) RG 2.1 f=1MHz, open drain
Input capacitance Ciss 2479 pF VGS=0V, VDS=1000V, f=200KHz
Output capacitance Coss 112 pF VGS=0V, VDS=1000V, f=200KHz
Reverse transfer capacitance Crss 7 pF VGS=0V, VDS=1000V, f=200KHz
Turn-on delay time td(on) 16 ns VDD=800V, VGS=20V, ID=20A,RG=0; TJ =25
Rise time tr 9 ns -
Turn-off delay time td(off) 25 ns -
Fall time tf 15 ns -
Turn-on Switching Energy Eon 1496 uJ -
Turn-off Switching Energy Eoff 92 uJ -
Gate to source charge Qgs 35 nC VDD=800V, ID=20A, VGS=20V
Gate to drain charge Qgd 32 nC VDD=800V, ID=20A, VGS=20V
Gate charge total Qg 103 nC VDD=800V, ID=20A, VGS=20V
Continuous Source Current ISD 68 A -
Diode forward voltage VSD 3.0 V IS = 10A, VGS = 0V, Tj=25C
Reverse recovery time trr 91 ns VDD =800VID =20A, +VGS =+15V,-VGS =-4V LLoad=500uHRg=0TJ =25
Reverse recovery charge Qrr 312 nC -
Peak reverse recovery current Irrm 10.8 A -

2410121525_ANHI-ADQ120N040G2_C5440044.pdf

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