Fast switching N channel Enhanced Power MOSFET BL BLP024N10 T with low reverse transfer capacitances
Key Attributes
Model Number:
BLP024N10-T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
223A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Pd - Power Dissipation:
250W
Gate Charge(Qg):
148nC@10V
Mfr. Part #:
BLP024N10-T
Package:
TOLL-8
Product Description
Product Overview
The BLP024N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench II technology. This technology significantly reduces conduction loss, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications, offering fast switching, low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS compliant.
Product Attributes
- Brand: Belling
- Technology: Advanced Double Trench II
- Certifications: RoHS compliant
Technical Specifications
| Model | Description | Key Characteristics | VDSS (V) | ID (A) | RDS(on).typ (m) |
|---|---|---|---|---|---|
| BLP024N10 | N-channel Enhanced Power MOSFET |
| 100 | 223 | 2 |
Detailed Electrical Characteristics
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| OFF Characteristics | |||||
| VDSS Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | 110 | -- | V |
| IDSS Drain-Source Leakage Current | VDS=100V, VGS=0V | -- | -- | 1 | A |
| IDSS Drain-Source Leakage Current | VDS=80V, VGS=0V @TC=125C | -- | -- | 100 | A |
| IGSS(F) Gate-Source Forward Leakage | VGS=+20V | -- | -- | 100 | nA |
| IGSS(R) Gate-Source Reverse Leakage | VGS=-20V | -- | -- | -100 | nA |
| ON Characteristics | |||||
| RDS(on) Drain-Source On-Resistance | VGS=10V, ID=50A, Pulse width tp300s, 2% | -- | 2 | 2.4 | m |
| VGS(th) Gate Threshold Voltage | VDS=VGS, ID=250A | 2 | 3 | 4 | V |
| Dynamic Characteristics | |||||
| Ciss Input Capacitance | VDS=50V, VGS=0, f=1MHz | -- | 9000 | -- | pF |
| Coss Output Capacitance | -- | 2838 | -- | pF | |
| Crss Reverse Transfer Capacitance | -- | 415 | -- | pF | |
| Qg Total Gate Charge | VDD=50V, ID=100A, VGS=10V | -- | 148 | -- | nC |
| Qgs Gate-Source charge | -- | 47 | -- | nC | |
| Qgd Gate-Drain charge | -- | 33 | -- | nC | |
| Switching Characteristics | |||||
| td(on) Turn-On Delay Time | VDD=50V, VGS=10V, RG=1.6, Resistive Load | -- | 32 | -- | ns |
| tr Rise Time | -- | 40 | -- | ns | |
| td(off) Turn-Off Delay Time | -- | 80 | -- | ns | |
| tf Fall Time | -- | 35 | -- | ns | |
| Source-Drain Diode Characteristics | |||||
| IS Continuous Source Current | -- | -- | 223 | A | |
| ISM Maximum Pulsed Current | -- | -- | 892 | A | |
| VSD Diode Forward Voltage | VGS=0V, IS=50A | -- | -- | 1.2 | V |
| Trr Reverse Recovery Time | Is=90A,VGS=0, di/dt=100A/us | -- | 80 | -- | ns |
| Qrr Reverse Recovery Charge | -- | 195 | -- | nC | |
Ordering Information
| Ordering Code | Product Code | Package | Device Marking | Packing |
|---|---|---|---|---|
| BLP024N10-T | BLP024N10 | TOLL8 | P024N10 | Reel |
| BLP024N10-BA | BLP024N10 | TO263-7 | P024N10 | Reel |
Package Description
TO263-7
| Symbol | MIN | NOM | MAX |
|---|---|---|---|
| A | 2.15 | 2.3 | 2.45 |
| A1 | 0.1REF | ||
| b | 0.6 | 0.75 | 0.9 |
| b1 | 0.4REF | ||
| C | 0.5REF | ||
| D | 10.2 | 10.5 | 10.8 |
| D1 | 2.8 | 3.2 | 3.6 |
| E | 9.7 | 9.9 | 10.1 |
| E2 | 8.5REF | ||
| E1 | 9.6 | 9.8 | 10 |
| e | 1.2REF | ||
| H | 11.5 | 11.75 | 12 |
| E3 | 7REF | ||
| E4 | 0.6REF | ||
| Q | 4.5REF | ||
| Q1 | 5.2REF | ||
| L | 1 | 1.5 | 2 |
| L3 | 0.5 | 0.7 | 0.9 |
| L2 | 0.4 | 0.6 | 0.8 |
| L1 | 1.1REF | ||
| P | 2 | 3 | 4 |
| 7 | 9 | 12 |
TOLL-8
(Dimensions for TOLL-8 package are not explicitly detailed in a table but it is listed as an available package type.)
Important Notes
- Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Always adhere to the absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
- MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
- Shanghai Belling reserves the right to make changes to this specification sheet without prior notice.
Contact Information
- Company: Shanghai Belling Co., Ltd.
- Address: No. 810 Yishan Road, Shanghai, 200233, China
- Contact: https://www.belling.com.cn/contact.html
2509181546_BL-BLP024N10-T_C46547752.pdf
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