Power Management Device ANPEC APM4826KC TRG N Channel MOSFET with Low On Resistance and SOP 8 Package

Key Attributes
Model Number: APM4826KC-TRG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
1 N-channel
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
1.4nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
APM4826KC-TRG
Package:
SOP-8
Product Description

Product Overview

The APM4826K is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features a Super High Dense Cell Design, offering high performance with low on-resistance. This MOSFET is avalanche rated and known for its reliability and ruggedness, making it suitable for DC-DC converters in networking systems and power management in notebook computers. It is available in lead-free and green (RoHS compliant) versions.

Product Attributes

  • Brand: ANPEC
  • Product Line: APM4826K
  • Technology: N-Channel Enhancement Mode MOSFET
  • Certifications: RoHS Compliant, Lead Free, Green Devices Available
  • Package Type: SOP-8
  • Origin: Taiwan (implied by company address)

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage 20 V
ID a Continuous Drain Current (VGS=10V) TA=25C 12 A
TA=70C 9.5
IDM a 300s Pulsed Drain Current (VGS=10V) 40 A
IS a Diode Continuous Forward Current 3 A
IAR b Avalanche Current 22.5 A
EAR b Repetitive Avalanche Energy (L=0.3mH) 75 mJ
TJ Maximum Junction Temperature 150 C
TSTG Storage Temperature Range -55 150 C
PD a Maximum Power Dissipation TA=25C 2.5 W
TA=70C 1.6
RJA a,c Thermal Resistance-Junction to Ambient t 10s 50 C/W
Steady State 75
RJL Thermal Resistance-Junction to Lead Steady State 25 C/W
Electrical Characteristics (TA = 25C Unless Otherwise Noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 A
TJ=85C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=20V, VDS=0V - - 100 nA
RDS(ON) e Drain-Source On-state Resistance VGS=10V, IDS=12A - 9.5 12 m
VGS=4.5V, IDS=9A - 13.5 18
VSD e Diode Forward Voltage ISD=3A, VGS=0V - 0.75 1.3 V
trr Reverse Recovery Time ISD=3A, VGS=0V - 18 - ns
Qrr Reverse Recovery Charge ISD=12A, dlSD/dt=100A/s - 11 - nC
Dynamic Characteristics (TA = 25C Unless Otherwise Noted)
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1 1.7 3
Capacitance Ciss VGS=0V, VDS=15V, Frequency=1.0MHz - 1150 1400 pF
Coss VGS=0V, VDS=15V, Frequency=1.0MHz - 170 -
Crss VGS=0V, VDS=15V, Frequency=1.0MHz - 135 -
Switching Characteristics td(ON) VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 - 10 19 ns
tr - 12 23
td(OFF) - 30 55
tf - 7 14
Gate Charge Characteristics
Gate Charge Qg VDS=15V, VGS=10V, IDS=12A - 25.3 35 nC
Qgs - 3.5 -
Qgd - 6.5 -
Ordering and Marking Information
Package Code K : SOP-8
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
Device Marking APM4826K XXXXX (Date Code)
Temperature Range C : -55 to 150 C
Package Information (SOP-8)
Symbol MIN. MAX. INCHES MIN. INCHES MAX.
A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0 0.10 0 0.004
L 0.40 0.016
Tape & Reel Dimensions
Package Type Unit Quantity
SOP-8 2500

2411220218_ANPEC-APM4826KC-TRG_C368569.pdf

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