Power Management Device ANPEC APM4826KC TRG N Channel MOSFET with Low On Resistance and SOP 8 Package
Product Overview
The APM4826K is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features a Super High Dense Cell Design, offering high performance with low on-resistance. This MOSFET is avalanche rated and known for its reliability and ruggedness, making it suitable for DC-DC converters in networking systems and power management in notebook computers. It is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: ANPEC
- Product Line: APM4826K
- Technology: N-Channel Enhancement Mode MOSFET
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Package Type: SOP-8
- Origin: Taiwan (implied by company address)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) | ||||||
| VDSS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID a | Continuous Drain Current (VGS=10V) | TA=25C | 12 | A | ||
| TA=70C | 9.5 | |||||
| IDM a | 300s Pulsed Drain Current (VGS=10V) | 40 | A | |||
| IS a | Diode Continuous Forward Current | 3 | A | |||
| IAR b | Avalanche Current | 22.5 | A | |||
| EAR b | Repetitive Avalanche Energy (L=0.3mH) | 75 | mJ | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| PD a | Maximum Power Dissipation | TA=25C | 2.5 | W | ||
| TA=70C | 1.6 | |||||
| RJA a,c | Thermal Resistance-Junction to Ambient | t 10s | 50 | C/W | ||
| Steady State | 75 | |||||
| RJL | Thermal Resistance-Junction to Lead | Steady State | 25 | C/W | ||
| Electrical Characteristics (TA = 25C Unless Otherwise Noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V, VGS=0V | - | - | 1 | A |
| TJ=85C | - | - | 30 | |||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 1.3 | 1.8 | 2.5 | V |
| IGSS | Gate Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| RDS(ON) e | Drain-Source On-state Resistance | VGS=10V, IDS=12A | - | 9.5 | 12 | m |
| VGS=4.5V, IDS=9A | - | 13.5 | 18 | |||
| VSD e | Diode Forward Voltage | ISD=3A, VGS=0V | - | 0.75 | 1.3 | V |
| trr | Reverse Recovery Time | ISD=3A, VGS=0V | - | 18 | - | ns |
| Qrr | Reverse Recovery Charge | ISD=12A, dlSD/dt=100A/s | - | 11 | - | nC |
| Dynamic Characteristics (TA = 25C Unless Otherwise Noted) | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1 | 1.7 | 3 | |
| Capacitance | Ciss | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 1150 | 1400 | pF |
| Coss | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 170 | - | ||
| Crss | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 135 | - | ||
| Switching Characteristics | td(ON) | VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 | - | 10 | 19 | ns |
| tr | - | 12 | 23 | |||
| td(OFF) | - | 30 | 55 | |||
| tf | - | 7 | 14 | |||
| Gate Charge Characteristics | ||||||
| Gate Charge | Qg | VDS=15V, VGS=10V, IDS=12A | - | 25.3 | 35 | nC |
| Qgs | - | 3.5 | - | |||
| Qgd | - | 6.5 | - | |||
| Ordering and Marking Information | ||||||
| Package Code | K : SOP-8 | |||||
| Handling Code | TR : Tape & Reel | |||||
| Assembly Material | G : Halogen and Lead Free Device | |||||
| Device Marking | APM4826K XXXXX (Date Code) | |||||
| Temperature Range | C : -55 to 150 C | |||||
| Package Information (SOP-8) | ||||||
| Symbol | MIN. | MAX. | INCHES MIN. | INCHES MAX. | ||
| A | 1.75 | 0.069 | ||||
| A1 | 0.10 | 0.25 | 0.004 | 0.010 | ||
| A2 | 1.25 | 0.049 | ||||
| b | 0.31 | 0.51 | 0.012 | 0.020 | ||
| c | 0.17 | 0.25 | 0.007 | 0.010 | ||
| D | 4.80 | 5.00 | 0.189 | 0.197 | ||
| E | 5.80 | 6.20 | 0.228 | 0.244 | ||
| E1 | 3.80 | 4.00 | 0.150 | 0.157 | ||
| e | 1.27 BSC | 0.050 BSC | ||||
| h | 0 | 0.10 | 0 | 0.004 | ||
| L | 0.40 | 0.016 | ||||
| Tape & Reel Dimensions | ||||||
| Package Type | Unit Quantity | |||||
| SOP-8 | 2500 | |||||
2411220218_ANPEC-APM4826KC-TRG_C368569.pdf
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